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Pressurized skull crucible for crystal growth using the Czochralski technique

  • US 5,863,326 A
  • Filed: 03/14/1997
  • Issued: 01/26/1999
  • Est. Priority Date: 07/03/1996
  • Status: Expired due to Fees
First Claim
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1. An apparatus for growing a crystal from a charge material with a seed crystal, the apparatus comprising:

  • a pressure vessel for containing a pressurized gas;

    a cooling unit for situation in the pressure vessel, having cooled surfaces defining an enclosure to receive the charge material, the enclosure being partially opened to expose the charge material to pressure exerted by the gas contained in the pressure vessel;

    an induction heating element for situation in the pressure vessel, for generating radio-frequency (rf) radiation to heat an interior portion of the charge material to form a melt zone that is contained by a relatively cool, exterior portion of the charge material that is closer relative to the melt zone, to the cooled surfaces of the cooling unit;

    a shield situated in the pressure vessel in operation of the apparatus, and arranged between the induction heating element and a wall of the pressure vessel, the shield preventing the rf radiation generated by the induction heating element from significantly heating the pressure vessel'"'"'s wall; and

    a pull rod situated in the pressure vessel, for holding the seed crystal in proximity to the charge material contained in the cooling unit.

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