Microelectronic structures including semiconductor islands
First Claim
1. A microelectronic structure comprising:
- a substrate;
a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite said substrate;
a filler material on said substrate and surrounding said semiconductor island, said filler material comprising a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a smooth planar surface;
a microelectronic circuit on said filler material adjacent said semiconductor island; and
a layer of a piezoelectric material on said semicondcutor island;
wherein said first semiconductor material comprises diamond.
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Accused Products
Abstract
A microelectronic structure includes a substrate, a semiconductor island on the substrate, and a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a layer of a second semiconductor material having a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be provided on the filler material.
55 Citations
34 Claims
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1. A microelectronic structure comprising:
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a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite said substrate; a filler material on said substrate and surrounding said semiconductor island, said filler material comprising a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a smooth planar surface; a microelectronic circuit on said filler material adjacent said semiconductor island; and a layer of a piezoelectric material on said semicondcutor island; wherein said first semiconductor material comprises diamond. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A microelectronic structure comprising:
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a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material; a filler material on said substrate and surrounding said semiconductor island wherein said filler material is different from said first semiconductor material; a microelectronic circuit on said filler material adjacent said semiconductor island; and a piezoelectric layer on said semiconductor island; wherein said semiconductor island has a planar island surface opposite said substrate and wherein said filler material has a planar filler surface adjacent said planar island semiconductor surface opposite said substrate; and wherein said first planar semiconductor surface and said second planar surface together define a smooth planar surface. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A piezoelectric structure comprising:
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a substrate; a plurality of semiconductor islands on said substrate, each of said semiconductor islands comprising a first semiconductor material, wherein an interfacial surface of each of said semiconductor islands is adjacent said substrate and a growth surface of each of said islands is opposite said substrate; a filler material on said substrate and surrounding each of said semiconductor islands wherein said filler material comprises a material different from said first semiconductor material; a piezoelectric layer on at least one of said semiconductor islands wherein at least a portion of said filler material is not covered by said piezoelectric layer; and a microelectronic circuit on said portion of said filler material not covered by said piezoelectric layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification