Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit

• US 5,872,360 A
• Filed: 12/12/1996
• Issued: 02/16/1999
• Est. Priority Date: 12/12/1996
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Rao, Valluri R., Paniccia, Mario J.
• Primary Examiner(s): Westin, Edward P.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US08/766,149
• Time in Patent Office: 796 Days
• Field of Search: 250/341.4, 250/341.8, 250/340, 250/341.2, 324/753, 324/752, 324/750
• US Class Current: 250/341.4
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence

Abstract

A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength near the band gap of a semiconductor such as silicon. The laser beam is focused onto a P-N junction, such as for example the drain of an MOS transistor, through the back side of the semiconductor substrate. As a result of photo-absorption, the laser beam is partially absorbed in the P-N junction. When an external electric field is impressed on the P-N junction, such as when for example the drain of the transistor switches, the degree of photo-absorption will be modulated in accordance with the modulation in the electric field due to the phenomenon of electro-absorption. Electro-absorption also leads to electro-refraction which leads to a modulation in the reflection coefficient for the light reflected from the P-N junction/oxide interface. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Any amplitude modulation in this reflected laser beam is detected with an optical detection system, and is attributed to a corresponding modulation in the electric field in the P-N junction due to the combined effects of electro-absorption and electro-refraction.

Claims

1. A method for detecting an electric field in an integrated circuit, the method comprising the steps of:

operating a laser beam at a wavelength near a band gap of a semiconductor of the integrated circuit;

focusing the laser beam through a back side of the semiconductor on an active region of the semiconductor;

detecting an amplitude modulation of a reflected laser beam from the active region through the back side of the semiconductor; and

,

attributing the amplitude modulation of the reflected laser beam to the electric field in the active region of the semiconductor.

2. The method described in claim 1 including the additional step of adjusting the wavelength in response to a change in the band gap of the semiconductor.

3. The method described in claim 1 including the additional step of generating an output waveform in response to the amplitude modulation of the reflected laser beam.

4. The method described in claim 1 wherein the semiconductor comprises silicon.

5. The method described in claim 1 wherein the active region comprises an N diffusion region disposed within a P substrate.

6. The method described in claim 1 wherein the active region comprises a P diffusion region disposed within an N substrate.

7. The method described in claim 1 wherein the semiconductor is comprised in a fully packaged integrated circuit.

8. The method described in claim 7 wherein the fully packaged integrated circuit is a control collapse chip connection mounted integrated circuit.

9. The method described in claim 7 including the additional step of operating the fully packaged integrated circuit on a tester apparatus.

10. The method described in claim 7 including the additional step of operating the fully packaged integrated circuit on a printed circuit board.

11. The method described in claim 1 wherein the detecting step includes the step of reflecting the laser beam off a front side metal disposed near the active region.

12. The method described in claim 1 including the additional step of thinning the semiconductor to approximately 100 to 200 μ

m before the step of focusing the laser beam on the active region through the back side of the semiconductor.

13. The method described in claim 1 wherein the detecting step includes the step of applying a bias across the active region of the integrated circuit.

14. The method described in claim 1 wherein the integrated circuit is a CMOS integrated circuit.

15. The method described in claim 1 wherein the laser beam is a mode locked laser beam.

16. The method described in claim 1 wherein the detecting step includes the step of guiding the reflected laser beam into an optical detection system.

17. The method described in claim 1 including the additional step of illuminating the active region through the back side of the semiconductor with a light source.

18. The method described in claim 17 wherein the light source is the laser beam, wherein the step of illuminating the active region includes the step of rastering the laser beam across the active region.

19. The method described in claim 18 wherein the optical detection system is a confocal based optical system.

20. The method described in claim 1 including the additional step of monitoring the active region through the back side of the semiconductor with a camera coupled to a video monitor.

21. A device for detecting an electric field in an integrated circuit, comprising:

a laser configured to provide a laser beam at a wavelength near a band gap of a semiconductor of the integrated circuit;

an objective lens positioned in front of the laser so as to focus the laser beam on an active region of the integrated circuit through a back side of the semiconductor;

a beam splitter positioned between the laser and the objective lens; and

,

a detector positioned to detect a reflected laser beam reflected from the active region through a back side of the semiconductor, through the objective lens and through the beam splitter, the detector configured to detect an amplitude modulation of the reflected laser beam wherein the amplitude modulation is attributable to the electric field at the active region.

22. The device described in claim 21 wherein the amplitude modulation is further attributable to photo-absorption and reflectance modulation of the laser beam in the active region.

23. The device described in claim 21 further comprising an optical isolator positioned between the laser beam and the beam splitter.

24. The device described in claim 23 wherein the beam splitter is a polarizing beam splitter, the device further comprising a λ

/2 half wave plate and λ

/4 quarter wave plate, the polarizing beam splitter positioned between the λ

/2 half wave plate and the λ

/4 quarter wave plate.

25. The device described in claim 21 further comprising an illumination source configured to illuminate the active region.

26. The device described in claim 25 wherein the laser is the illumination source.

27. The device described in claim 25 wherein the illumination source illuminates the active region through an infrared filter, a collimating lens, another beam splitter, a dichroic beam splitter and the objective lens.

28. The device described in claim 27 further comprising an infrared camera configured to monitor the active region through the objective lens, the dichroic beam splitter, the other beam splitter and a first focusing lens.

29. The device described in claim 21 wherein the detector comprises an aperture configured to guide the reflected laser beam onto a second focusing lens, the second focusing lens configured to focus the reflected laser beam onto a photo diode, the photo diode coupled to