Semiconductor device

• US 5,859,443 A
• Filed: 06/06/1995
• Issued: 01/12/1999
• Est. Priority Date: 06/30/1980
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Nagata, Yujiro
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US08/470,599
• Time in Patent Office: 1,316 Days
• Field of Search: 257/57, 257/59, 257/65, 257/66, 257/69, 257/70, 257/63
• US Class Current: 257/65
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.

Claims

1. An insulated gate field effect transistor formed on an insulating surface, having at least a channel region, a gate insulating layer in contact with said channel region and a gate electrode insulated from said channel region by said gate insulating layer, said channel region comprising a semiconductor material having crystallinity,

wherein said semiconductor material comprises silicon doped with hydrogen and a quadrivalent element, and a concentration of said quadrivalent element is not higher than 10 mol %.

2. The transistor of claim 1 wherein said semiconductor material has an intrinsic conductivity type.

3. The transistor of claim 1 wherein said semiconductor material has a conductivity type.

10. The transistor of claim 1, 4 or 7 wherein said insulating surface is a surface of a glass plate, a ceramic plate or a silicon oxide film.

11. An insulated gate field effect transistor according to claim 1 wherein said quadrivalent element is contained at a concentration from 0.1 mol % to 10 mol %.

13. An insulated gate field effect transistor according to claim 1 wherein said gate electrode comprises doped silicon.

16. An insulated gate field effect transistor according to claim 1 wherein said channel region is not doped with an N or P type conductivity impurity.

19. An insulated gate field effect transistor according to claim 1 wherein said channel region has a lattice strain.

26. An insulated gate field effect transistor according to claim 1 wherein said quadrivalent element is contained in said semiconductor material uniformly.

30. An insulated gate field effect transistor according to claim 1 wherein said quadrivalent element is selected from the group consisting of Pb and Sn.

4. An insulated gate field effect transistor formed on an insulating surface, having at least a channel region, a gate insulating layer in contact with said channel region and a gate electrode insulated from said channel region by said gate insulating layer, said channel region comprising a non-single crystalline semiconductor material comprising (a) a semiconductor selected from the group consisting of silicon, germanium and a combination thereof, (b) a recombination center neutralizer containing hydrogen, and (c) a quadrivalent element selected from the group consisting of Sn and Pb wherein said semiconductor material has crystallinity and a concentration of said recombination center neutralizer is not higher than 5 mol %, and a concentration of said quadrivalent element is not higher than 10 mol %.

5. The transistor of claim 4 wherein said semiconductor material has an intrinsic conductivity type.

6. The transistor of claim 4 wherein said semiconductor material has a p-type or an n-type conductivity type.

12. An insulated gate field effect transistor according to claim 4 wherein said quadrivalent element is contained at a concentration from 0.1 mol % to 10 mol %.

14. An insulated gate field effect transistor according to claim 4 wherein said gate electrode comprises doped silicon.

17. An insulated gate field effect transistor according to claim 4 wherein said channel region is not doped with an N or P type conductivity impurity.

7. An insulated gate field effect transistor formed on an insulating surface, having at least a channel region, a gate insulating layer in contact with said channel region and a gate electrode insulated from said gate insulating layer, said channel region comprising a semiconductor material having crystallinity,

wherein said semiconductor material comprises silicon and germanium doped with a recombination center neutralizer selected from the group consisting of hydrogen and fluorine, and a concentration of said germanium is not higher than 10 mol %.

8. The transistor of claim 7 wherein said semiconductor material has an intrinsic conductivity type.

9. The transistor of claim 7 wherein a concentration of said recombination center neutralizer is not higher than 5 mol %.

15. An insulated gate field effect transistor according to claim 7 wherein said gate electrode comprises doped silicon.

18. An insulated gate field effect transistor according to claim 7 wherein said channel region is not doped with an N or P type conductivity impurity.

27. An insulated gate field effect transistor according to claim 7 wherein said germanium is contained in said semiconductor material uniformly.

20. An insulated gate field effect transistor comprising:

a semiconductor layer comprising silicon having crystallinity formed on an insulating surface;

source and drain regions formed within said semiconductor layer, said source and drain regions having one of N type or P type conductivity;

a channel region formed within said semiconductor layer between said source and drain regions, said channel region doped with a dopant impurity having a conductivity type opposite to the conductivity type of said source and drain regions;

a gate insulating film adjacent to said channel region; and

a gate electrode adjacent to said gate insulating film,

wherein said semiconductor layer is doped with a dangling bond neutralizer and a quadrivalent element, and a concentration of said quadrivalent element is not higher than 10 mol %.

21. An insulated gate field effect transistor according to claim 20 wherein said quadrivalent element is selected from the group consisting of Pb and Sn.

22. An insulated gate field effect transistor according to claim 20 wherein said quadrivalent element is germanium.

23. An insulated gate field effect transistor according to claim 20 wherein said gate electrode is located over said channel region.

28. An insulated gate field effect transistor according to claim 20 wherein said quadrivalent element is contained in said semiconductor layer uniformly.

24. An insulated gate field effect transistor comprising:

a semiconductor layer comprising silicon and germanium having crystallinity formed on an insulating surface;

source and drain regions formed within said semiconductor layer, said source and drain regions having one of N type or P type conductivity;

a channel region formed within said semiconductor layer between said source and drain regions, said channel region doped with a dopant impurity having a conductivity type opposite to the conductivity type of said source and drain regions;

a gate insulating film adjacent to said channel region; and

a gate electrode adjacent to said gate insulating film,

wherein said semiconductor layer is doped with a dangling bond neutralizer, and a concentration of said germanium is not higher than 10 mol %.

25. An insulated gate field effect transistor according to claim 24 wherein said gate electrode is located over said channel region.

29. An insulated gate field effect transistor according to claim 24 wherein said germanium is contained in said semiconductor layer uniformly.