Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps

• US 5,873,942 A
• Filed: 08/06/1997
• Issued: 02/23/1999
• Est. Priority Date: 08/08/1996
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Young Sun, Kim, Jung Ki, Park, Jun Sig
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/906,879
• Time in Patent Office: 566 Days
• Field of Search: 118/715, 118/719, 204/298.07, 204/298.25, 204/298.35, 156/345, 417/205, 417/248, 417/306, 417/427, 417/441, 417/63
• US Class Current: 118/719
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: Y10S 438/908 Utilizing cluster apparatus
• CPC Class Codes: Y10S 438/909 Controlled atmosphere
• CPC Class Codes: Y10S 438/935 Gas flow control

Abstract

An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction chambers, a group of gate valves connected to the high-vacuum pumps, and a low-vacuum pump connected to the gate valves. There are fewer gate valves than high-vacuum pumps. A method for fabricating a semiconductor device using the above apparatus includes the sequence and duration of opening gate valves, injecting reaction gases, and pumping with the low vacuum pump. According to the present invention, since the number of pumps is reduced, the cost for installation, operation and maintenance of the semiconductor device fabrication apparatus is reduced.

Claims

1. An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising:

a first group of reaction chambers connected to a wafer transfer chamber;

a second group of high-vacuum pumps connected to said reaction chambers;

a third group of gate valves connected to said high-vacuum pumps; and

a low-vacuum pump connected to said gate valves,

wherein said third group has fewer members than said second group.

2. The apparatus of claim 1, wherein each high-vacuum pump of said second group being connected to a single reaction chamber of said first group.

3. The apparatus of claim 2, wherein said third group having the same number. of members as said first group, and wherein each gate valve of said third group communicating with corresponding ones of said reaction chambers of said first group, said each gate valve being connected to those of said high-vacuum pumps which are connected to said corresponding reaction chamber.

4. The apparatus of claim 3, further comprising an automatic pressure controller connected to said gate valves and said reaction chambers.

5. The apparatus of claim 1, wherein said high-vacuum pumps maintain the internal pressure of each reaction chamber of said first group in the range from about 10^-4 Torr to about 10^-4 Torr.

6. The apparatus of claim 1, wherein said high-vacuum pumps are turbo pumps.

7. The apparatus of claim 1, wherein said high-vacuum pumps are ion pumps.

8. The apparatus of claim 1, wherein said low-vacuum pump maintains the internal pressure of each reaction chamber of said first group in the range from about 10^-1 Torr to about 10^-4 Torr.

9. The apparatus of claim 1, wherein said low-vacuum pump is a dry pump.

10. An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device, said apparatus comprising:

a first group of reaction chambers connected to a wafer transfer chamber;

a second group of high-vacuum pumps connected to said reaction chambers; and

a low-vacuum pump in direct communication with said high-vacuum pumps.

11. The apparatus of claim 10, wherein said high-vacuum pumps maintain the internal pressure of each reaction chamber of said first group in the range from about 10^-4 Torr to about 10^-10 Torr.

12. The apparatus of claim 10, wherein said high-vacuum pumps are turbo pumps.

13. The apparatus of claim 10, wherein said high-vacuum pumps are ion pumps.

14. The apparatus of claim 10, wherein said low-vacuum pump maintains the internal pressure of each reaction chamber of said first group in the range from about 10^-1 Torr to about 10^-4 Torr.

15. The apparatus of claim 10, wherein said low-vacuum pump is a dry pump.