Method for controlling growth of a silicon crystal

• US 5,882,402 A
• Filed: 09/30/1997
• Issued: 03/16/1999
• Est. Priority Date: 09/30/1997
• Status: Expired due to Term

• Current Assignee: SunEdison, Inc.
• Original Assignee: MEMC Electronic Materials, Inc. (SunEdison, Inc.)
• Inventors: Fuerhoff, Robert H.
• Primary Examiner(s): BRENEMAN, ROBERT B
• Application Number:
  US08/939,802
• Time in Patent Office: 532 Days
• Field of Search: 117/201, 117/14, 117/13, 117/203, 117/202, 117/208, 117/932
• US Class Current: 117/201
• CPC Class Codes: C30B 15/26 using television detectors; using photo or X-ray detectors
• CPC Class Codes: Y10T 117/1004 with means for measuring, testing, or sensing
• CPC Class Codes: Y10T 117/1008 with responsive control means
• CPC Class Codes: Y10T 117/1032 Seed pulling

Abstract

A method and system for determining a diameter of a silicon single crystal being pulled from a silicon melt contained in a heated crucible. The melt has a surface with a meniscus visible as a bright area adjacent the pulled crystal. A camera generates an image of the interior of the crucible including a portion of the bright area adjacent the crystal. Image processing circuitry defines a central window region of the image having an elliptical shape at a position corresponding to an approximate center of the crystal and processes the image as a function of its pixel values to detect edges within the central window region. The image processing circuitry further groups the detected edges to define an object in the image corresponding to the crystal, determines a dimension of the defined object and determines an approximate diameter of the crystal as a function of the determined dimension of the defined object.

Claims

1. A method for use in combination with an apparatus for growing a silicon single crystal, said crystal growing apparatus having a heated crucible containing a silicon melt from which the crystal is pulled, said melt having a surface with a meniscus visible as a bright area adjacent the crystal as the crystal is pulled from the melt, said method for determining a diameter of the crystal, said method comprising the steps of:

generating an image with a camera of the interior of the crucible including a portion of the bright area adjacent the crystal, said image including a plurality of pixels, said pixels each having a value representative of an optical characteristic of the image;

defining a central window region of the image at a position corresponding to an approximate center of the crystal, said central window region having an elliptical shape;

processing the image as a function of the pixel values to detect edges within the central window region;

grouping the detected edges to define an object in the image corresponding to the crystal;

determining a dimension of the defined object; and

determining an approximate diameter of the crystal as a function of the determined dimension of the defined object.

2. The method of claim 1 wherein the step of determining the dimension of the defined object comprises defining a center of the object and a width of the object, said center of the object corresponding to the approximate center of the crystal and said width of the object corresponding to the approximate diameter of the crystal.

3. The method of claim 2 further comprising the step of defining a plurality of window regions of the image at positions located radially with respect to the center of the object and at a distance from the center of approximately half the width of the object and the step of processing the image as a function of the pixel values to detect edges within the radial window regions, said edges detected within the radial window regions corresponding to an edge of the bright area adjacent the crystal.

4. The method of claim 3 further comprising the steps of defining a curve corresponding to the shape of the meniscus based on the edges detected within the radial window regions, determining a dimension of the defined curve, and determining the diameter of the crystal as a function of the determined dimension of the defined curve.

5. The method of claim 4 wherein the defined curve represents a circle that fits the edges detected within the radial window regions.

6. The method of claim 5 further comprising the step of moving the radial window regions to positions located radially with respect to the center of the defined circle and at a distance from the center of approximately half the determined diameter of the crystal.

7. The method of claim 4 wherein the crystal is generally cylindrical and the bright area is generally ring-shaped and wherein the step of defining the curve includes defining a circle that includes the edge of the ring-shaped bright area defined within at least three of the radial window regions.

8. The method of claim 4 wherein the crystal is generally cylindrical and the bright area is generally ring-shaped and wherein the step of defining the curve includes defining an ellipse that includes the edge of the ring-shaped bright area defined within at least three of the radial window regions.

9. The method of claim 4 wherein the step of grouping the edges detected within the central window region comprises searching the image for the portion of the bright area thereby to detect the bright area if the edge of the portion of the bright area is not defined within the radial window regions.

10. The method of claim 2 further comprising the steps of defining the approximate center of the crystal with respect to a reference (x,y) coordinate system and defining a plurality of window regions of the image at positions located radially with respect to the defined center of the crystal, at least one of the radial window regions being positioned at an angle β

below the y coordinate of the defined center wherein β

is between approximately 15° and

approximately 50°

, and the step of processing the image as a function of the pixel values to detect edges within the radial window regions, said edges detected within the radial window regions corresponding to an edge of the bright area adjacent the crystal.

11. The method of claim 10 further comprising the steps of defining a curve corresponding to the shape of the meniscus based on the edges detected within the radial window regions, determining a dimension of the defined curve, and determining the diameter of the crystal as a function of the determined dimension of the defined curve.

12. The method of claim 10 wherein the crystal growth apparatus includes a reflector positioned within the crucible above the surface of the melt, said reflector having a central opening through which the crystal is pulled and a plurality of notches extending radially outwardly from the central opening, and wherein the step of defining the radial window regions includes positioning one of the radial window regions within each of the notches.

13. The method of claim 1 wherein the central window region has an area greater than the portion of the bright area.

14. The method of claim 1 wherein the step of grouping the edges detected within the central window region includes performing a blob analysis of the image.

15. The method of claim 1 wherein the crystal growth apparatus includes a reflector positioned within the crucible above the surface of the melt, said reflector having a central opening through which the crystal is pulled, and wherein the central window region has an area less than the size of the central opening.

16. The method of claim 1 further comprising the steps of defining a circle having a radius approximately equal to a distance from the approximate center of the crystal to an edge of the bright ring and determining the diameter of the crystal as a function of the radius of the defined circle.

17. The method of claim 16 further comprising the steps of defining the approximate center of the crystal with respect to a reference (x,y) coordinate system and defining a front window region of the image at a position below the y coordinate of the defined center of the crystal and a distance from the defined center of the crystal of approximately half the approximate diameter of the crystal, and the step of processing the image as a function of the pixel values to detect edges within the front window region, said edges detected within the front window region corresponding to the edge of the bright area adjacent the crystal.

18. The method of claim 1 wherein the crystal is pulled from the melt along a longitudinal axis which is substantially perpendicular to the surface of the melt, said camera having an optical axis which is at an acute angle α

with respect to the longitudinal axis, and further comprising the step of compensating for distortion of the image caused by the camera angle by scaling the image as a function of cos α

.

19. The method of claim 1 wherein the crystal growing apparatus provides for relative movement between the crystal and the crucible and further comprising the steps of controlling the rates at which the crucible, the crystal, or both, are rotated in response to the diameter of the crystal thereby to control the crystal growing apparatus.

20. The method of claim 1 wherein the crystal growing apparatus provides for relative movement between the crystal and the crucible and further comprising the step of controlling the rate at which the crystal is pulled from the melt in response to the diameter of the crystal thereby to control the crystal growing apparatus.

21. The method of claim 1 wherein the crystal growing apparatus provides for relative movement between the crystal and the crucible and further comprising the step of controlling the temperature of the melt in response to the diameter of the crystal thereby to control the crystal growing apparatus.