Hot pressed and sintered sputtering target assemblies and method for making same

• US 5,863,398 A
• Filed: 10/11/1996
• Issued: 01/26/1999
• Est. Priority Date: 10/11/1996
• Status: Expired due to Term

• Current Assignee: Honeywell International Inc.
• Original Assignee: Johnson Matthey Electronics, Inc.
• Inventors: Kardokus, Janine K., Morales, Diana
• Primary Examiner(s): Ryan, Patrick
• Assistant Examiner(s): Knapp, Jeffrey T.
• Application Number:
  US08/729,505
• Time in Patent Office: 837 Days
• Field of Search: 228/194, 228/208, 148/527, 419/8, 419/6, 204/298.13
• US Class Current: 204/298.13
• CPC Class Codes: B22F 2998/00 Supplementary information concerning processes or compositions relating to powder metallurgy
• CPC Class Codes: B22F 3/001 Starting from powder comprising reducible metal compounds making ferrous alloys starting from compounds C22C33/0235
• CPC Class Codes: B22F 7/08 with one or more parts not made from powder B22F7/062 takes precedence
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01J 37/3435 Target holders (includes backing plates and endblocks)
• CPC Class Codes: H01J 37/3497 Temperature of target

Abstract

Described is a hot pressed and sintered sputtering target assembly formed of hot pressed and sintered metal powder diffusion bonded together and to a backing plate by use of an intermediate adhesion layer of titanium or titanium alloy.

Claims

1. A hot pressed and sintered sputtering target assembly comprising a hot pressed and sintered target surface diffusion bonded to a backing plate with a hot pressed and sintered intermediate adhesion layer between the target surface and backing plate, the backing plate comprising aluminum, aluminum alloy, titanium or titanium alloy, said intermediate layer comprising titanium or titanium alloy, and said target surface comprising:

(1) a mixture of titanium hydride and tungsten, or (2) tungsten or tungsten alloy, or (3) titanium and tungsten powder, or (4) titanium or titanium alloy, or (5) cobalt or cobalt alloy;

said target assembly being capable of sputtering use at higher power levels than at which solder-bonded target assemblies of the same materials can be used.

2. A hot pressed and sintered sputtering target assembly according to claim 1 wherein said target surface comprises TiAl or TiAl₃.

3. A method of making a hot pressed and sintered sputtering target assembly from metal powder comprising:

(a) providing powder titanium or powder titanium hydride in a die;

(b) providing over the powder of step (a) in the die a powder comprising;

(1) a mixture of titanium hydride and tungsten, (2) titanium and tungsten powder, or (3) tungsten or tungsten alloy, or (4) titanium or titanium alloy, or (5) cobalt or cobalt alloy;

(c) hot pressing and sintering the powder of steps (a) and (b) under vacuum into a solid preform; and

(d) diffusion bonding the solid preform of step (c) to a backing plate to form a target assembly capable of use for sputtering at higher power levels than at which solder-bonded target assemblies of the same materials can be used.

4. A method according to claim 3 wherein said powder is pressed at about 3000 to 5000 psi to press and sinter the powders into a solid preform.

5. A method according to claim 3 wherein in step (c) the powder of steps (a) and (b) is heated to about 1300°

C. to 1500°

C.

6. A method according to claim 5 wherein the temperature is about 1340°

C. to 1440°

C.

7. A method according to claim 3 wherein the powder of step (b) comprises a mixture of titanium hydride and tungsten or a titanium and tungsten alloy.

8. A method according to claim 7 wherein the backing plate comprises aluminum, aluminum alloy, titanium or titanium alloy.

9. A method according to claim 8 wherein the backing plate is titanium formed by hot pressing and sintering powder titanium or titanium hydride in the same die.