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Dry etching method

  • US 5,880,035 A
  • Filed: 04/25/1997
  • Issued: 03/09/1999
  • Est. Priority Date: 06/29/1992
  • Status: Expired due to Fees
First Claim
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1. A dry etching method of processing a polycide layer, comprising the steps of:

  • forming a polycide layer on an oxide layer, the polycide layer being comprised of a first polysilicon layer and a refractory metal silicide layer in this order;

    forming a patterned resist on said polycide layer;

    providing an undercut in said refractory metal silicide layer which contacts the patterned resist by a first isotopical dry etching; and

    performing an anisotropic dry etching of said polycide layer using said patterned resist as a mask wherein a gas used in said anisotropic dry etching includes Br.

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