Alignment method for multi-level deep x-ray lithography utilizing alignment holes and posts

• US 5,866,281 A
• Filed: 11/27/1996
• Issued: 02/02/1999
• Est. Priority Date: 11/27/1996
• Status: Expired due to Term

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Klein, Jonathan L., Emmerich, Harald, Guckel, Henry
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US08/753,645
• Time in Patent Office: 797 Days
• Field of Search: 430/22, 430/312, 430/313, 430/314, 430/315, 430/327, 430/328
• US Class Current: 430/22
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: G03F 7/00 Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using photoresist structures for special production processes, see the relevant places, e.g. B44C, H01L, e.g. H01L21/00, H05K
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/2039 X-ray radiation
• CPC Class Codes: G03F 9/00 Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 9/70 for microlithography measuring printed patterns for monitoring overlay G03F7/70633 or focus G03F7/70641; projection system adjustment G03F7/70258; position control G03F7/70775

Abstract

The present invention provides a procedure for achieving accurate alignment between an X-ray mask and a device substrate for the fabrication of multi-layer microstructures. A first photoresist layer on the substrate is patterned by a first X-ray mask to include first alignment holes along with a first layer microstructure pattern. Mask photoresist layers are attached to second and subsequent masks that are used to pattern additional photoresist layers attached to the microstructure device substrate. The mask photoresist layers are patterned to include mask alignment holes that correspond in geometry to the first alignment holes in the first photoresist layer on the device substrate. Alignment between a second mask and the first photoresist layer is achieved by assembly of the second mask onto the first photoresist layer using alignment posts placed in the first alignment holes in the first photoresist layer that penetrate into the mask alignment holes in the mask photoresist layers. The alignment procedure is particularly applicable to the fabrication of multi-layer metal microstructures using deep X-ray lithography and electroplating. The alignment procedure may be extended to multiple photoresist layers and larger device heights using spacer photoresist sheets between subsequent masks and the first photoresist layer that are joined together using alignment posts.

Claims

1. A method for aligning a mask having radiation blocking material formed thereon in a pattern with a first photoresist layer, comprising the steps of:

(a) forming first alignment holes in the first photoresist layer;

(b) placing alignment posts in the first alignment holes, the alignment posts extending above a surface of the first photoresist layer;

(c) attaching a mask photoresist layer to the mask;

(d) forming mask alignment holes in the mask photoresist layer; and

(e) assembling the mask onto the first photoresist layer by placing the mask alignment holes over the alignment posts such that the alignment posts penetrate into the mask alignment holes.

2. The method of claim 1 wherein the first photoresist layer is attached to a substrate.

3. The method of claim 1 wherein the alignment posts are made of a photoresist material.

4. The method of claim 1 wherein the step of forming the first alignment holes includes the steps of exposing the first photoresist layer to radiation through a first mask having a first mask pattern formed thereon defining a geometry of the first alignment holes thereby making selected portions of the first photoresist layer corresponding to the geometry of the first alignment holes susceptible to removal by a developer, and developing the exposed first photoresist layer to remove the selected portions thereof to form the first alignment holes.

5. The method of claim 1 wherein the step of attaching the mask photoresist layer to the mask includes the step of attaching the mask photoresist layer over an area of the mask including an alignment structure membrane, the area of the mask including the alignment structure membrane having radiation blocking material formed thereon in a pattern defining a geometry of the mask alignment holes, and wherein the step of forming the mask alignment holes includes the steps of exposing the mask photoresist layer to radiation through the alignment structure membrane thereby making a selected portion of the mask photoresist layer corresponding to the geometry of the mask alignment holes susceptible to removal by a developer and developing the exposed mask photoresist layer to remove the selected portions thereof to form the mask alignment holes.

6. The method of claim 5 wherein the step of attaching the mask photoresist layer to the mask includes the steps of attaching photoresist sheets to the mask outside of the area of the mask including the alignment structure membrane and attaching the mask photoresist layer to the photoresist sheets such that the mask photoresist layer is attached over the area of the mask including the alignment structure membrane and is separated from the alignment structure membrane.

7. The method of claim 1 wherein the first alignment holes, mask alignment holes, and alignment posts have a geometry including rounded corners.

8. A method for aligning a mask having radiation blocking material formed thereon in a pattern with a first photoresist layer, comprising the steps of:

(a) forming first alignment holes in the first photoresist layer;

(b) placing alignment posts in the first alignment holes such that the alignment posts extend above a surface of the first photoresist layer;

(c) placing spacer photoresist sheets over the alignment posts, each spacer sheet having a central aperture corresponding in geometry to the alignment posts, such that the alignment posts penetrate into the central apertures in the spacer sheets when the spacer sheets are placed over the alignment posts;

(d) placing alignment posts in the central apertures of the spacer sheets such that the alignment posts extend above a surface of the spacer sheets;

(e) attaching a mask photoresist layer to the mask;

(f) forming mask alignment holes in the mask photoresist layer; and

(g) assembling the mask onto the first photoresist layer by placing the mask alignment holes over the alignment posts extending from the spacer sheets such that the alignment posts penetrate into the mask alignment holes.

9. The method of claim 8 wherein the first photoresist layer is attached to a substrate.

10. The method of claim 8 wherein the alignment posts are made of a photoresist material.

11. The method of claim 8 wherein the step of forming the first alignment holes includes the steps of exposing the first photoresist layer to radiation through a first mask having formed thereon a first mask pattern defining a geometry of the first alignment holes thereby making selected portions of the first photoresist layer corresponding to the geometry of the first alignment holes susceptible to removal by a developer, and developing the exposed first photoresist layer to remove the selected portions therefrom to form the first alignment holes.

12. The method of claim 8 wherein the step of attaching a mask photoresist layer to the mask includes the step of attaching the mask photoresist layer over an area of the mask including an alignment structure membrane wherein the area of the mask including the alignment structure membrane has radiation blocking material formed thereon in a pattern defining a geometry of the mask alignment holes, and wherein the step of forming the mask alignment holes includes the steps of exposing the mask photoresist layer to radiation through the alignment structure membrane thereby making a selected portion of the mask photoresist layer corresponding to the geometry of the mask alignment holes susceptible to removal by a developer and developing the exposed mask photoresist layer to remove the selected portions therefrom to form the mask alignment holes.

13. The method of claim 12 wherein the step of attaching a mask photoresist layer to the mask includes the steps of attaching photoresist sheets to the mask outside of the area of the mask including the alignment structure membrane and attaching the mask photoresist layer to the photoresist sheets such that the mask photoresist layer is attached over the area of the mask including the alignment structure membrane and is separated from the alignment structure membrane.

14. The method of claim 8 wherein the first alignment holes, mask alignment holes, and alignment posts have a geometry including rounded corners.

15. A method for fabricating aligned multi-layer microstructures, comprising the steps of:

(a) exposing a first photoresist layer to radiation through a first mask having radiation blocking material formed thereon in a pattern defining a first layer microstructure pattern and a first alignment hole geometry, thereby making selected portions of the first photoresist layer corresponding to the first layer microstructure pattern and the first alignment hole geometry susceptible to removal by a developer;

(b) developing the exposed first photoresist layer to form the first layer microstructure pattern and first alignment holes therein;

(c) applying a second photoresist layer over the first photoresist layer such that the second photoresist layer does not cover the first alignment holes;

(d) placing alignment posts in the first alignment holes, the alignment posts extending above a surface of the first photoresist layer;

(e) attaching a mask photoresist layer to a second mask over an alignment structure area of the second mask, the second mask having radiation blocking material formed thereon in a pattern defining a mask alignment hole geometry in the alignment structure area and radiation blocking material formed thereon in a pattern defining a second layer microstructure pattern in a device area of the second mask;

(f) exposing the mask photoresist layer to radiation through the second mask, thereby making a selected portion of the mask photoresist layer corresponding to the mask alignment hole geometry susceptible to removal by a developer;

(g) developing the exposed mask photoresist layer to remove the selected portions therefrom to form mask alignment holes therein;

(h) assembling the second mask onto the first photoresist layer by placing the mask alignment holes over the alignment posts such that the alignment posts penetrate into the mask alignment holes;

(i) exposing the second photoresist layer to radiation through the second mask, thereby making selected portions of the second photoresist layer corresponding to the second layer microstructure pattern susceptible to removal by a developer; and

(j) developing the second photoresist layer to form the second layer microstructure pattern therein.

16. The method of claim 15 wherein the first photoresist layer is attached to a substrate.

17. The method of claim 16 wherein the substrate has a metal plating base layer formed thereon, wherein the first photoresist layer is attached on top of the plating base layer, and including additionally the steps of:

(a) after the step of developing the first photoresist layer, electroplating a first layer metal microstructure onto the plating base layer in the first layer microstructure pattern; and

(b) after the step of developing the second photoresist layer, electroplating a second layer metal microstructure onto the first layer metal microstructure in the second layer microstructure pattern.

18. The method of claim 17 including additionally the step of masking the first alignment holes during the step of electroplating the first metal microstructure layer to prevent the deposition of metal into the first alignment holes.

19. The method of claim 17 including additionally the step of planarizing the first metal microstructure layer before the step of applying the second photoresist layer over the first photoresist layer.

20. The method of claim 19 wherein the step of developing the exposed first photoresist layer includes the steps of:

(a) masking an exposed area of the first photoresist layer corresponding to the first alignment hole geometry and developing the first photoresist layer to form the first layer microstructure pattern therein; and

(b) after the steps of electroplating the first metal microstructure layer and planarizing the first metal microstructure layer, developing the exposed first photoresist layer again to form the first alignment holes therein.

21. The method of claim 15 wherein the step of attaching a mask photoresist layer to the second mask includes the steps of attaching photoresist sheets to the second mask outside of an area of the second mask including alignment structure membranes and attaching the mask photoresist layer to the photoresist sheets such that the mask photoresist layer is attached over the area of the second mask including the alignment structure membrane and is separated from the alignment structure membrane.

22. The method of claim 15 wherein the alignment posts are made of a photoresist material.

23. The method of claim 15 wherein the first alignment holes, mask alignment holes, and alignment posts have a geometry including rounded corners.

24. The method of claim 15 wherein the step of assembling the second mask onto the first photoresist layer includes the steps of placing spacer photoresist sheets over the alignment posts in the first alignment holes, each spacer sheet having a central aperture corresponding in geometry to the alignment posts, such that the alignment posts penetrate into the central apertures of the spacer sheets, placing alignment posts into the central apertures of the spacer sheets such that the alignment posts extend above a surface of the spacer sheets, and placing the mask alignment holes over the alignment posts extending from the spacer sheets such that the alignment posts penetrate into the mask alignment holes.

25. The method of claim 15 wherein the steps of exposing the first and second photoresist layers to radiation include the steps of exposing the first and second photoresist layers to X-ray radiation, and wherein the patterns of radiation blocking material formed on the first and second masks are made of X-ray absorbing material.