Wideband vibration sensor

• US 5,874,675 A
• Filed: 03/20/1997
• Issued: 02/23/1999
• Est. Priority Date: 03/20/1997
• Status: Expired due to Term

• Current Assignee: Inter Science GmbH
• Original Assignee: Inter Science GmbH
• Inventors: Cormeau, Christopher, Edmans, Daniel M., Maby, Edward, Gutierrez, Adolfo
• Primary Examiner(s): Williams, Hezron
• Assistant Examiner(s): MILLER, ROSE MARY
• Application Number:
  US08/821,042
• Time in Patent Office: 705 Days
• Field of Search: 73/514.01, 73/514.16, 73/514.17, 73/514.18, 73/514.21, 73/514.29, 73/514.36, 73/DIG. 1, 73/654, 73/649
• US Class Current: 73/514.21
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means

Abstract

This invention relates to an apparatus for making highly sensitive measurements of acceleration. The vibration sensor includes the use of a movable gate field effect transistor to sense the motion of a cantilever beam with respect to its base, it also includes an actuator element formed by a pair of electrodes actuating electrostatically on the beam. A feedback control loop is also included for force balance operation resulting in a very wide dynamic range for the sensor.

Claims

1. A wideband vibration sensor, comprising:

a suspended mass further comprising a gate region proximate an area of large displacement amplitude of said suspended mass;

a movable gate transistor further comprising a channel of said movable gate transistor; and

a control module;

wherein;

vibrations to be detected alter a kinetic relationship between said gate region and said channel;

the alteration of said kinetic relationship modulates a current flow through the transistor;

the modulated current flow from the transistor is sensed using current flow sensing means, to deduce the kinetics of the suspended mass and hence of said vibrations; and

based on the sensing of said modulated current flow, said control module controls the imposition of an opposing displacement force on said suspended mass by applying negative feedback control.

2. The sensor of claim 1, said transistor further comprising a source and a drain;

wherein;

a bias voltage is applied between said source and said drain; and

said modulated flow is generated from said drain, by applying a bias voltage to said gate region such that vibratory perturbations of said gate region toward and away from said channel, cause the current flow to modulate high and low respectively.

3. The sensor of claim 1, further comprising at least one pair of feedback electrodes comprising an upper feedback electrode above and a lower feedback electrode below said suspended mass;

wherein said opposing displacement force is imposed on said suspended mass by;

lower voltage application means applying a voltage to the lower feedback control electrode to attract the suspended mass toward said channel, when said modulated current flow is sensed to reach a position of increased distance between said suspended mass and said channel; and

upper voltage application means applying a voltage to the upper feedback control electrode to attract the suspended mass away from said channel, when said modulated current flow is sensed to reach a position of decreased distance between said suspended mass and said channel.

4. The sensor of claim 3, wherein said imposition of said opposing displacement force on said suspended mass by applying negative feedback control comprises imposition of force balanced feedback control, wherein the voltage applied to said upper feedback control electrode and said lower feedback control electrode are such that said suspended mass remains substantially stationary in an equilibrium position, thereby increasing the natural frequency of said suspended mass and enabling greater sensitivity and greater maximum signal range at high vibration frequencies.

5. The sensor of claim 4 wherein said suspended mass is a cantilever beam.

6. The sensor of claim 4, wherein said sensor is embodied in an integrated microchip unit.

7. The sensor of claim 3 wherein said suspended mass is a cantilever beam.

8. The sensor of claim 3, wherein said sensor is embodied in an integrated microchip unit.

9. The sensor of claim 1 wherein said suspended mass is a cantilever beam.

10. The sensor of claim 1, wherein the position d of the gate region of said suspended mass, relative to its unperturbed position, is deduced as a function, f, of the modulated current flow i_sd at time t by the relationship d=f(i_sd (t)).

11. The sensor of claim 1, wherein the velocity v of the gate region of said suspended mass relative to its unperturbed velocity is deduced as a function, g, of the modulated current flow i_sd with respect to time t by the relationship v=g(i_sd, di_sd /dt).

12. The sensor of claim 1, wherein the acceleration a of the gate region of said suspended mass relative to its unperturbed acceleration is deduced as a function, h, of the modulated current flow i_sd with respect to time t by the relationship a=h (i_sd, di_sd /dt, d² i_sd /dt²).

13. The sensor of claim 1, wherein said imposition of said opposing displacement force on said suspended mass by applying negative feedback control comprises imposition of force balanced feedback control, thereby increasing the natural frequency of said suspended mass and enabling greater sensitivity and greater maximum signal range at high vibration frequencies.

14. The sensor of claim 13 wherein said suspended mass is a cantilever beam.

15. The sensor of claim 13, wherein said sensor is embodied in an integrated microchip unit.

16. The sensor of claim 1, wherein said sensor is embodied in an integrated microchip unit.

17. A method for sensing vibrations comprising:

using said vibrations to alter a kinetic relationship between a gate region proximate an area of large displacement amplitude of a suspended mass and a channel of a movable gate transistor;

modulating a current flow from the transistor based upon the alteration of said kinetic relationship;

sensing the modulated current flow;

deducing the kinetics of the suspended mass and hence of said vibrations from so-sensing said modulated current flow; and

based on so-sensing said modulated current flow, using a control module to control the imposition of an opposing displacement force on said suspended mass by applying negative feedback control.

18. The method of claim 17, further comprising:

applying a voltage drop between a source and a drain of said transistor; and

generating said modulated current output from said drain, by applying a voltage bias to said gate region such that vibratory perturbations of said gate region toward and away from said channel, cause current flow to modulate high and low, respectively.

19. The method of claim 17, further comprising imposing said opposing displacement force on said suspended mass by:

applying a voltage to a lower feedback electrode of at least one electrode pair, thereby attracting the suspended mass toward said channel, when said modulated current flow reaches a position of increased distance between said suspended mass and said channel; and

applying a voltage to an upper feedback electrode of said at least one electrode pair to attract the suspended mass away from said base channel, when said modulated current output reaches a position of decreased distance between said suspended mass and said channel.

20. The method of claim 19, wherein controlling said imposition of said opposing displacement force on said suspended mass by applying negative feedback control with a control module comprises controlling an imposition of force balanced feedback control by applying voltages to said upper feedback control electrode and said lower feedback control electrode such that said suspended mass remains substantially stationary in an equilibrium position, thereby increasing the natural frequency of said suspended mass and enabling greater sensitivity and greater maximum signal range at high vibration frequencies.

21. The method of claim 20, wherein said suspended mass is a cantilever beam.

22. The method of claim 20, further comprising embodying said sensor in an integrated microchip unit.

23. The method of claim 19, wherein said suspended mass is a cantilever beam.

24. The method of claim 19, further comprising embodying said sensor in an integrated microchip unit.

25. The method of claim 17, wherein said suspended mass is a cantilever beam.

26. The method of claim 17, further comprising deducing the position d of the gate region of said suspended mass relative to its unperturbed position as a function, f, of the modulated current flow i_sd at time t by the relationship d=f(i_sd (t)).

27. The method of claim 17, further comprising deducing the velocity v of the gate region of said suspended mass relative to its unperturbed velocity as a function, g, of the modulated current flow i_sd with respect to time t by the relationship v=g(i_sd, di_sd /dt).

28. The method of claim 17, further comprising deducing the acceleration of the gate region of said suspended mass relative to its unperturbed acceleration as a function, h, of the modulated current flow i_sd with respect to time t by the relationship a=h(i_sd, di_sd /dt, d² i_sd /dt²).

29. The method of claim 17, wherein controlling said imposition of said opposing displacement force on said suspended mass by applying negative feedback control with a control module comprises controlling an imposition of force balanced feedback control, thereby increasing the natural frequency of said suspended mass and enabling greater sensitivity and greater maximum signal range at high vibration frequencies.

30. The method of claim 29, wherein said suspended mass is a cantilever beam.

31. The method of claim 29, further comprising embodying said sensor in an integrated microchip unit.

32. The method of claim 17, further comprising embodying said sensor in an integrated microchip unit.

33. A method for increasing the high-frequency sensitivity and maximum signal range of an electro-mechanical vibration sensor, comprising:

controlling the imposition of an opposing displacement force on a suspended mass used as a mechanical vibration sensing element in said sensor, using a control module applying negative feedback control, based on sensing the vibration of the mass.

34. The method of claim 33, further comprising so-imposing said opposing displacement force on said suspended mass by applying voltages to upper and lower feedback electrodes of at least one electrode pair.