Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material

• US 5,865,657 A
• Filed: 06/07/1996
• Issued: 02/02/1999
• Est. Priority Date: 06/07/1996
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Candescent Technologies Corporation (Canon Inc.)
• Inventors: Haven, Duane A., Spindt, Christopher J., Ludwig, Paul N., Dobkin, Daniel M.
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US08/660,537
• Time in Patent Office: 970 Days
• Field of Search: 445/24, 445/50, 313/309
• US Class Current: 445/24
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

Claims

1. A method comprising the steps of:

distributing a multiplicity of particles over an electrically insulating layer;

providing electrically non-insulating gate material over the insulating layer at least in space between the particles;

removing the particles and substantially any material overlying the particles such that the remaining gate material forms a gate layer through which gate openings extend at the locations of the so-removed particles;

etching the insulating layer through the gate openings to form corresponding dielectric openings through the insulating layer substantially down to a lower electrically non-insulating region provided below the insulating layer; and

introducing electrically non-insulating emitter material into the dielectric openings to form corresponding electron-emissive elements over the lower non-insulating region such that the electron-emissive elements are externally exposed through the gate openings.

2. A method as in claim 1 wherein the particles are largely spherical.

3. A method as in claim 1 wherein the electron-emissive elements are operable in field-emission mode.

4. A method as in claim 1 wherein the introducing step comprises:

forming a lift-off layer over the gate layer such that lift-off openings vertically aligned to the gate openings extend through the lift-off layer;

depositing the emitter material over the lift-off layer and through the lift-off and gate openings into the dielectric openings; and

removing the lift-off layer so as to substantially remove any emitter material accumulated over the lift-off layer.

5. A method as in claim 4 wherein the emitter-material depositing step entails depositing the emitter material for a time sufficient to enable the emitter material to accumulate in the dielectric openings generally in the shape of cones pointing away from the lower non-insulating region.

6. A method as in claim 4 wherein the gate-material providing step entails depositing part of the gate material into space below the particles and above the insulating layer.

7. A method as in claim 1 wherein the introducing step comprises:

depositing the emitter material over the gate layer and through the gate openings into the dielectric openings; and

removing at least part of the emitter material accumulated over the gate layer outside the dielectric openings.

8. A method as in claim 7 wherein the emitter-material depositing step entails depositing the emitter material for a time sufficient to enable the emitter material to accumulate in the dielectric openings generally in the shape of cones pointing away from the lower non-insulating region.

9. A method as in claim 7 wherein the emitter-material removing step is performed electrochemically.

10. A method as in claim 1 further including, prior to the distributing step, the step of providing an intermediate layer over the insulating layer such that the particles are subsequently distributed over the intermediate layer above the insulating layer.

11. A method as in claim 10 further including, between the particle removing step and the insulating-layer etching step, the step of etching the intermediate layer through the gate openings to form corresponding intermediate openings through the intermediate layer, the insulating-layer etching step also being performed through the intermediate openings.

12. A method as in claim 11 wherein the intermediate layer adheres to both the insulating and gate layers.

13. A method as in claim 11 wherein the intermediate layer inhibits clumping of the particles during the distributing step.

14. A method as in claim 13 wherein the distributing step is performed under the influence of an applied electric field.

15. A method as in claim 11 wherein the introducing step comprises:

depositing the emitter material over the gate layer and through the gate and intermediate openings; and

electrochemically removing at least part of the emitter material accumulated over the gate layer outside the dielectric openings.

16. A method as in claim 11 wherein the intermediate layer comprises electrically non-insulating material.

17. A method as in claim 11 wherein the gate layer comprises at least two sublayers of different chemical composition.

18. A method as in claim 1 wherein the gate material comprises metal through which it is difficult to accurately etch small openings.

19. A method as in claim 1 wherein the gate material comprises gold.

20. A method as in claim 1 further including the steps of:

forming, prior to the distributing step, a pattern-transfer layer over the insulating layer;

removing, between the distributing step and the gate-material providing step, material of the pattern-transfer layer not shadowed by the particles to create corresponding pedestals from the pattern-transfer layer;

removing, between the gate-material providing step and the insulating-layer etching step, the pedestals.

21. A method as in claim 20 wherein the gate-material providing step entails selectively depositing the gate material over material of the insulating layer not shadowed by the particles.

22. A method as in claim 1 wherein the diameter of each gate opening generally decreases in going downward through that gate opening.

23. A method comprising the steps of:

distributing a multiplicity of particles over an electrically insulating layer;

providing electrically non-insulating gate material over the insulating layer such that the gate material covers space between the particles and extends substantially into space below the particles and above the insulating layer;

removing the particles and substantially any material overlying the particles such that the remaining gate material forms a gate layer though which beveled gate openings extend at the locations of the so-removed particles;

etching the insulating layer through the beveled gate openings to form corresponding dielectric openings through the insulating layer substantially down to a lower electrically non-insulating region provided below the insulating layer; and

forming electron-emissive elements over the lower non-insulating region such that each electron-emissive element is at least partially situated in a corresponding one of the dielectric openings.

24. A method as in claim 23 wherein each beveled gate opening generally decreases in diameter in going downward through that gate opening toward the lower non-insulating region such that the diameter of each gate opening reaches a minimum value at or near the lower non-insulating region.

25. A method as in claim 24 wherein the particles are largely spherical.

26. A method as in claim 24 wherein the minimum value of the diameter of each gate opening is less than the average diameter of the particle provided over the insulating layer at the location of that gate opening.

27. A method as in claim 24 wherein the gate material providing step is performed in a non-collimated manner.

28. A method as in claim 24 wherein the gate material providing step is performed by non-collimated sputtering.

29. A method as in claim 24 wherein the electron-emissive element forming step comprises:

depositing a lift-off layer over the gate layer such that the lift-off layer covers the edges of the gate layer at the gate openings without extending significantly laterally beyond the edges of the gate layer at the gate openings;

depositing electrically non-insulating emitter material over the lift-off layer and through the gate openings into the dielectric openings to at least partially form the electron-emissive elements; and

removing the lift-off layer so as to substantially remove any material overlying the lift-off layer.

30. A method as in claim 29 wherein the lift-off layer depositing step is performed at a deposition angle of 20°

-50°

relative to the upper surface of the insulating layer.

31. A method as in claim 29 wherein the emitter material accumulates over the lower non-insulating region to form the electron-emissive elements generally in the shape of cones.

32. A method as in claim 24 wherein the electron-emissive element forming step comprises:

depositing electrically non-insulating emitter material over the gate layer and through the gate openings into the dielectric openings to at least partially form the electron-emissive elements; and

removing at least part of the emitter material accumulated over the gate layer outside the dielectric openings such that the electron-emissive elements are externally exposed through the beveled gate openings.

33. A method as in claim 32 wherein the removing step is performed electrochemically.

34. A method as in claim 32 wherein the emitter material accumulates over the lower non-insulating region to form the electron-emissive elements generally in the shape of cones.

35. A method comprising the steps of:

distributing a multiplicity of particles over a pattern-transfer layer formed above an electrically insulating layer;

creating corresponding pedestals from the pattern-transfer layer by removing material of the pattern-transfer layer not-shadowed by the particles;

providing electrically non-insulating gate material over the insulating layer at least in space between the pedestals;

removing the pedestals and substantially any material, including the particles, overlying the pedestals such that the remaining gate material forms a gate layer through which gate openings extend at the locations of the so-removed particles;

etching the insulating layer through the gate openings to form corresponding dielectric openings through the insulating layer substantially down to a lower electrically non-insulating region provided below the insulating layer; and

forming electron-emissive elements over the lower non-insulating region such that each electron-emissive element is at least partially situated in a corresponding one of the dielectric openings.

36. A method as in claim 35 wherein the gate-material providing step comprises selectively depositing the gate material over material of the insulating layer not shadowed by the particles.

37. A method as in claim 35 further including the steps of:

forming, prior to the distributing step, (a) an electrically non-insulating intermediate layer over the insulating layer and (b) the pattern-transfer layer over the intermediate layer; and

etching, subsequent to the gate-material providing step, the intermediate layer through the gate openings to form corresponding intermediate openings through the intermediate layer down to the insulating layer, the insulating-layer etching step also being performed through the intermediate openings.

38. A method as in claim 37 wherein the gate-material providing step comprises electrochemically depositing the gate material over material of the intermediate layer not shadowed by the pedestals.

39. A method as in claim 35 wherein the pedestal-creating step comprises:

exposing the pattern-transfer layer to actinic radiation using the particles as an exposure mask to cause material of the pattern-transfer layer not shadowed by the particles to change chemical composition; and

removing the chemical changed material of the pattern-transfer layer.

40. A method as in claim 35 wherein the pedestal-creating step comprises anisotropically etching the pattern-transfer layer using the particles as an etch mask.