Method of making tunable thin film acoustic resonators

• US 5,873,153 A
• Filed: 08/27/1996
• Issued: 02/23/1999
• Est. Priority Date: 12/21/1993
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Ruby, Richard C., Merchant, Paul Philip
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US08/703,716
• Time in Patent Office: 910 Days
• Field of Search: 29/25.35, 427/100, 310/324, 310/328, 310/331, 310/332
• US Class Current: 29/25.35
• CPC Class Codes: H03H 2009/02181 by application of heat from a heat source
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/02133 of stress
• CPC Class Codes: H03H 9/02236 of surface skimming bulk wave devices
• CPC Class Codes: H03H 9/174 Membranes
• CPC Class Codes: H03H 9/583 comprising a plurality of piezoelectric layers acoustically coupled
• CPC Class Codes: H03H 9/588 Membranes
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si₃ N₄ membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

Claims

1. A method for fabricating an acoustical resonator, the method comprising:

depositing a sacrificial layer on a substrate;

etching vias in said sacrificial layer;

depositing metal in said vias;

depositing a bottom metallic layer on said sacrificial layer;

depositing a PZ layer on said bottom metallic layer;

depositing a top metallic layer on said PZ layer; and

removing said sacrificial layer leaving a portion of said bottom metallic layer separated from said substrate.

2. The method of claim 1 wherein said PZ layer comprises AlN.

3. The method of claim 1 wherein either said bottom or said top metallic layers comprise a metal chosen from the group consisting of Mo, Ti, and W.

4. The method of claim 1, wherein the deposition conditions used in the deposition of at least one of said metallic layers are determined by measuring the deflection of a test substrate after a metallic layer is deposited thereon using said deposition conditions.

5. The method of claim 1, wherein said sacrificial layer comprises silicon and oxygen.

6. The method of claim 5, wherein said sacrificial layer comprises silicon oxide.

7. The method of claim 1, wherein at least one of said bottom and said top metallic layers comprises Mo.

8. The method of claim 4, wherein said test substrate comprises silicon.

9. The method of claim 4, wherein said deposition conditions are set to deposit said at least one of said metallic layers as a low-stress metallic layer.

10. The method of claim 9, wherein said deposition conditions determined by measuring include pressure.

11. The method of claim 4, additionally comprising setting said deposition conditions used in the deposition of said at least one of said metallic layers to deposit said at least one of said metallic layers as a low-stress metallic layer.

12. The method of claim 11, wherein said deposition conditions include pressure.