Magnetron sputtering system

• US 5,868,914 A
• Filed: 04/12/1996
• Issued: 02/09/1999
• Est. Priority Date: 04/13/1995
• Status: Expired due to Fees

• Current Assignee: OTB Group BV
• Original Assignee: Odme International B.V. (Toolex International NV)
• Inventors: Visser, Jan, Landsbergen, Jeroen F.M.
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): McDonald, Rodney G.
• Application Number:
  US08/634,901
• Time in Patent Office: 1,033 Days
• Field of Search: 204/298.06, 204/298.11, 204/298.14, 204/298.16, 204/298.17, 204/298.18, 204/298.19, 204/298.12
• US Class Current: 204/298.06
• CPC Class Codes: G11B 7/26 Apparatus or processes specially adapted for the manufacture of record carriers
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode
• CPC Class Codes: H01J 37/347 Thickness uniformity of coated layers or desired profile of target erosion

Abstract

A magnetron sputtering system comprising a sputtering chamber. Present within the chamber are a flat cathode plate, an anode, which is cylindrical in one embodiment, and an annular auxiliary electrode. The electrodes are provided co-axially. In this embodiment the anode extends axially from a central area of the sputtering surface of the cathode plate. The auxiliary electrode extends axially from a circumferential area of the sputtering surface of the cathode plate. The anode is electrically insulated from the cathode plate. During operation the auxiliary electrode has a negative potential in relation to the anode potential. Furthermore the chamber comprises a receiving device for receiving a flat substrate to be coated with cathode plate material at a position opposite and parallel to the cathode plate. A magnetic device is provided outside the chamber for generating an electron trap around the anode, which magnetic device is surrounded by the auxiliary electrode. The magnetic device generates an asymmetric magnetic field. The auxiliary electrode enhances the interception of electrons in the electron trap.

Claims

1. A magnetron sputtering system comprising a chamber, and present within said chamber

a flat cathode plate,

an anode centrally positioned on said flat cathode plate,

an annular auxiliary electrode, which extends axially from a circumferential area of a sputtering surface of said cathode plate, is positioned co-axially with said cathode plate and during operation has a negative potential in relation to the anode potential and thereby exerts an electric force in the direction of a central area of the cathode plate, said electric force directing electrons inwardly into a plasma field, and

a receiving device for receiving a flat substrate to be coated with cathode plate material at a position opposite and parallel to said cathode plate, and present outside said chamber:

a magnetic device for generating an electron trap over part of an intermediate area of the sputtering surface of the cathode plate located between a central area and said circumferential area, said electron trap being surrounded by said annular auxiliary electrode,

whereby said magnetic device generates an asymmetric magnetic field, in such a manner that, seen from a geometrical set of points where a direction of a perpendicular magnetic field component is reversed, a field strength of magnetic field components parallel and perpendicular to the cathode plate is smaller in the direction of the circumferential area of the cathode plate than in the direction of the central area of the cathode plate.

2. A magnetron sputtering system according to claim 1, wherein said anode is cylindrical and extends in an axial direction from the central area of the sputtering surface of said cathode plate, which is provided co-axially with said cathode plate and which is electrically insulated from said cathode plate, whereby the electron trap is present around said cylindrical electrode.

3. A magnetron sputtering system according to claim 1, characterized in that said annular auxiliary electrode is mounted on said cathode plate in such manner as to make electric contact therewith.

4. A magnetron sputtering system according to claim 1, characterized in that said annular auxiliary electrode is clamped down on said cathode plate.

5. A magnetron sputtering system according to claim 1, characterized in that said annular auxiliary electrode is made of the same material as the cathode.

6. A magnetron sputtering system according to claim 5, characterized in that said annular auxiliary electrode and said cathode are integral with each other.

7. A magnetron sputtering system according to claim 1, characterized in that the distance over which said annular auxiliary electrode extends beyond the sputtering surface of the cathode plate within said chamber is larger than the radius of the movement of electrons in said electron trap.

8. A magnetron sputtering system according to claim 1, characterized in that said anode is passed through a central through opening of the cathode plate with the interposition of an insulation ring.

9. A magnetron sputtering system according to claim 8, characterized in that said anode present within said chamber is provided with a shielding part at a location which is related to the position of the passage through said cathode plate, which shielding part functions to prevent the deposition of material on said insulation ring.

10. A magnetron sputtering system according to claim 1, characterized in that an end of said anode projecting into said chamber is arranged for abutment against said substrate to be coated, said end being configured such that a circular central area of said substrate is shielded from the deposition of material.

11. A magnetron sputtering system according to claim 1, characterized in that said receiving device is arranged for receiving said substrate to be coated in such a manner that a circumferential edge area of said substrate is shielded from the deposition of material.

12. A magnetron sputtering system according to claim 1, characterized in that a shield is provided within said chamber, which shield allows deposition of material on a substrate to be coated, but which shields parts of said chamber from deposition of material.

13. A magnetron sputtering system according to claim 1, characterized in that said magnetic device comprises two co-axial annular permanent magnets, whereby a first permanent magnet is aligned with the central area of the sputtering surface of said cathode plate, a second permanent magnet is aligned with the circumferential area of the sputtering surface of said cathode plate and said first permanent magnet is stronger than said second permanent magnet and is mounted closer to the sputtering surface of said cathode plate.

14. A magnetron sputtering system according to claim 13, characterized in that said first permanent magnet comprises a plurality of stacked-together permanent magnet parts, and said second permanent magnet comprises a smaller number of magnet parts.

15. A magnet sputtering system according to claim 13, characterized in that a yoke is mounted on said two co-axial annular permanent magnets.