Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding

• US 5,882,532 A
• Filed: 05/31/1996
• Issued: 03/16/1999
• Est. Priority Date: 05/31/1996
• Status: Expired due to Fees

• Current Assignee: Agilent Technologies, Inc.
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Field, Leslie A., Merchant, Paul P.
• Primary Examiner(s): Chang, Ceila
• Application Number:
  US08/656,624
• Time in Patent Office: 1,019 Days
• Field of Search: 438/50, 438/52, 438/593, 216/2, 360/97.01, 360/99.06, 360/99.08, 73/504.09
• US Class Current: 216/2
• CPC Class Codes: B81C 99/008 separating the processed structure from a mother substrate

Abstract

A thin micromechanical device is fabricated in a way that is mechanically compatible with wafer handling for conventional-thickness wafers. A removable bonding layer bonds a fabrication wafer to a substantially conventional-thickness handle wafer to form a bonded wafer pair. The micromechanical device is formed in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers. The micromechanical device is formed to include part of the fabrication wafer. Finally, the bonding layer underlying the micromechanical device is removed to release the micromechanical device from the handle wafer.

Claims

1. A method for fabricating a thin micromechanical device in a way that is mechanically compatible with wafer handling for conventional-thickness wafers, the method comprising steps of:

providing a fabrication wafer;

providing a substantially conventional-thickness handle wafer;

bonding the fabrication wafer to the handle wafer by a removable bonding layer to form a bonded wafer pair;

forming the micromechanical device in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers, the micromechanical device being formed to include part of the fabrication wafer;

etching through the fabrication wafer to form a trench surrounding the micromechanical device, the trench separating the micromechanical device from the fabrication wafer and being interrupted by at least one tether connecting the micromechanical device to the fabrication wafer, the fabrication wafer being etched through from a face thereof remote from the handle wafer; and

removing the bonding layer underlying the micromechanical device to release the micromechanical device from the handle wafer.

2. The method of claim 1, in which:

in the step of providing a fabrication wafer, a fabrication wafer of conventional thickness is provided; and

the step of forming the micromechanical device in the fabrication wafer includes a step of reducing the thickness of the fabrication wafer to the thickness required for fabricating the micromechanical device.

3. The method of claim 2, in which, in the step of reducing the thickness of the fabrication wafer, the thickness of the fabrication wafer is reduced to a thickness in a range from about 10 μ

m to about 200 μ

m.

4. The method of claim 1, in which, in the step of bonding the fabrication wafer to the handle wafer, the removable bonding layer is a layer of a material chosen from a group consisting of phosphosilicate glass, arsenic glass, boron glass, boro-phosphosilicate glass, low-temperature oxide and thermal oxide.

5. The method of claim 1, in which, in the step of bonding the fabrication wafer to the handle wafer, the removable bonding layer includes phosphosilicate glass.

6. The method of claim 1, in which

the step of removing the bonding layer underlying the micromechanical device includes a step of applying an etchant to the bonding layer via the trench.

7. The method of claim 1, in which, in the step of etching through the fabrication wafer, the fabrication wafer is etched through anisotropically.

8. The method of claim 6, in which, in the step of applying an etchant to the bonding layer, an HF-based etchant is applied.

9. The method of claim 1, in which the step of removing the bonding layer underlying the micromechanical device releases the micromechanical device from the handle wafer but leaves the micromechanical device connected to the fabrication wafer by the at least one tether.

10. The method of claim 9, in which the step of removing the bonding layer underlying the micromechanical device additionally releases the fabrication wafer from the handle wafer.

11. The method of claim 9, additionally comprising a step of breaking the at least one tether to release the micromechanical device from the fabrication wafer.

12. The method of claim 11, additionally comprising a step of applying further processing to the micromechanical device after the step of removing the bonding layer and before the step of breaking the at least one tether.

13. The method of claim 1, in which:

the micromechanical device has a maximum etch distance;

the step of etching through the fabrication wafer additionally defines a tether anchor in the fabrication wafer, the tether anchor being connected to the micromechanical device by the at least one tether, the tether anchor being dimensioned to have an etch distance greater than the maximum etch distance of the micromechanical device; and

the step of removing the bonding layer underlying the micromechanical device is performed to remove the bonding layer underlying the micromechanical device but leaves part of the bonding layer underlying the tether anchor.

14. The method of claim 13, additionally comprising a step of breaking the at least one tether to release the micromechanical device from the bonded wafer pair.

15. A method for fabricating a thin micromechanical device in a way that is mechanically compatible with wafer handling for conventional-thickness wafers, the method comprising steps of:

providing a fabrication wafer;

providing a substantially conventional-thickness handle wafer;

bonding the fabrication wafer to the handle wafer by a removable bonding layer to form a bonded wafer pair;

forming the micromechanical device in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers, the micromechanical device including part of the fabrication wafer, the step of forming the micromechanical device in the fabrication wafer including a step of;

etching through the fabrication wafer to form a trench surrounding the micromechanical device, the trench separating the micromechanical device from the fabrication wafer, and being interrupted by at least one tether connecting the micromechanical device to the fabrication wafer, the fabrication wafer being etched through from a face thereof remote from the handle wafer;

removing the bonding layer underlying the micromechanical device to release the micromechanical device from the handle wafer, the micromechanical device remaining connected to the fabrication wafer by the at least one tether; and

breaking the at least one tether to release the micromechanical device from the fabrication wafer.

16. The method of claim 15, in which:

in the step of providing a fabrication wafer, a fabrication wafer of conventional thickness is provided; and

the step of forming the micromechanical device additionally includes a step of reducing the thickness of the fabrication wafer to the thickness required for fabricating the micromechanical device.

17. The method of claim 16, in which, in the step of bonding the fabrication wafer to the handle wafer, the removable bonding layer is a layer of a material chosen from a group consisting of phosphosilicate glass, arsenic glass, boron glass, boro-phosphosilicate glass, low-temperature oxide, and thermal oxide.

18. A method for fabricating a thin micromechanical device in a way that is mechanically compatible with wafer handling for conventional-thickness wafers, the method comprising steps of:

providing a fabrication wafer;

providing a substantially conventional-thickness handle wafer;

bonding the fabrication wafer to the handle wafer by a removable bonding layer to form a bonded wafer pair;

forming the micromechanical device in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers, the micromechanical device including part of the fabrication wafer, the step of forming the micromechanical device including a step of;

anisotropically etching through the fabrication wafer to form a trench surrounding the micromechanical device and to define a tether anchor in the fabrication wafer, the trench separating the micromechanical device from the fabrication wafer, the micromechanical device having a maximum etch distance, the trench being interrupted by at least one tether connecting the micromechanical device to the tether anchor, the tether anchor being dimensioned to have an etch distance greater than the maximum etch distance of the micromechanical device, the fabrication wafer being anisotropically etched through from a face thereof remote from the handle wafer;

removing the bonding layer underlying the micromechanical device to release the micromechanical device from the handle wafer, the micromechanical device remaining connected to the bonded wafer pair by the at least one tether, the tether anchor, and part of the bonding layer underlying the tether anchor; and

breaking the at least one tether to release the micromechanical device from the bonded wafer pair.

19. The method of claim 18, in which, in the step of bonding the fabrication wafer to the handle wafer, the removable bonding layer is a layer of a material chosen from a group consisting of phosphosilicate glass, arsenic glass, boron glass, boro-phosphosilicate glass, low-temperature oxide and thermal oxide.