Method for forming vias in a dielectric film

• US 5,874,369 A
• Filed: 12/05/1996
• Issued: 02/23/1999
• Est. Priority Date: 12/05/1996
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: LaPlante, Mark Joseph, Farooq, Mukta Shaji
• Primary Examiner(s): JONES, DEBORAH D
• Application Number:
  US08/761,028
• Time in Patent Office: 810 Days
• Field of Search: 438/707, 438/743, 438/744, 438/940, 361/321.3, 361/321.4, 361/322
• US Class Current: 438/707
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material

Abstract

Vias are formed in a dielectric film overlying an electrode layer by sweeping a laser beam over the area in which the via is to be formed. In particular, a Nd:YAG laser, producing a beam of light having a 266 nm wave length, effectively ablates a barium strontium titanate dielectric film, without adversely affecting an underlying platinum electrode. The present invention overcomes the problem of wet chemical etching of dielectric films to form vias. Wet chemical etching often requires etchants that adversely affect the underlying metal electrode and typically require the use of environmentally undesirable chemicals.

Claims

1. A method for forming vias in a dielectric film, comprising:

forming an electrode layer on a prepared substrate, said electrode layer being formed of an electrically conductive material having relatively low light energy absorption characteristics with respect to a laser beam;

depositing a dielectric layer on said electrode layer, said dielectric layer being formed of a material having a relatively high dielectric constant and relatively high light energy absorption characteristics with respect to said laser beam; and

ablating areas of said dielectric layer by directing said laser beam on said areas whereby said dielectric material is removed from said areas of the dielectric layer without adversely affecting the underlying electrode layer.

2. A method for forming vias in a dielectric film, as set forth in claim 1, wherein said forming an electrode layer includes depositing a solid layer of said electrically conductive material on said substrate, and patterning said solid layer of electrically conductive material by removing areas of said electrically conductive material whereby the remaining electrically conductive material defines discrete electrical circuit features.

3. A method for forming vias in a dielectric film, as set forth in claim 1, wherein said electrically conductive material forming said electrode layer is platinum.

4. A method for forming vias in a dielectric film, as set forth in claim 1, wherein said material having a relatively high dielectric constant and light energy absorption characteristics is barium strontium titanate.

5. A method for forming vias in a dielectric film, as set forth in claim 1, wherein said laser beam is the fourth harmonic of the fundamental wavelength emitted from a neodymium doped yttrium-aluminum-garnet laser and has a wavelength of about 266 nm, a cross sectional area of about 3 μ

m, a fluence of from about 100 mJ/cm² to about 300 mJ/cm², and a pulse repetition rate of about 1 kHz , and said ablating areas of said dielectric layer includes sweeping said laser beam across the areas of the dielectric layer at a rate of about 0.3 mm/s.

6. A method for forming vias in a dielectric film, comprising:

forming an electrode layer on a prepared substrate, said electrode layer being formed of platinum;

depositing a dielectric layer on said electrode layer, said dielectric layer being formed of barium strontium titanate; and

ablating areas of said dielectric layer by directing a beam of light energy emitted from a quadrupled yttrium-aluminum-garnet laser on said areas whereby said barium strontium titanate is removed from the areas of the dielectric layer without adversely affecting the underlying platinum material in the electrode layer.

7. A method for forming vias in a dielectric film, as set forth in claim 6, wherein beam of light energy emitted from said quadrupled yttrium-aluminum-garnet laser has a wavelength of about 266 nm, a cross sectional area of about 3 μ

m, a fluence of from about 100 mJ/cm² to about 300 mJ/cm², and a pulse repetition rate of about 1 kHz , and said ablating areas of said dielectric layer includes sweeping said beam of light energy across the preselected areas of the dielectric layer at a rate of about 0.3 mm/s.