Process for providing a glass dielectric layer on an electrically conductive substrate and electrostatic chucks made by the process

• US 5,864,459 A
• Filed: 08/14/1996
• Issued: 01/26/1999
• Est. Priority Date: 08/14/1996
• Status: Expired due to Fees

• Current Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.), Virginia Tech Intellectual Properties, Inc.
• Original Assignee: Virginia Tech Intellectual Properties, Inc.
• Inventors: Bang, Jaecheol, Lu, Guo-Quan
• Primary Examiner(s): FLEMING, FRITZ M
• Application Number:
  US08/700,605
• Time in Patent Office: 895 Days
• Field of Search: 361/233, 361/234, 361/230, 501/55, 501/65, 501/66, 501/72, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

Processes for providing a durable glass dielectric layer on an electrically conductive substrate are disclosed. Also disclosed are electrostatic chucks made by the process that include an electrically conductive substrate coated with a layer of glass having a composition that includes 60 wt. % to 80 wt. % SiO₂.

Claims

1. An electrostatic chuck comprising:

an electrically conductive stainless steel substrate, said stainless steel substrate having an oxide layer formed on a surface thereof; and

a glass dielectric layer comprising 60 wt. % to 80 wt. % SiO₂ coated on said oxide layer of said stainless steel substrate;

said glass dielectric layer including a surface for contacting an object.

2. The electrostatic chuck according to claim 1, wherein the glass dielectric layer further comprises about 10 wt. % to about 20 wt. % B₂ O₃.

3. The electrostatic chuck according to claim 2, wherein the glass dielectric layer comprises 15 wt. % to 20 wt. % B₂ O₃.

4. The electrostatic chuck according to claim 2, wherein the glass dielectric layer further comprises about 3 wt. % to about 13 wt. % Na₂ O, about 2 wt. % to about 14 wt. % Al₂ O₃ and about 1 wt. % to about 7 wt. % Li₂ O.

5. The electrostatic chuck according to claim 2, wherein said glass dielectric layer is about 25 μ

m to about 200 μ

m thick.

6. The electrostatic chuck according to claim 2, wherein said glass dielectric layer has a resistivity of at least 1×

10¹⁰ ohm-cm at 150°

C.

7. The electrostatic chuck according to claim 2, wherein said glass dielectric layer does not contain titanium.

8. The electrostatic chuck according to claim 1, wherein the glass dielectric layer further comprises about 5 wt. % to about 20 wt. % Na₂ O and about 5 wt. % to about 20 wt. % BaO.

9. The electrostatic chuck according to claim 8, wherein said glass dielectric layer is about 25 μ

m to about 200 μ

m thick.

10. The electrostatic chuck according to claim 8, wherein said glass dielectric layer has a resistivity of at least 1×

10¹⁰ ohm-cm at 150°

C.

11. The electrostatic chuck according to claim 8, wherein said glass dielectric layer does not contain titanium.

12. The electrostatic chuck according to claim 1, wherein the glass dielectric layer comprises about 65 wt. % to about 75 wt. % SiO₂, about 8 wt. % to about 14 wt. % Na₂ O, about 8 wt. % to about 12 wt. % BaO, about 2 wt. % to about 4 wt. % K₂ O, about 0.5 wt. % to about 1.5 wt. % Al₂ O₃, about 0.25 wt. % to about 0.75 wt. % MgO and about 0.25 wt. % to about 0.75 wt. % CaO.

13. The electrostatic chuck according to claim 1, wherein the glass dielectric layer comprises about 60 wt. % to about 70 wt. % SiO₂, about 15 wt. % to about 18 wt. % B₂ O₃, about 7 wt. % to about 9 wt. % Na₂ O, about 6 wt. % to about 9 wt. % Al₂ O₃ and about 3 wt. % to about 5 wt. % Li₂ O.

14. A process for producing the electrostatic chuck according to claim 1, comprising:

providing the electrically conductive stainless steel substrate;

heating said electrically conductive stainless steel substrate to a temperature for a period of time sufficient to provide said oxide layer on said surface of said electrically conductive stainless steel substrate;

coating on said at least one oxidized surface of said electrically conductive stainless steel substrate a glass composition comprising 60 wt. % to 80 wt. % SiO₂ ; and

sintering said coated substrate to produce said electrostatic chuck.

15. The process according to claim 14, wherein said sintering is conducted in air at a temperature of about 650°

C. to about 850°

C.

16. The process according to claim 14, wherein said at least one surface of said electrically conductive stainless steel substrate is oxidized at a temperature of about 600°

C. to about 750°

C. for a period of about 30 minutes to about 60 minutes.

17. The process according to claim 14, wherein said electrostatic chuck is provided with a surface that conforms to a shape of an object to be electrostatically held by said electrostatic chuck.

18. The process according to claim 14, wherein the glass composition further comprises 15 wt. % to 20 wt. % B₂ O₃.

19. The process according to claim 14, wherein the glass composition comprises about 65 wt. % to about 75 wt. % SiO₂, about 8 wt. % to about 14 wt. % Na₂ O, about 8 wt. % to about 12 wt. % BaO, about 2 wt. % to about 4 wt. % K₂ O, about 0.5 wt. % to about 1.5 wt. % Al₂ O₃, about 0.25 wt. % to about 0.75 wt. % MgO and about 0.25 wt. % to about 0.75 wt. % CaO.