Oxide layer patterned by vapor phase etching

• US 5,876,879 A
• Filed: 05/29/1997
• Issued: 03/02/1999
• Est. Priority Date: 05/29/1997
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Natzle, Wesley C., Kleinhenz, Richard L., Yu, Chienfan
• Primary Examiner(s): Rosasco, S.
• Application Number:
  US08/865,258
• Time in Patent Office: 642 Days
• Field of Search: 430/5, 430/9, 430/311, 430/313, 216/43, 216/62
• US Class Current: 430/5
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

Claims

1. A patterned substrate for integrated circuits, comprising:

a substrate having a surface;

an oxide layer that is 200 Å

or less in thickness positioned on said surface, said oxide layer having an opening therein which exposes a region on said surface, said opening having a dimension of less than 1800 Å

wide;

a patterned mask layer positioned over said oxide layer having an opening over said opening in said oxide layer, said opening in said mask being larger than said opening in said oxide.

2. The patterned substrate of claim 1 wherein said opening has side walls which are diagonally sloped from said surface of said substrate to a surface of said oxide layer.

3. The patterned substrate of claim 1 wherein said opening has a dimension of 10 Å

to 1000 Å

.

4. A patterned substrate for integrated circuits, comprising:

a substrate having a first surface; and

an oxide layer positioned on said first surface of said substrate, said oxide layer having a second surface in contact with said first surface of said substrate and a third surface spaced from said second surface by a thickness dimension of said oxide layer, said oxide layer having an opening which extends through said thickness dimension and exposes a region of said substrate at said first surface, said opening being formed by etching with hydrogen fluoride and ammonia under conditions where said opening has a first opening dimension at said third surface and a second opening dimension at said second surface wherein said first opening dimension is larger than said second opening dimension.

5. The patterned substrate of claim 4 wherein said opening has side walls which are diagonally sloped from said surface of said substrate to a surface of said oxide layer.

6. A patterned substrate for integrated circuits, comprising:

a substrate having a first surface;

an oxide layer positioned on said first surface of said substrate, said oxide layer having a second surface spaced from said first surfaces of said substrate by a thickness of said oxide layer, said oxide layer having an opening which extends through said thickness of said oxide layer to said first surface of said substrate, said opening in said oxide layer has a first width dimension at said surface of said substrate; and

a mask positioned on said second surface, said mask having a second opening which is aligned with said first opening in said oxide layer, said opening in said oxide layer being formed through said second opening in said mask by etching with hydrogen fluoride and ammonia under conditions where said second opening in said mask has a second width dimension that is larger than said first width dimension in said oxide layer at said surface of said substrate.

7. The patterned substrate of claim 6 wherein said mask is an organic photoresist.

8. The patterned substrate of claim 6 wherein said thickness of said oxide layer is 200 Å

or less.

9. The patterned substrate of claim 6 wherein said first width dimension is less than 1800 Å

.

10. A patterned substrate for integrated circuits, comprising:

a substrate having a surface; and

an oxide layer having a top surface and a bottom surface that is 200 Å

or less in thickness, said bottom surface of said oxide layer being positioned on said surface of said substrate, said oxide layer having at least one opening which extends from said top surface to said bottom surface and exposes said surface of said substrate, said opening having a first dimension at said top surface and a second dimension at said bottom surface wherein said first dimension is larger than said second dimension.