Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
First Claim
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1. A ferromagnetic tunnel junction constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film, wherein:
- the barrier potential of said insulating film is within a range of 0.5 to 3 eV.
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Abstract
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
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Citations
52 Claims
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1. A ferromagnetic tunnel junction constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film, wherein:
the barrier potential of said insulating film is within a range of 0.5 to 3 eV. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A magnetoresistive element comprising:
a ferromagnetic tunnel junction including an insulating film, a first ferromagnetic film and a second ferromagnetic film, with said first ferromagnetic film and said second ferromagnetic film laminated via said insulating film, the barrier potential of said insulating film being within a range of 0.5 to 3 eV. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A magnetic head comprising:
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a slider with an air bearing surface at a side thereof facing opposite a magnetic recording medium; and at least one magnetic conversion element having a ferromagnetic tunnel junction, said ferromagnetic tunnel junction including an insulating film, a first ferromagnetic film and a second ferromagnetic film with said first ferromagnetic film and said second ferromagnetic film being laminated via said insulating film, the barrier potential of said insulating film being within a range of 0.5 to 3 eV. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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Specification