Multilayered electrostatic chuck and method of manufacture thereof

• US 5,880,922 A
• Filed: 04/17/1997
• Issued: 03/09/1999
• Est. Priority Date: 03/10/1995
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Husain, Anwar
• Primary Examiner(s): FLEMING, FRITZ M
• Application Number:
  US08/839,315
• Time in Patent Office: 691 Days
• Field of Search: 361/234, 361/233, 361/235, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

A ceramic electrostatic chucking device having electrostatic clamping electrodes suitable for clamping wafers and flat panel displays. The chucking device includes a top insulating layer, the clamping electrode, a second insulating layer, a first metallization layer for distributing power to one of the clamping electrodes, a third insulating layer, a second metallization layer for distributing power to the other clamping electrode, a fourth insulation layer, inner and outer heater electrodes, a fifth insulating layer, a third metallization layer for distributing power to the heater electrodes, and at least one additional insulating layer. The insulating layers include groups of electrically conductive feedthroughs for interconnecting the electrodes and metallization layers.

Claims

1. A multilayered electrostatic chucking device, comprising:

a first insulating layer of an electrically insulating ceramic material;

a second insulating layer of an electrically insulating ceramic material;

an electrostatic clamping electrode between the first and second insulating layers, the clamping electrode including first and second strips of electrically conductive material;

a third insulating layer of electrically insulating ceramic material;

a heater electrode between the second and third insulating layers;

the clamping electrode being electrically connected to a direct current power supply and a radio frequency energy supply, the direct current power supply providing the clamping electrode with energy sufficient to electrostatically clamp a substrate on the first insulating layer and the radio frequency energy supply providing the clamping electrode with energy sufficient to provide a substrate clamped on the first insulating layer with an RF bias during plasma assisted deposition the chucking device including groups of feedthroughs arranged so as to supply a high electrical power density to the first and second strips while minimizing heat-up of the chucking device; and

openings extending axially through the first, second and third insulating layers, the openings being large enough to allow lifting pins to pass through the chucking device.

2. The chucking device of claim 1, wherein the heater electrode includes an inner heater electrode comprising a spirally extending strip of electrically conductive material.

3. The chucking device of claim 2, wherein the heater electrode includes an outer heater electrode surrounding the inner heater electrode, the outer heater electrode comprising a spirally extending strip of conductive material.

4. The chucking device of claim 1, wherein the first strip is electrically connected to a first direct current power supply and the second strip is electrically connected to a second direct current power supply, the first and second direct current power supplies being at opposite polarities.

5. The chucking device of claim 1, further comprising a heat sink base, the third insulating layer being located between the heat sink base and the heater electrode.

6. The chucking device of claim 1, further comprising a fourth insulating layer of electrically insulating ceramic material and a metallization layer on the fourth insulating layer, the metallization layer including a plurality of radially extending legs electrically connected to the clamping electrode.

13. The chucking device of claim 1, further comprising groups of electrically conductive feedthroughs in the third insulating layer, the groups of the feedthroughs in the third insulating layer being electrically connected to the first strip.

14. The chucking device of claim 13, further comprising a fourth insulating layer of electrically insulating ceramic material and a second metallization layer on the fourth insulating layer, the second metallization layer including a plurality of radially extending legs electrically connected to the first strip.

7. A multilayered electrostatic chucking device, comprising:

a first insulating layer of an electrically insulating ceramic material;

a second insulating layer of an electrically insulating ceramic material;

an electrostatic clamping electrode between the first and second insulating layers, the clamping electrode including first and second strips of electrically conductive material;

a third insulating layer of electrically insulating ceramic material; and

a heater electrode between the second and third insulating layers; and

a plurality of groups of electrically conductive feedthroughs in the second insulating layer, a first group of the feedthroughs being electrically connected to the first strip and a second group of the feedthroughs being electrically connected to the second strip, the feedthroughs being arranged so as to supply a high electrical power density to the first and second strips while minimizing heat-up of the chucking device.

8. A multilayered electrostatic chucking device, comprising

a first insulating layer of an electrically insulating ceramic material;

a second insulating layer of electrically insulating ceramic material;

an electrostatic clamping electrode between the first and second insulating layers, the clamping electrode including first and second strips of electrically conductive material;

a first group of electrically conductive feedthroughs extending through the second insulating layer and in electrical contact with the first strip; and

a second group of electrically conductive feedthroughs extending through the second insulating layer and in electrical contact with the second strip, the feedthroughs being arranged so as to supply a high electrical power density to the first and second strips while minimizing heat-up of the chucking device.

9. The chucking device of claim 8, wherein the clamping electrode is electrically connected to a direct current power supply and a radio frequency energy supply, the direct current power supply providing the clamping electrode with energy sufficient to electrostatically clamp a substrate on the first insulating layer and the radio frequency energy supply providing the clamping electrode with energy sufficient to provide a substrate clamped on the first insulating layer with an RF bias during plasma assisted deposition.

10. The chucking device of claim 8, wherein the first strip is electrically connected to a first direct current power supply and the second strip is electrically connected to a second direct current power supply, the first and second direct current power supplies being at opposite polarities.

11. The chucking device of claim 8, further comprising a third insulating layer and a heater electrode between the third insulating layer and the second insulating layer, the heater electrode comprising a spirally extending strip of electrically conductive material.

12. The chucking device of claim 11, wherein the heater electrode comprises an inner heater electrode, the chucking device further comprising an outer heater electrode surrounding the inner heater electrode, the second heater electrode comprising a spirally extending strip of conductive material.

15. The chucking device of claim 8, further comprising a heat sink base, the second insulating layer being located between the heat sink base and the clamping electrode.

16. The chucking device of claim 8, further comprising openings extending axially through the first and second insulating layers, the openings being large enough to allow lifting pins to pass through the chucking device.

17. A method of making a ceramic electrostatic chuck comprising steps of:

providing a first metallization layer on a top side of a first insulating layer, the first insulating layer comprising electrically insulating ceramic material in a green state having first and second groups of electrically conductive feedthroughs extending therethrough, the metallization layer comprising an electrostatic clamping electrode pattern of first and second strips of electrically conductive material;

providing a second metallization layer on a top side of a second insulating layer, the second insulating layer comprising electrically insulating ceramic material in a green state having third groups of electrically conductive feedthroughs extending therethrough, the second metallization layer comprising a power distributing electrode pattern of electrically conductive material;

assembling the second insulating layer on a bottom side of the first insulating layer; and

cofiring the first and second insulating layers and forming a sintered body with the first and third groups of feedthroughs in electrical contact with the first strip and the second group of feedthroughs in electrical contact with the second strip, the feedthroughs being arranged so as to supply a high electrical power density to the first and second strips while minimizing heat-up of the chuck.

18. The method of claim 17, further comprising providing a third metallization layer on a top side of a third insulating layer, the third insulating layer comprising electrically insulating ceramic material in a green state, the third metallization layer comprising a second power distribution electrode pattern of electrically conductive material, and assembling the third insulating layer on a bottom side of the second insulating layer prior to the cofiring step.

19. The method of claim 18, further comprising providing a fourth metallization layer on a top side of a fourth insulating layer, the fourth insulating layer comprising electrically insulating ceramic material in a green state, the fourth metallization layer comprising a heater electrode pattern of electrically conductive material, and assembling the fourth insulating layer on a bottom side of the third insulating layer prior to the cofiring step.

20. The method of claim 19, wherein the heater electrode comprises a spirally extending strip of electrically conductive material.

21. The method of claim 20, wherein the heater electrode comprises an inner heater electrode, the chucking device further comprising an outer heater electrode surrounding the inner heater electrode, the second heater electrode comprising a spirally extending strip of conductive material the first and second heater electrodes being powered by independent power sources.

22. The method of claim 17, further comprising attaching a heat sink base to the sintered body.

23. The method of claim 17, further comprising assembling a top insulating layer on the top of the first insulating layer of electrically insulating material in a green state prior to the cofiring step.

24. The method of claim 17, further comprising assembling a top insulating layer on the top of the first insulating layer of electrically insulating material in a green state subsequent to the cofiring step.

25. A method of making a ceramic electrostatic chuck comprising steps of:

providing a first insulating layer having an electrostatic clamping electrode pattern of first and second strips of electrically conductive material on the top side thereof, the first insulating layer comprising electrically insulating ceramic material in a green state having first and second groups of electrically conductive feedthroughs extending therethrough, the first group of feedthroughs being in electrical contact with the first strip and the second group of feedthroughs being in electrical contact with the second strip;

providing a first metallization layer on a top side of a second insulating layer, the second insulating layer comprising electrically insulating ceramic material in a green state having third groups of electrically conductive feedthroughs extending therethrough, the first metallization layer comprising a power distribution electrode pattern of electrically conductive material;

assembling the second insulating layer on a bottom side of the first insulating layer; and

cofiring the first and second insulating layers and forming a sintered body with the first and third groups of feedthroughs in electrical contact with each other, the feedthroughs being arranged so as to supply a high electrical power density to the first and second strips while minimizing heat-up of the chuck.

26. The method of claim 25, further comprising providing a second metallization layer on a top side of a third insulating layer, the third insulating layer comprising electrically insulating ceramic material in a green state, the third metallization layer comprising a power distribution electrode pattern of electrically conductive material, and assembling the third insulating layer on a bottom side of the second insulating layer prior to the cofiring step.

27. The method of claim 25, further comprising providing a top insulating layer of electrically insulating ceramic material over the clamping electrode.

28. The method of claim 27, further comprising grinding an exposed surface of the top insulating layer to provide a predetermined distance between a top of the clamping electrode and the exposed surface of the top insulating layer.

29. The method of claim 27, wherein the ceramic material of the top insulating layer is in a green state and the step of providing the top insulating layer is performed prior to the cofiring step.

30. The method of claim 25, wherein the step of providing the clamping electrode is performed after the cofiring step.