Metalization structure and manufacturing method thereof

• US 5,868,949 A
• Filed: 11/14/1995
• Issued: 02/09/1999
• Est. Priority Date: 11/14/1994
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Tanaka, Minoru, Nishiki, Masashi, Ogihara, Mamoru, Terouchi, Toshio, Matsuzaki, Eiji, Sotokawa, Hideo, Shigi, Hidetaka, Matsuyama, Haruhiko
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/557,320
• Time in Patent Office: 1,183 Days
• Field of Search: 216/13, 216/17, 216/18, 216/19, 216/20, 216/39, 216/56, 29/852, 428/209, 428/901, 428/473.5, 427/97
• US Class Current: 216/18
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/112 directly combined with via connections
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 2201/09472 Recessed pad for surface mounting; Recessed electrode of component
• CPC Class Codes: H05K 2201/09509 Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2201/096 Vertically aligned vias, holes or stacked vias
• CPC Class Codes: H05K 2201/10674 Flip chip
• CPC Class Codes: H05K 3/4605 made from inorganic insulating material
• CPC Class Codes: Y10T 428/24917 including metal layer

Abstract

A metalization structure having a first conductor layer on the surface of an underlying layer and, further, a second conductor layer connected conductively with the first conductor layer in which a polyimide insulative film of low thermal expansion coefficient is present between at least an end of a pattern of the second conductor layer and the first conductor layer, for stably obtaining a metalization structure of high reliability and free from the worry of peeling of the conductor portion from a substrate or occurrence of cracking to the underlying layer.

Claims

1. A metalization structure comprising a conductor layer and a insulative film containing a polyimide and, further, a conductor layer of a conductor material on the surface of the insulative film,

said polyimide being obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (15);

##STR47## where R1 represents at least one tetravalent organic group selected from the following structural formula (2);

##STR48## and a diamine compound represented by the following general formula (16);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.2 --NH.sub.2 (

     16)

where R2 is at least one bivalent organic group selected from the following structural formulae (3);

##STR49##

2. A metalization structure as defined in claim 1, wherein the polyimide is obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (21);

##STR50## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR51## and a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR52##

3. A metalization structure as defined in claim 1, wherein the polyimide is obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (21);

##STR53## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR54## and a diamine compound including;

based on 100 mol of the entire amount,

0to 95 (excluding

     0) mol of a diamine compound represented by the following general formula (22);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.8 --NH.sub.2 (

     22)

where R8 is at least one bivalent organic group selected from the following structural formulae (13);

##STR55## and 5to 100 mol of a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR56##

5. A metalization structure as defined in claim 1 or 4, wherein the conductor layer at least has a layer c omprising a conductor material containing nickel.

6. A metalization structure as defined in claim 5, wherein the conductor layer has a layer comprising chromium, titanium, molybdenum or tungsten, and a layer comprising a conductor material containing nickel.

7. A metalization structure as defined in claim 1 or 4, wherein the thickness of the conductor layer is not more than 3.0 μ

m.

8. A metalization structure as defined in claim 6, wherein the thickness of the layer comprising the conductor material containing nickel is not more than 3.0 μ

m.

4. A metalization structure comprising an insulative film contained a polyimide and, further, comprising a conductor layer of a conductor material on the surface of the insulative film,

said polyimide being obtained by polymerizing:

based on 100 mol of the entire amount of the tetracarboxylic acid dianhydride,

60 to 100 ml of a tetracarboxylic acid dianhydride represented by the following general formula (17);

##STR57## where R3 represents at least one tetravalent organic group selected from the following structural formulae (6);

##STR58## 0to 40 (excluding

     0) mol of a tetracarboxylic acid dianyydride represented by the following general formula (18);

##STR59## where R4 is at least one tetravalent organic group selected from the following structural formulae (7);

##STR60## 60to 100 mol of a diamine compound represented by the following general formula (19);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.5 --NH.sub.2 (

     19)

where R5 is at least one bivalent organic group selected from the following structural formulae (8);

##STR61## and 0to 40 (excluding

     0) mol of a diamine compound represented by the following general formula (20);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.6 --NH.sub.2 (

     20)

where R6 is at least one bivalent organic group selected from the following structural formulae (9);

##STR62##

9. A metalization structure comprising a first conductor layer on a surface of an underlying and, further, a second conductor layer connected conductively with the first conductor layer,

a structure in which a polyimide insulative film is present between at least an end of the second conductor layer pattern and the first conductor layer being provided to at least a portion thereof.

10. A metalization structure as defined in claim 9, wherein a portion of the second conductor layer is in direct formation with the surface of the first conductor layer.

11. A metalization structure as defined in claim 9, wherein the first conductor layer and the second conductor layer are connected by way of a third conductor layer.

12. A metalization structure as defined in claim 9,

wherein the first conductor layer at least has a layer comprising a first conductor material containing copper, and

the second conductor layer at least has a layer comprising a second conductor material containing nickel.

13. A metalization structure as defined in claim 12, wherein the first conductor layer has:

a layer comprising chromium, titanium, molybdenum or tungsten;

a layer comprising the first conductor material; and

a layer comprising chromium, titanium, molybdenum or tungsten, in this order.

14. A metalization structure as defined in claim 12, wherein the second conductor layer has a layer comprising chromium, titanium, molybdenum or tungsten, and a layer comprising the second conductor material.

15. A metalization structure as defined in claim 11, wherein the third conductor layer is a layer comprising a conductor material containing copper.

16. A metalization structure as defined in claim 9, wherein the thickness of the second conductor layer is not more than 3.0 μ

m.

17. A metalization structure as defined in claim 14, wherein the thickness of the layer comprising the second conductor material is not more than 3.0 μ

m.

18. A metalization structure as defined in claim 9, wherein the polyimide insulative film contains a polyimide obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (15);

##STR63## where R1 is at least one tetravalent organic group selected from the following structural formulae (2);

##STR64## and a diamine compound represented by the following general formula (16);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.2 --NH.sub.2 (

     16)

where R2 is at least bivalent organic group selected from the following structural formulae (3);

##STR65##

19. A metalization structure as defined in claim 18, wherein the polyimide is obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (21);

##STR66## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR67## and a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR68##

20. A metalization structure as defined in claim 18, wherein the polyimide is obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the general formula (21);

##STR69## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR70## and a diamine compound including;

based on 100 mol of the entire amount of the diamine compound,

0to 95 mol of a diamine compound represented by the following general formula (22);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.8 --NH.sub.2 (

     22)

where R8 is at least one bivalent organic group selected from the following structural formulae (13);

##STR71## and 5to 100 mol of a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR72##

21. A metalization structure as defined in claim 9, wherein the polyimide insulative film contains a polyimide obtained by polymerizing:

based on 100 mol of the entire amount of the tetracarboxylic acid dianhydride,

60 to 100 mol of a tetracarboxylic acid dianhydride represented by the following general formula (17);

##STR73## where R3 is at least one tetravalent organic group selected from the following structural formulae (6);

##STR74## 0to 40 (excluding

     0) mol of a tetracarboxylic acid dianhydride represented by the following general formula (18);

##STR75## where R4 is at least one tetravalent organic group selected from the following structural formula (7);

##STR76## 60to 100 mol of a diamine compound represented by the following general formula (19);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.5 --NH.sub.2 (

     19)

where R5 is at least one bivalent organic group selected from the following structural formulae (8);

##STR77## and 0to 40 (excluding

     0) mol of a diamine compound represented by the following general formula (20);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.6 --NH.sub.2 (

     20)

where R6 is at least one bivalent organic group selected from the following structural formulae (9);

##STR78##

22. A method of manufacturing a metalization structure comprising:

a first conductor layer forming step of forming a conductor pattern of a first conductor layer on the surface of an underlying layer;

an insulative film forming step of forming a polyimide insulative film having through holes at positions for exposing at least a portion of the conductor pattern of the first conductor layer, on the surface of the underlying layer provided with the first conductor layer; and

a second conductor forming step of forming a conductor pattern of a second conductor layer so as to cover the exposed conductor pattern of the first conductor layer and the periphnery for the opening of the through holes of the polyimide insulative film.

24. A method of manufacturing a metalization structure as defined in claim 22 or 23,

wherein the first conductor layer forming step has at least a step of forming a layer comprising a first conductor material containing copper, and

the second conductor layer forming step has at least a step of forming a layer comprising a second conductor material containing nickel.

25. A method of manufacturing a metalization structure as defined in claim 24, wherein the first conductor layer forming step comprises:

a step of forming a layer comprising chromium, titanium, molybdenum or tungsten;

a step of forming a layer comprising the first conductor material; and

a step of forming a layer comprising chromium, titanium, molybdenum or tungsten, in this order.

26. A method of manufacturing a metalization structure as defined in claim 24, wherein the second conductor layer forming step comprises:

a step of forming a layer comprising chromium, titanium, molybdenum or tungsten; and

a step of forming a layer comprising the second conductor material.

28. A method of manufacturing a metalization structure as defined in claim 22 or 23, wherein the thickness of the second conductor layer formed in the second conductor layer forming step is not more than 3.0 μ

m.

29. A method of manufacturing a metalization structure as defined in claim 26, wherein the thickness of the second conductor layer formed in the second conductor layer forming step is not more than 3.0 μ

m.

30. A method of manufacturing a metalization structure as defined in claim 22 or 23, wherein the insulative film forming step includes a step of obtaining a polyimide by heat-curing a polyimide precursor obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (15);

##STR79## where R1 represents at least one tetravalent organic group selected from the following structural formula;

##STR80## and a diamine compound represented by the following general formula (16);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.2 --NH.sub.2 (

     16)

where R2 is at least one bivalent organic group selected from the following structural formulae (3);

##STR81##

31. A method of manufacturing a metalization structure as defined in claim 30, wherein the step of obtaining the polyimide is a step of heat-curing a polyimide precursor obtained by polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (21);

##STR82## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR83## and a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR84##

32. A method of manufacturing a metalization structure as defined in claim 30, wherein the step of obtaining the polyimide is a step of heat-curing a polyimide precursor obtained in polymerizing:

a tetracarboxylic acid dianhydride represented by the following general formula (21);

##STR85## where R7 is at least one tetravalent organic group selected from the following structural formulae (12);

##STR86## and a diamine compound including;

based on 100 mol of the entire amount,

0to 95 (excluding

     0) mol of a diamine compound represented by the following general formula (22);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.8 --NH.sub.2 (

     22)

where R8 is at least one bivalent organic group selected from the following structural formulae (13);

##STR87## and 5to 100 mol of a diamine compound represented by the following general formula (23);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.9 --NH.sub.2 (

     23)

where R9 is at least one bivalent organic group selected from the following structural formulae (14);

##STR88##

33. A method of manufacturing a metalization structural as defined in claim 22 or 23, wherein the insulative film forming step contains a step of heat-curing a polyimide precursor obtained by polymerizing:

based on the entire amount of 100 mol of the tetracarboxylic acid dianhydride,

60 to 100 mol, of a tetracarboxylic acid dianhydride represented by the following general formula (17);

##STR89## where R3 represents at least one tetravalent organic group selected from the following structural formula (6);

##STR90## 0to 40 (excluding

     0) mol of a tetracarboxylic acid dianhydride represented by the following general formula (18);

##STR91## where R4 is at least one tetravalent organic group selected from the following structural formulae (7);

##STR92## 60to 100 mol of a diamine compound represented by the following general formula (19);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.5 --NH.sub.2 (

     19)

where R5 is at least one bivalent organic group selected from the following structural formulae (8);

##STR93## and 0to 40 (excluding

     0) mol of a diamine compound represented by the following general formula (20);

space="preserve" listing-type="equation">H.sub.2 N--R.sup.6 --NH.sub.2 (

     20)

where R6 is at least one bivalent organic group selected from the following structural formulae (9);

##STR94##

34. A method of manufacturing a metalization structure as defined in claim 22 or 23, wherein the insulative film forming step comprises:

a varnish coating step of coating a polyimide precursor varnish on the surface of the underlying layer having the first conductor layer and then applying prebaking to form a polyimide precursor layer;

a through hole forming step of forming through holes to locations of the polyimide precursor to expose at least a portion of the first conductor layer pattern; and

a polymerization step of heat-curing the polyimide precursor layer, in this order.

35. A method of manufacturing a metalization structure as defined in claim 34,

wherein the polyimide precursor varnish coated in the varhish coating step contains a photosensitive ingredient, and

the through hole forming step includes a step of irradiating light to the polyimide precursor composition film by way of a photomask of a predetermined pattern and then applying development.

36. A method of manufacturing a metalization structure as defined in claim 22 or 23, wherein the second conductor layer forming step includes a step of forming the conductor layer by plating or RF sputtering.

23. A method of manufacturing a metalization structure comprising:

a first conductor layer forming step of forming a conductor pattern of a first conductor layer on the surface of an underlying layer;

an insulative film forming step of forming a polyimide insulative film having through holes at positions for exposing at least a portion of the conductor pattern of the first conductor layer, on the surface of the underlying layer provided with the first conductor layer;

a via wiring forming step of forming via wirings by filling a conductor to the through holes; and

a second conductor layer forming step of forming a conductor pattern of a second conductor layer so as to cover the exposed surface of the conductor constituting the via wirings filled to the conductor and the periphery of the exposed surface.

27. A method of manufacturing a metalization structure as defined in claim 23, wherein the conductor material filled in the through hole in the via wiring forming step contains copper.