Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process

• US 5,883,391 A
• Filed: 06/16/1997
• Issued: 03/16/1999
• Est. Priority Date: 06/14/1996
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Marin, Jose Antonio, Moffatt, Stephen, England, Jonathan Gerald, Adibi, Babak
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US08/876,434
• Time in Patent Office: 638 Days
• Field of Search: 250/492.21, 250/492.2, 250/251, 250/397
• US Class Current: 250/492.21
• CPC Class Codes: H01J 2237/0225 Detecting or monitoring foreign particles
• CPC Class Codes: H01J 2237/304 Controlling tubes
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412

Abstract

High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.

Claims

1. A method of monitoring in an ion implantation process high energy neutral contamination of an ion beam caused by beam ions neutralised as they are temporarily accelerated at a field electrode before being decelerated again to the desired implant energy, comprising the step of monitoring the current drain on the field electrode to indicate the flow rate of said neutralised ions to the target.

2. A method as claimed in claim 1 and including the step of precalibrating said field electrode current drain as a measure of said neutralised ion flow.

3. A method as claimed in claim 1 including the steps of comparing said monitored current drain with a threshold value selected to correspond to a maximum tolerable level of said high energy neutral contamination, and providing an alarm signal if said monitored current exceeds said threshold value.

4. A method as claimed in claim 3 including the step of operating a system interlock to halt the implantation process in response to said alarm signal.

5. Ion implantation apparatus comprising a vacuum chamber containing:

a holder for a target substrate to be implanted,

a source of ions,

a flight tube to carry a beam df ions from said source at a transport energy, said flight tube having an exit aperture and a mass selector to select only ions of a desired mass for delivery in a beam at said transport energy from said exit aperture of the flight tube,

a first voltage potential supply connected between said exit aperture and said substrate holder to decelerate ions in the beam to an implant energy at the holder,

a field electrode located between said exit aperture and said substrate holder,

a second voltage potential supply connected to provide a potential difference between said field electrodes and said exit aperture which temporarily accelerates ions in the beam above said transport energy,

a current meter to provide a signal indicating the current drain on said field electrode,

and means responsive to said current drain signal to provide an indication of the quantity of accelerated neutral particles in the beam leaving the field electrode.

6. Ion implantation apparatus as claimed in claim 5 wherein said means responsive includes calibration means which is precalibrated to be responsive to said current drain signal to provide a signal indicating said neutral particle flow.

7. Ion implantation apparatus as claimed in claim 5, wherein said means responsive includes means for comparing said current drain signal with a threshold value selected to correspond to a maximum tolerable level of said quantity of accelerated neutral particles, and means providing an alarm signal if said current drain signal exceeds said threshold value.

8. Ion implantation apparatus as claimed in claim 7 including a system interlock operable to halt the implantation process in response to said alarm signal.

9. Ion implantation apparatus as claimed in claim 8, and including a deceleration electrode adjacent to and downstream of said field electrode, said deceleration electrode being connected to be at substantially the potential of the target holder.

10. Ion implantation apparatus as claimed in claim 9, wherein said second voltage potential supply is arranged to bias said field electrode negatively relative to said exit aperture by at least 5 kV.

11. Ion implantation apparatus as claimed in claim 9, wherein said second voltage potential supply is arranged to bias said field electrode negatively relative to said deceleration electrode by between 5 kV and 40 kV.

12. Ion implantation apparatus as claimed in claim 11, wherein the field electrode is held at a fixed voltage relative to said deceleration electrode of between -5 kV and -30 kV.

13. Ion implantation apparatus as claimed in claim 12, wherein the field electrode is held at about -25 kV relative to said deceleration electrode.

14. Ion implantation apparatus as claimed in claim 5, wherein said. exit aperture of the flight tube has a screening element at the flight tube potential, and said field electrode is located adjacent to said screening element.