Method of cleaning wafer after partial saw

• US 5,872,046 A
• Filed: 04/03/1997
• Issued: 02/16/1999
• Est. Priority Date: 04/10/1996
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kaeriyama, Toshiyuki, Harada, Takeshi
• Primary Examiner(s): PICARDAT, KEVIN M
• Application Number:
  US08/833,165
• Time in Patent Office: 684 Days
• Field of Search: 438/460, 438/461, 438/462, 438/463, 438/464, 438/465
• US Class Current: 438/465
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304

Abstract

A process of cleaning debris (24) from a partially-sawn semiconductor wafer (10). The method of the present invention includes cleaning a partially fabricated wafer (12) that may have fabricated on it a micromechanical device (16) which can be easily damaged by particles (24) generated by the partial-saw process, such as oxide particles. The present invention includes cleaning the partially-sawn wafer with a solution including diluted hydrofluoric acid and an alkyl glycol. Clean-up using this solution accomplishes two goals. First, it removes debris including oxide particles on the wafer surface and in the kerfs (22), and second, reduces the depth of damage in the surface (26) of a CMOS layer (14) proximate the kerf (22) which has been determined to be a source of particles generated after a wafer cleanup process. A subsequent megasonic process is utilized to acoustically vibrate the wafer while bathed in deionized water to further remove any other particles. After the clean-up process of the present invention, the semiconductor wafer is completed by performing at least one more semiconductor process. An substantially improved yield is realized by utilizing the cleaning process of the present invention.

Claims

1. A process for cleaning a semiconductor wafer having partially completed structures, comprising the steps of:

a) coating said semiconductor wafer with a protective layer;

b) partially sawing streets in said wafer;

c) applying a solution to said wafer including diluted hydrofluoric acid and an alkyl glycol;

d) processing said wafer to complete said structures; and

e) breaking said wafer along said partially sawn streets into individual chips.

2. The process as specified in claim 1 further comprising the step of including deionized water in said solution.

3. The process as specified in claim 1 wherein said solution comprises more than 50 percent of said alkyl glycol by volume.

4. The process as specified in claim 1 wherein said solution is approximately 8 parts said alkyl glycol to 1 part diluted hydrofluoric acid to 1 part deionized water.

5. The process as specified in claim 1 wherein said alkyl glycol comprises either of glycerine, propylene glycol, ethylene glycol or butylene glycol.

6. The process as specified in claim 1 wherein said hydrofluoric acid is buffered.

7. The process as specified in claim 4 wherein said hydrofluoric acid is about 0.5% concentration.

8. The process as specified in claim 1 further comprising the step of acoustically vibrating said solution before performing said step d).

9. The process as specified in claim 1 comprising the step of bathing said wafer in said solution in said step c) to clean said wafer.

10. The process as specified in claim 4 comprising the step of bathing said wafer in said solution to remove approximately 600 Angstroms of said protective layer proximate said streets.

11. The process as specified in claim 1 wherein said wafer has a layer of oxide disposed beneath said protective layer, said layer being sawn into during said step b).

12. The process as specified in claim 1 wherein said wafer comprises a partially fabricated micromechanical device.

13. The process as specified in claim 1 wherein said protective layer comprises photoresist.

14. The process as specified in claim 1 wherein said protective layer comprises of oxide/photoresist.

15. The process as specified in claim 1 further comprising the step of drying said wafer after step c).

16. The process as specified in claim 15, comprising the step of drying said wafer by blowing nitrogen gas across said wafer.