Plasma processing apparatus
First Claim
1. A plasma processing apparatus comprising:
- a processing chamber;
a supporting electrode for supporting an object to be processed in the processing chamber;
a high-frequency power source electrically connected to the supporting electrode for providing a high-frequency power to the supporting electrode to generate a plasma in the processing chamber;
a measuring electrode provided near the object supported by the supporting electrode and exposed to the plasma, the measuring electrode measuring a self bias electrode potential near the object;
means for electrically connecting the measuring electrode to the supporting electrode; and
means for obtaining the self bias electrode potential measured by the measuring electrode, by removing the high-frequency component of the high-frequency power, the obtaining means electrically connected to the supporting electrode.
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Accused Products
Abstract
Disclosed is an etching apparatus for etching wafer W held on an electrostatic chuck 11 by using a plasma generated in a space between an upper electrode 21 and a susceptor 5 in a processing chamber 2. The plasma is generated by supplying a high frequency power from a high frequency power supply 43 via a power supply line 42. The etching apparatus includes a measuring electrode 18 made of silicon, attached to a focus-ring 17 provided around wafer W. The measuring electrode 18 can be electrically connected to a susceptor 5. A lead wire 44 is used, an end of which is connected to the power supply bar 42 and the other end of which is connected to a voltage indicator 46 for monitoring VDC via an RF filter 45. The VDC level having a constant correlation with the VDC generated on wafer W, can be detected through monitoring by the voltage indicator 46.
147 Citations
12 Claims
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1. A plasma processing apparatus comprising:
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a processing chamber; a supporting electrode for supporting an object to be processed in the processing chamber; a high-frequency power source electrically connected to the supporting electrode for providing a high-frequency power to the supporting electrode to generate a plasma in the processing chamber; a measuring electrode provided near the object supported by the supporting electrode and exposed to the plasma, the measuring electrode measuring a self bias electrode potential near the object; means for electrically connecting the measuring electrode to the supporting electrode; and means for obtaining the self bias electrode potential measured by the measuring electrode, by removing the high-frequency component of the high-frequency power, the obtaining means electrically connected to the supporting electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification