Electrostatic chuck

• US 5,867,359 A
• Filed: 03/15/1996
• Issued: 02/02/1999
• Est. Priority Date: 03/03/1994
• Status: Expired due to Fees

• Current Assignee: Dr. Arthur Sherman
• Original Assignee: Dr. Arthur Sherman
• Inventors: Sherman, Arthur
• Primary Examiner(s): FLEMING, FRITZ M
• Application Number:
  US08/617,948
• Time in Patent Office: 1,054 Days
• Field of Search: 361/233, 361/234, 269/8, 269/903, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

An electrostatic chuck is provided having a plurality of small electrostatic structures for holding an electrically conductive workpiece forming a plate of a capacitor. Each electrostatic structure includes a first thermally conductive single-crystal dielectric sheet, and a first electrode in sheet form sandwiched between the first dielectric sheet and a second dielectric surface. The workpiece, typically a conductive or semiconductive wafer, is juxtaposed to the first dielectric sheet of each electrostatic structure and forms a second electrode. The second dielectric sheet, if thick, is used as a thermally conducting base plate which can be attached to a low pressure reactor. If the second dielectric is a thin sheet, then it is mounted to a thermally conductive metal base plate through which heat can be controllably conducted. The resultant electrostatic structure may optionally be brazed to the metal base plate if the thermal expansion characteristics of the two elements are sufficiently matched. The first thermally conductive dielectric sheet is preferably formed of sapphire (Al₂ O₃), which is sufficiently thermally conductive to allow for rapid heat transfer between the base plate and the workpiece. The first electrodes of different electrostatic structures are held at different electrical potentials (typically of several thousand volts difference) and a charge is maintained by this potential difference between selected electrostatic structures.

Claims

1. An electrostatic chuck with a holder for attachment to a wafer transfer mechanism, comprising:

an electrostatic paddle, including a bottom sapphire plate adjacent the holder, a sapphire frame adjacent the bottom sapphire plate, wherein the sapphire frame defines a plurality of slots, and a top sapphire plate adjacent the frame; and

a plurality of conductors, wherein each of the plurality of conductors rests in one of the slots, and wherein a brazing joins the top and bottom sapphire plates to the adjacent surfaces of the plurality of conductors, wherein the brazing pulls the top and bottom sapphire plates tightly against the sapphire frame for electrical isolation.

2. The electrostatic chuck of claim 1, wherein the holder comprises metal.

3. The electrostatic chuck of claim 1, wherein the plurality of conductors are made of solid niobium, and each of the conductors includes a stud brazed to the conductor.

4. The electrostatic chuck of claim 1, wherein the plurality of conductors are made of a metal that has a thermal expansion coefficient similar to sapphire.

5. The electrostatic chuck of claim 1, wherein alumina, grown by chemical vapor deposition, joins the adjacent contacting surfaces of the top sapphire plate, the bottom sapphire plate, and the sapphire frame.

6. An electrostatic chuck with a holder for attachment to a wafer transfer mechanism, comprising:

an electrostatic paddle, attached to the holder, including a bottom sapphire plate with a top surface and a bottom surface, a sapphire frame with a top surface and a bottom surface, and a top sapphire plate with a top surface and a bottom surface, wherein the bottom surface of the bottom sapphire plate is adjacent the holder, and the bottom surface of the sapphire frame is adjacent the top surface of the bottom sapphire plate, and the bottom surface of the top sapphire plate is adjacent the top surface of the sapphire frame; and

a plurality of conductors, wherein each of the plurality of conductors resides in the sapphire frame, and the conductors, the top sapphire plate, and the bottom sapphire plate are brazed together.

7. The electrostatic chuck of claim 6, wherein the holder comprises metal.

8. The electrostatic chuck of claim 6, wherein the plurality of conductors are made of solid niobium, wherein each conductor includes a stud brazed to the conductor.

9. The electrostatic chuck of claim 6, wherein the plurality of conductors are made of a metal that has a thermal expansion coefficient similar to sapphire.

10. The electrostatic chuck of claim 6, wherein alumina, grown by chemical vapor deposition, joins the adjacent contacting surfaces of the top sapphire plate, the bottom sapphire plate, and the sapphire frame.

11. An electrostatic chuck with a holder for attachment to a wafer transfer mechanism, comprising:

an electrostatic paddle, including a plurality of sapphire plates, including a bottom surface adjacent the holder; and

a plurality of conductors, adjacent the plurality of sapphire plates; and

wherein the plurality of conductors and the plurality of sapphire plates are brazed together, such that the plurality of conductors are sandwiched between the sapphire plates, and wherein alumina, grown by chemical vapor deposition, joins the adjacent contacting surfaces of the plurality of sapphire plates.

12. The electrostatic chuck of claim 11, wherein the holder comprises metal.

13. The electrostatic chuck of claim 11, wherein the plurality of conductors are made of solid niobium, wherein each conductor includes a stud brazed to the conductor.

14. The electrostatic chuck of claim 11, wherein the plurality of conductors are made of a metal that has a thermal expansion coefficient similar to sapphire.