Semiconductor chemical sensor device and method of forming a thermocouple for a semiconductor chemical sensor device

• US 5,879,630 A
• Filed: 02/13/1997
• Issued: 03/09/1999
• Est. Priority Date: 03/04/1996
• Status: Expired due to Term

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Lorenzo, Alexandra, Scheid, Emmanual, Lescouzeres, Lionel
• Primary Examiner(s): Soderquist, Arlen
• Application Number:
  US08/799,729
• Time in Patent Office: 754 Days
• Field of Search: 422/82.01, 422/82.02, 422/82.03, 422/98, 422/95, 73/31.05, 73/31.06, 338/34
• US Class Current: 422/82.02
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid

Abstract

A semiconductor chemical sensor device (2) comprises a sensitive layer (4) for detecting specific chemicals and a heater for heating the sensitive layer, which is formed by a heater portion (6) of a conductive layer (8) in the semiconductor chemical sensor device (2). The semiconductor chemical sensor device (2) further comprises a thermocouple (12) for detecting the temperature of the sensitive layer (4), the thermocouple comprising a P/N junction (14) formed as part of or adjacent the heater portion (6) of the conductive layer (8) such that a signal developed across the P/N junction (14) is representative of the temperature of the sensitive layer (4).

Claims

1. A semiconductor chemical sensor device having a sensitive layer for detecting chemicals and a heater for heating the sensitive layer, the heater being formed by a heater portion of a polysilicon conductive layer in the semiconductor chemical sensor device, the semiconductor chemical sensor device further comprising a first thermocouple for detecting the temperature of the sensitive layer, the first thermocouple comprising a P/N junction such that a signal developed across the P/N junction is representative of the temperature of the sensitive layer, the P/N junction formed as one of

a part of the heater portion of the polysilicon conductive layer or

a part of the polysilicon conductive layer adjacent the heater portion of the polysilicon conductive layer.

2. A semiconductor chemical sensor device according to claim 1 wherein the polysilicon conductive layer is formed from a polysilicon material having a first type of conductivity and the first thermocouple comprises a conductive region formed in the polysilicon conductive layer and formed from polysilicon having a second type of conductivity, the conductive region having a first contact extending thereto, the P/N junction of the first thermocouple comprising a junction between the conductive region and the polysilicon conductive layer, and wherein a voltage signal developed at the first contact is representative of the temperature of the sensitive layer.

3. A semiconductor chemical sensor device according to claim 2 wherein the conductive region is formed in the heater portion of the polysilicon conductive layer.

4. A semiconductor chemical sensor device according to claim 3 wherein the polysilicon conductive layer is formed from N+ doped polysilicon and the conductive region is formed from P+ doped polysilicon.

5. A semiconductor chemical sensor device according to claim 3 further comprising a second thermocouple for detecting the temperature of the sensitive layer, the second thermocouple comprising a P/N junction formed adjacent the heater portion of the polysilicon conductive layer such that a signal developed across the P/N junction is representative of the temperature of the sensitive layer.

6. A semiconductor chemical sensor device according to claim 5 wherein the second thermocouple comprises:

a conductive region formed in the polysilicon conductive layer adjacent the heater portion and formed from polysilicon having a second type of conductivity, the conductive region having a first contact extending thereto; and

a portion of the polysilicon conductive layer, adjacent the conductive region and adjacent the heater portion of the polysilicon conductive layer, having a second contact extending thereto, the P/N junction of the second thermocouple comprising a junction between the conductive region and the portion of the polysilicon conductive layer, wherein a voltage signal developed across the first and second contacts is representative of the temperature of the sensitive layer.

7. A semiconductor chemical sensor device according to claim 6 wherein the polysilicon conductive layer is formed from N+ doped polysilicon and the conductive regions of the first and second thermocouples are formed from P+ doped polysilicon.

8. A semiconductor chemical sensor device according to claim 1 wherein the polysilicon conductive layer is formed from a polysilicon material having a first type of conductivity and the first thermocouple comprises:

a conductive region formed in the polysilicon conductive layer adjacent the heater portion and formed from polysilicon having a second type of conductivity, the conductive region having a first contact extending thereto; and

a portion of the polysilicon conductive layer, adjacent the conductive region and adjacent the heater portion, having a second contact extending thereto, the P/N junction of the first thermocouple comprising a junction between the conductive region and the portion of the polysilicon conductive layer, wherein a voltage signal developed across the first and second contacts is representative of the temperature of the sensitive layer.

9. A semiconductor chemical sensor device according to claim 8 wherein the polysilicon conductive layer is formed from N+ doped polysilicon and the conductive region is formed from P+ doped polysilicon.

10. A semiconductor chemical sensor device having a sensitive layer for detecting chemicals and a heater for heating the sensitive layer, the heater being formed by a heater portion of a polysilicon conductive layer in the semiconductor chemical sensor device, the semiconductor chemical sensor device further comprising:

a first thermocouple for detecting the temperature of the sensitive layer, the first thermocouple comprising a P/N junction formed as part of or adjacent the heater portion of the polysilicon conductive layer such that a signal developed across the P/N junction is representative of the temperature of the sensitive layer; and

a second thermocouple for detecting the temperature of a region of the semiconductor chemical sensor device remote from the heater, the second thermocouple comprising a P/N junction formed in a conductive layer such that a signal developed across the P/N junction is representative of the temperature of the region of the semiconductor chemical sensor device.