Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation

  • US 5,877,530 A
  • Filed: 07/31/1996
  • Issued: 03/02/1999
  • Est. Priority Date: 07/31/1996
  • Status: Expired due to Term
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