Ultra-short channel recessed gate MOSFET with a buried contact
First Claim
1. A method of forming a transistor in a semiconductor substrate, said semiconductor substrate having an isolation region, said method comprising the steps of:
- forming a pad insulator layer over said semiconductor substrate;
forming a stacked layer stacked over said pad insulator layer;
removing a portion of said stacked layer for having an gate insulator space in said stacked layer to said pad insulator layer;
forming a gate insulator within said gate insulator space over said semiconductor substrate;
doping a lightly doped region with a first concentration of a first dopant type in said semiconductor substrate uncovered by said gate insulator and said isolation region;
removing said stacked layer and said pad insulator layer;
forming a semiconductor layer over said semiconductor substrate;
removing a portion of said semiconductor layer over said gate insulator to define a space over said gate insulator;
forming spacer structure in said space on a sidewall portion of said semiconductor layer;
removing a portion of said gate insulator for having a gate space over said semiconductor substrate;
doping an anti punchthrough region in said semiconductor substrate under said gate space with a second concentration of a second dopant type;
forming a first insulator layer on said semiconductor substrate under said gate space and on said semiconductor layer;
forming a gate filling to fill within said gate space;
removing a portion of said first insulator layer which is uncovered by said gate filling;
doping a plurality of junction ions with a third concentration of a third dopant type into said semiconductor layer;
forming a second insulator layer over said semiconductor substrate;
performing a thermal process to said semiconductor substrate; and
performing a metalization process on said semiconductor substrate.
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Accused Products
Abstract
Following with the formation of pad insulator layer and a stacked layer stacked, a gate insulator is formed within the defined gate insulator space. A lightly doped region is doped and the stacked layer and the pad insulator layer is removed. A semiconductor layer is formed and a gate space is defined over the gate insulator through a spacer structure. An anti punchthrough region is formed followed by the formation of a first insulator layer. A gate filling is then formed to fill within the gate space. A portion of the first insulator layer is then removed. A step of doping a plurality of junction ions is applied. A second insulator layer is formed and a thermal process is then proceeded. Finally a metalization process is employed on the semiconductor substrate.
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Citations
36 Claims
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1. A method of forming a transistor in a semiconductor substrate, said semiconductor substrate having an isolation region, said method comprising the steps of:
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forming a pad insulator layer over said semiconductor substrate; forming a stacked layer stacked over said pad insulator layer; removing a portion of said stacked layer for having an gate insulator space in said stacked layer to said pad insulator layer; forming a gate insulator within said gate insulator space over said semiconductor substrate; doping a lightly doped region with a first concentration of a first dopant type in said semiconductor substrate uncovered by said gate insulator and said isolation region; removing said stacked layer and said pad insulator layer; forming a semiconductor layer over said semiconductor substrate; removing a portion of said semiconductor layer over said gate insulator to define a space over said gate insulator; forming spacer structure in said space on a sidewall portion of said semiconductor layer; removing a portion of said gate insulator for having a gate space over said semiconductor substrate; doping an anti punchthrough region in said semiconductor substrate under said gate space with a second concentration of a second dopant type; forming a first insulator layer on said semiconductor substrate under said gate space and on said semiconductor layer; forming a gate filling to fill within said gate space; removing a portion of said first insulator layer which is uncovered by said gate filling; doping a plurality of junction ions with a third concentration of a third dopant type into said semiconductor layer; forming a second insulator layer over said semiconductor substrate; performing a thermal process to said semiconductor substrate; and performing a metalization process on said semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a transistor in a semiconductor substrate, said semiconductor substrate having an isolation region, said method comprising the steps of:
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forming a pad insulator layer over said semiconductor substrate; forming a stacked layer stacked over said pad insulator layer; removing a portion of said stacked layer for having an oxide insulator space in said stacked layer to said pad insulator layer; forming an oxide insulator within said oxide insulator space over said semiconductor substrate; doping a lightly doped region with a first concentration of a first dopant type in said semiconductor substrate uncovered by said oxide insulator and said isolation region; removing said stacked layer and said pad insulator layer; forming a silicon layer over said semiconductor substrate; removing a portion of said silicon layer over said oxide insulator to define a space over said oxide insulator; forming spacer structure in said space on a side wall portion of said silicon layer; removing a portion of said oxide insulator for having a gate space over said semiconductor substrate; doping an anti punchthrough region in said semiconductor substrate under said gate space with a second concentration of a second dopant type; forming a first insulator layer on said semiconductor substrate under said gate space and on said silicon layer; forming a gate filling to fill within said gate space; removing a portion of said first insulator layer which is uncovered by said gate filling; doping a plurality of junction ions with a third concentration of a third dopant type into said silicon layer; forming a second insulator layer over said semiconductor substrate; performing a thermal process to said semiconductor substrate; and performing a metalization process on said semiconductor substrate for forming a set of connections to said silicon layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification