Method for fabricating a resonator having an acoustic mirror

• US 5,873,154 A
• Filed: 10/17/1996
• Issued: 02/23/1999
• Est. Priority Date: 10/17/1996
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Nokia Mobile Phones UK Limited (Nokia Corporation)
• Inventors: Partanen, Meeri Talvilelei, Ylilammi, Markku Antero
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US08/733,177
• Time in Patent Office: 859 Days
• Field of Search: 29/25.35, 427/100, 310/324, 310/310, 310/326, 310/334
• US Class Current: 29/25.35
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A Thin Film Bulk Acoustic Wave Resonator (FBAR), comprising a top electrode layer, a substrate, an acoustic mirror that is formed atop the substrate, and a piezoelectric layer that is formed between the top electrode layer and the acoustic mirror. The acoustic mirror is comprised of a plurality of stacked layers. One of the stacked layers forms a bottom electrode layer. At least another one of the stacked layers comprises a polymer material. The piezoelectric produces vibrations in response to a voltage being applied between the top electrode and the bottom electrode. The acoustic mirror acoustically isolates these vibrations from the substrate. The polymer material is preferably an electronic grade polymer and has a capability of withstanding a deposition of the piezoelectric layer at an elevated temperature. The layers forming the acoustic mirror which do not comprise the polymer material comprise a high acoustic impedance material such as, by example, tungsten (W). The polymer material can be spun on the substrate during fabrication of the FBAR.

Claims

1. A method for fabricating a Thin Film Bulk Acoustic Wave Resonator (FBAR), comprising the steps of:

STEP A1;

forming a first layer on a substrate, the first layer being comprised of a polymer;

STEP A2;

forming a second, lower electrode layer on an upper surface of the first layer, wherein the first and second layers form an acoustic isolator and wherein STEP A1 includes forming the first layer so as to have a thickness which is an odd multiple of one-fourth of an acoustic wavelength, and wherein STEP A2 includes forming the second layer so as to have a thickness which is an odd multiple of one-fourth of the acoustic wavelength;

STEP B;

forming a piezoelectric layer on the acoustic isolator; and

STEP C;

forming an upper electrode layer on the piezoelectric layer.

2. A method as set forth in claim 1, wherein STEP B includes a step of depositing a piezoelectric material at an elevated temperature on at least a portion of the acoustic isolator to form the piezoelectric layer.

3. A method as set forth in claim 1, wherein STEP A1 includes a step of spinning the polymer on the substrate to form the first layer.

4. A method as set forth in claim 1, wherein the polymer can withstand a temperature reached during the performance of STEP B without being detrimentally effected.

5. An FBAR as set forth in claim 1, wherein the second, electrode layer comprises a material having a high characteristic acoustic impedance.

6. A method as set forth in claim 5, wherein the material having the high characteristic acoustic impedance is comprised of tungsten.

7. A method as set forth in claim 1, wherein the polymer is an electronic grade polymer.

8. A method as set forth claim 1, wherein the polymer comprises a polyimide.

9. A method as set forth claim 1, wherein the polymer comprises one of cyclotene, a silicon-based polymer material, and a carbon-based material.

10. A method as set forth claim 1, wherein STEP A1 includes forming the first layer so as to have a thickness that is a function of a desired operating frequency.

11. A method as set forth claim 1, wherein the substrate comprises one of glass, silicon, and gallium arsenide.

12. A method as set forth claim 1, wherein the first layer has an acoustic impedance which is substantially less than an acoustic impedance of the second, electrode layer.

13. A method as set forth claim 1, wherein the acoustic isolator isolates vibrations produced by said piezoelectric layer from said substrate.

14. A method as set forth claim 1, wherein the acoustic isolator transforms an acoustic impedance of said substrate from a first acoustic impedance to a second, lesser acoustic impedance.

15. A method for fabricating a Thin Film Bulk Acoustic Wave Resonator (FBAR), comprising the steps of:

forming a multi-layered acoustic isolator on a surface of a substrate, wherein a first plurality of layers of the acoustic isolator are comprised of a polymer having a first acoustic impedance, wherein a second plurality of layers of the acoustic isolator have a second acoustic impedance, wherein individual ones of the first plurality of layers and individual ones of the second plurality of layers are alternately disposed within the acoustic isolator, wherein one of the first plurality of layers is disposed on the substrate, and wherein one of second plurality of layers forms a lower electrode layer and is disposed on one of the first plurality of layers;

forming a piezoelectric layer on the acoustic isolator; and

forming an upper electrode layer on the piezoelectric layer.

16. A method as set forth in claim 15, wherein the first acoustic impedance is less than the second acoustic impedance.

17. A method as set forth in claim 15, wherein at least one of the second plurality of layers comprises tungsten.

18. A method as set forth in claim 15, wherein the polymer is comprised of an electronic grade polymer.

19. A method as set forth claim 15, wherein the polymer comprises one of a polyimide, cyclotene, a silicon-based polymer material, and a carbon-based material.

20. A method as set forth claim 15, wherein the acoustic isolator isolates the substrate from vibrations produced by said piezoelectric layer.

21. A method as set forth claim 15, wherein the acoustic isolator transforms an acoustic impedance of said substrate from a first acoustic impedance to a second, lesser acoustic impedance.

22. A method as set forth in claim 15, wherein individual ones of the first plurality of layers are spun on.