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Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser

  • US 5,872,022 A
  • Filed: 09/01/1995
  • Issued: 02/16/1999
  • Est. Priority Date: 09/02/1994
  • Status: Expired due to Fees
First Claim
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1. A method of etching a semiconductor comprising etching a III-V compound semiconductor layer using an etching gas including the Group V element of said III-V compound semiconductor layer and excluding etching gases including halogens while keeping said III-V compound semiconductor layer at a temperature higher than a crystal growth temperature of said III-V compound semiconductor layer.

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