Laser-induced etching of multilayer materials

• US 5,874,011 A
• Filed: 08/01/1996
• Issued: 02/23/1999
• Est. Priority Date: 08/01/1996
• Status: Expired due to Term

• Current Assignee: FEI Company (Thermo Fisher Scientific Incorporated)
• Original Assignee: Revise, Inc. (Thermo Fisher Scientific Incorporated)
• Inventors: Ehrlich, Daniel
• Primary Examiner(s): McCamish, Marion
• Assistant Examiner(s): JUSKA, CHERYL ANN
• Application Number:
  US08/691,147
• Time in Patent Office: 936 Days
• Field of Search: 216/65, 216/63, 216/72, 216/75, 216/76, 216/77, 216/74, 29/603.01
• US Class Current: 216/65
• CPC Class Codes: C23F 4/02 by evaporation
• CPC Class Codes: H01L 21/76894 using a laser, e.g. laser cutting, laser direct writing, laser repair

Abstract

Techniques and apparatus for the laser induced etching of a reactive material, or of a multilayer substrate or wafer comprising layers of materials of different etching characteristics and reactivities, are disclosed. Short wavelength laser radiation and control of the process ambient equalize etch rates of the layers of a multilayer substrate or wafer and allow high-resolution etching. A suppressant gas introduced into a halogen-containing ambient suppresses explosive reactions between the ambient and reactive materials or layers. For less reactive layers or materials, reduced-pressure air is a suitable ambient. The techniques and apparatus disclosed herein are particularly useful in the manufacture of magnetic data transfer heads.

Claims

1. A method of etching a multilayer structure in a laser-induced, reactive halogen etching ambient, the method comprising:

disposing a multilayer structure, comprising at least a ceramic layer and a metallic layer deposited upon the ceramic layer, said ceramic and metal layers formed of materials having different etching characteristics, in a controlled environment chamber,

introducing a reactive halogen-containing gas into the chamber;

introducing a suppressant gas into the chamber, the suppressant gas chosen for its ability to reduce the difference in etch rates of the ceramic and metallic layers when the multilayer structure is exposed to the reactive halogen-containing gas;

selecting a wavelength of laser radiation within the range from about 550 nm to about 190 nm to further reduce the difference in etch rates of the ceramic and metallic layers during laser induced halogen etching; and

irradiating selected portions of the multilayer structure with the selected wavelength of laser radiation to induce reactive halogen etching of at least a portion of the ceramic and metallic layers.

2. The method of claim 1 wherein the step of disposing the multilayer structure in a controlled environment chamber further comprises maintaining the pressure in the chamber at a pressure below atmospheric pressure.

3. The method of claim 1 wherein the step of introducing a reactive halogen-containing gas into the chamber further comprises introducing HCl vapor into the chamber as the reactive halogen-containing gas.

4. The method of claim 1 wherein the step of introducing a reactive halogen-containing gas into the chamber further comprises introducing chloride as the reactive halogen-containing gas.

5. The method of claim 1 wherein the step of introducing a suppressant gas into the chamber further comprises introducing oxygen as a suppressant gas into the chamber.

6. The method of claim 1 wherein the step of introducing a suppressant gas into the chamber further comprises introducing water vapor as a suppressant gas into the chamber.

7. The method of claim 1 wherein the step of introducing a suppressant gas into the chamber further comprises introducing nitrogen as a suppressant gas into the chamber.

8. A method of etching multilayer structure in laser-induced, reactive halogen etching ambient, the method comprising:

disposing a multilayer structure, comprising at least a ceramic layer and metallic layer of materials having different etching characteristics, in a controlled environment chamber, said multilayer structure comprising at least a ceramic layer and a metallic layer, the metallic layer further comprising at least one material selected from the group consisting of iron, cobalt, nickel, and alloys thereof;

introducing a reactive halogen-containing gas into the chamber;

introducing a suppressant gas into the chamber, the suppressant gas chosen for its ability to reduce the difference in etch rates of the ceramic and metallic layers when the multilayer structure is exposed to the reactive halogen-containing gas;

selecting a wavelength of laser radiation within the range from about 550 nm to about 190 nm to further reduce the difference in etch rates of the ceramic and metallic layers during laser induced halogen etching; and

irradiating selected portions of the multilayer structure with the selected wavelength of laser radiation to induce reactive halogen etching of at least a portion of the ceramic and metallic layers.