Method for making InP-based lasers with reduced blue shifts

• US 5,882,951 A
• Filed: 06/18/1997
• Issued: 03/16/1999
• Est. Priority Date: 06/03/1996
• Status: Expired due to Term

• Current Assignee: Telcordia Technologies Incorporated (Telefonaktiebolaget LM Ericsson)
• Original Assignee: Bell Communications Research, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Bhat, Rajaram
• Primary Examiner(s): Brown, Peter Toby
• Assistant Examiner(s): Pham, Long
• Application Number:
  US08/878,018
• Time in Patent Office: 636 Days
• Field of Search: 438/39, 438/40, 438/41, 438/42, 438/43, 438/44, 438/46, 438/47, 438/249, 438/289, 438/334, 438/408, 148/DIG. 50
• US Class Current: 438/40
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/3409 special GRINSCH structures
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: Y10S 148/05 Etch and refill

Abstract

An InP-based opto-electronic integrated circuit including an active layer having one or more quantum wells (36, 38). According to the invention, a barrier layer (34) of AlGaInAs is formed, preferably between the quantum wells and the substrate (30) to prevent the migration of species from the substrate and lower InP layers that tend to shift the emission wavelengths of the quantum wells to shorter wavelengths, i.e., a blue shift. The barrier layer can be patterned so that some areas of the quantum wells exhibit blue shifting to a shorter wavelength while other areas retain their longer wavelength during annealing.

Claims

1. A method of fabricating a quantum-well device, comprising the steps of:

a first step of epitaxially forming on a substrate comprising In and P a diffusion barrier layer comprising an Al-containing compound semiconductor; and

a second step of epitaxially forming on said diffusion barrier layer at least one quantum well layer surrounded by electron and hole barriers, each comprising In-P based compositions.

2. The method of claim 1, wherein said first forming step includes laterally patterning said diffusion barrier layer.

3. The method of claim 1, wherein said at least one quantum well layer and said electron and hole barriers comprise respective compositions selected from the group of pairs consisting of InGaAsP/InGaAs, InGaAsP/InGaAsP, InP/InGaAs, and InP/InGaAsP.

4. A method of forming a quantum-well device with regions of differing characteristic energy, comprising the steps of:

forming on a substrate comprising indium and phosphorous an InP-based quantum-well structure;

forming on said quantum well structure a patterned diffusion barrier layer by removing diffusion barrier layers in localized regions; and

thermally treating said quantum-well structure at a temperature greater than 600 C., whereby the quantum-well band gap energy is patterned laterally as determined by the local presence or absence of the diffusion barrier layer.

5. The method of claim 4, wherein said diffusion barrier layer comprises Al and In.

6. The method of claim 5, wherein said barrier layer additionally comprises Ga.