Method for manufacturing a mechanical force sensing semiconductor device

• US 5,872,024 A
• Filed: 04/14/1997
• Issued: 02/16/1999
• Est. Priority Date: 08/21/1992
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Fujii, Tetsuo, Imai, Masahito
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/834,129
• Time in Patent Office: 673 Days
• Field of Search: 438/456, 438/459, 438/461, 438/977, 438/111, 438/118, 438/120, 438/50, 438/52
• US Class Current: 438/52
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: C07C 303/32 of salts of sulfonic acids
• CPC Class Codes: C07C 303/44 Separation; Purification
• CPC Class Codes: C07C 309/17 containing carboxyl groups bound to the carbon skeleton
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: G01C 19/5656 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part

Abstract

A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A charge in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Claims

1. A method of manufacturing a semiconductor mechanical sensor, comprising:

forming a groove in a first surface of a semiconductor substrate to thereby contour a movable member forming portion;

depositing a sacrificial material to fill said groove and cover said movable member forming portion;

forming an electrode film to face a region of said movable member forming portion through said sacrificial material;

providing a pedestal over said first surface of said semiconductor substrate, whereby said sacrificial material and said electrode film are sandwiched between said semiconductor substrate and said pedestal;

thinning said semiconductor substrate from a second surface which is opposite said first surface; and

removing said sacrificial material from said second surface to thereby make said movable member forming portion a movable member, said movable member being movable with respect to said electrode film which is supported by said pedestal and vertically spaced apart from said movable member.

2. A method of manufacturing a semiconductor mechanical sensor according to claim 1, wherein said groove forming includes contouring a horizontal movable electrode part on a sidewall portion of said movable member forming portion and a horizontal fixed electrode part on a sidewall portion opposite to said horizontal movable electrode part.

3. A method of manufacturing a semiconductor mechanical sensor according to claim 1, wherein said groove forming includes providing a vertical movable electrode part at said region, said electrode film functioning as a vertical fixed electrode part.

4. A method of manufacturing a semiconductor mechanical sensor according to claim 1, further comprising, prior to depositing said sacrificial material, forming an insulator material covering said first surface of said semiconductor substrate including an inner surface of said groove.

5. A method of manufacturing a semiconductor mechanical sensor according to claim 1, further comprising, prior to forming said electrode film, forming an insulator material vertically overlapping with at least said region of said movable member forming portion where said electrode film faces via said sacrificial material.

6. A method of manufacturing a semiconductor mechanical sensor according to claim 1, wherein providing said pedestal includes depositing an insulating material over said first surface to cover said electrode film, flattening and smoothing a surface of said insulating material, and joining said flattened and smoothed surface with a pedestal substrate.

7. A method of manufacturing a semiconductor mechanical sensor according to claim 1, wherein said semiconductor substrate comprises monocrystalline silicon.