Faceplate thermal choke in a CVD plasma reactor

• US 5,882,411 A
• Filed: 10/21/1996
• Issued: 03/16/1999
• Est. Priority Date: 10/21/1996
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Zhao, Jun, Schreiber, Alex
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US08/735,386
• Time in Patent Office: 876 Days
• Field of Search: 118/715
• US Class Current: 118/715
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A reactor for plasma-enhanced chemical vapor deposition having a showerhead electrode facing the wafer being CVD deposited, the showerhead having a large number of jetting holes for jetting processing gas towards the wafer. Two deep grooves are formed around the area of the showerhead containing the jetting holes. The grooves are formed from opposite sides of the showerhead and are radially offset from each other, thereby forming a thin wall between the grooves in the body of the showerhead. The thin wall acts as a thermal choke, thus reducing the heat flow to the support of the showerhead and also rendering the temperature distribution more uniform across the face of the showerhead. The thin wall further acts as a mechanical bellows to accommodate differential thermal expansion between the showerhead and its support.

Claims

1. A gas faceplate, comprising:

a generally circular plate;

a plurality of holes passing substantially perpendicularly through said plate in a central circular portion of said plate; and

first and second circular grooves formed on opposite sides of said plate surrounding said central circular portion, radially offset from each other, and each penetrating more than half way through said plate so as to form a wall in said plate between said grooves.

2. The faceplate of claim 1, further comprising an annular flange and a wall connecting said flange to a first side of said plate, and wherein said first groove is formed in said first side of said plate and is radially inward of said second groove.

3. The faceplate of claim 1, wherein widths of said grooves and of said wall are in a range of 1 to 4 mm.

4. A substrate processing reactor, comprising:

a vacuum chamber;

a pedestal holding a substrate within said chamber;

a gas faceplate disposed on side of said chamber and having a plurality of jet holes formed therethrough for directing a processing gas toward pedestal; and

a gas distribution system disposed on a side faceplate away from said pedestal to supply said processing gas to a back side of said gas faceplate;

wherein said gas faceplate includes at least two grooves formed on opposite sides thereof, surrounding said jet holes, offset from each other within a plane of said faceplate, and extending sufficient respective distances through said plate so as to form a wall between said grooves extending along depths of said grooves.

5. The reactor of claim 4, wherein a first one of said grooves is formed in said back side of said faceplate and is disposed between said second groove and said jetting holes.

6. The reactor of claim 4:

wherein said vacuum chamber includes a chamber body and a lid releasably sealable to said body; and

wherein said faceplate is attached to said lid.

7. The reactor of claim 6, wherein said faceplate includes a flange attachable to said lid and a wall extending from said flange away from said lid toward a portion of said faceplate including said grooves and said jetting holes.

8. The reactor of claim 7, wherein a first one of said grooves is formed in said back side of said faceplate and is disposed between said second groove and said jetting holes.

9. The reactor of claim 4, further comprising an RF power source connectable between said faceplate and said pedestal so as to form a plasma in a processing space between said pedestal and an area of said faceplate including said jetting holes.

10. The reactor of claim 4, wherein said reactor is configured for plasma-enhanced chemical vapor deposition.

11. The reactor of claim 4, wherein widths of said grooves and of said wall are in a range of 1 to 4 mm.