Photodetector based on buried junctions and a corresponding method of manufacture

• US 5,883,421 A
• Filed: 03/13/1997
• Issued: 03/16/1999
• Est. Priority Date: 03/13/1997
• Status: Expired due to Term

• Current Assignee: LG Semicon Co Ltd (SK Hynix Inc.), University Pierre et Marie Curie
• Original Assignee: University Pierre et Marie Curie
• Inventors: Sou, Gerard, Sejil, Mohamed, Ben Chouikha, Mohamed, Lu, Guo Neng
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US08/816,328
• Time in Patent Office: 733 Days
• Field of Search: 257/440, 257/461, 257/464, 257/435
• US Class Current: 257/461
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosensitive portion of the surface of the photodetector. A reverse bias is applied to the junctions, and the values of at least two internal currents passing through such junctions is detected. The internal currents are generated by received light, with each of the junctions corresponding to a particular wavelength of the received light.

Claims

1. A photodetector based on buried junctions comprising:

a semiconductor structure (10,

     110) having a surface (30,

     130), and including at least two successive p-n junctions (11, 12, 111-113) buried at increasing depths (P1, P2, P'"'"'1-P'"'"'3), assembled in pairs in opposition and defining at least three layers (21-23, 121-124), one of said layers (21,

     121) being adjacent to a photosensitive part (34,

     131) of the surface (30,

     130), each of said layers (21-23, 121-124) emerging onto a respective part (31-33, 131-134) of the surface (30,

     130),

an external circuit (40-140) connected to said parts (31-33, 131-134) of the surface (30,

     130), said external circuit passing external currents (I₁, I₁.2, I'"'"'₁, I'"'"'₁.2, I'"'"'₂.3) between the layers (21-23, 121-124),

means (44, 45, 145-147) for applying reverse bias to the junctions (11, 12, 111-113) comprising voltage generators (44, 45, 145-147) arranged in said external circuit (40,

     140), and

means (50,

     150) for detecting intensities of at least two internal currents (I₁, I₂, I'"'"'₁ -I'"'"'₃) passing respectively through said junctions (11, 12, 111-113), said means (50,

     150) for detecting being connected to said external circuit (40,

     140), said internal currents (I₁, I₂, I'"'"'₁ -I'"'"'₃) being generated by the reception of light (5) on the photosensitive part (34,

     131), each of the junctions (11, 12, 111-113) being associated respectively with one peak wavelength (l₁, l₂, l'"'"'₁ -l'"'"'₃) of the light (5), the intensity of the internal current (I₁, I₂, I'"'"'₁ -I'"'"'₃) passing through said junction (11, 12, 111-113) having a peak centered on said peak wavelength for a constant luminous power, the external currents (I₁, I₁.2, I'"'"'₁.2, I'"'"'₂.3)comprising combinations of the internal currents (I₁, I₂, I'"'"'₁ -I'"'"'₃).

2. A photodetector according to claim 1, in which the biasing means (44, 45, 145-147) and the detection means (50, 150) are incorporated in the chip.

3. A photodetector according to claim 1, in which the structure (110) includes three p-n junctions (111-113).

4. A photodetector according to claim 3, in which the structure is produced by BiCMOS technology.

5. A photodetector according to claim 3, in which the structure is produced by bipolar technology.

6. A photodetector according to claim 3, in which three peak wavelengths (l'"'"'₁ -l'"'"'₃) associated with the internal currents passing through said three p-n junctions are situated respectively in wavelength ranges associated with the colors blue, green and red.

7. A photodetector according to claim 1, for which the structure (10) includes two p-n junctions (11, 12).

8. A photodetector according to claim 7, in which the structure is produced by CMOS technology.

9. A photodetector according to claim 7, for which the wavelengths (λ

₁, λ

₂) are respectively situated in wavelength ranges associated with the colors blue and red.

10. A photodetector according to claim 9, in which the depths (P1, P2) of the two junctions (11, 12) have values respectively between 0.3 μ

m and 0.5 μ

m and between 1.7 μ

m and 3.5 μ

m.

11. A photodetector according to claim 7, also including spectral measurement means, the light (5) having an intensity centered on a centering wavelength, the spectral measurement means calculating a value of the ratio (r) of the intensities of the two internal currents (I₁, I₂) and extracting said centering wavelength by means of a reference curve (86) giving the spectral evolution of said ratio (r).

12. An optical sensor including a plurality of photodetectors (1, 101) according to claim 1, said photodetectors (1, 101) being juxtaposed.

13. A color imaging system including at least one photodetector according to claim 1.

14. An artificial vision system including at least one photodetector according to claim 1.

15. A colors'"'"' measurement system including at least one photodetector according to claim 1.

16. A spectral measurement system including at least one photodetector according to claim 1.

17. A method of spectral measurement comprising the steps of:

sending light (5) having an intensity centered on a centering wavelength onto a photosensitive part (34) of a surface (30) of a semi-conductor structure (10), said structure (10) including two successive p-n junctions (11,

     12) buried at increasing depths (P1, P2), assembled in pairs, in opposition and defining three layers (21-23), one of said layers (21) being adjacent to the photosensitive part (34) and each of the junctions (11,

     12) having a reverse bias, each of said layers (21-23) emerging onto a respective part (31-33, 131-134) of the surface (30), an external circuit (40-140) connected to said parts (31-33, 131-134) of the surface (30,

     130) said external circuit passing external currents (I₁, I₁.2, I'"'"'₁, I'"'"'₁.2, I'"'"'₂.3) between the layers (21-23, 121-124), said reverse bias being supplied by voltage generators (44, 45, 145-147) arranged in said external circuit (40,

     140),

measuring internal currents (I₁, I₂) respectively passing through said junctions (11,

     12) and being generated by the sending of the light (5) using measuring means connected to said external circuit, each of the internal currents (I₁, I₂) having, for constant luminous power, an intensity peak centered on a wavelength (l₁, l₂) of the light (5), called the peak wavelength,

calculating a value of the ratio (r) of the intensities of the two internal currents (I₁, I₂), and

extracting said centering wavelength from a reference curve (86) giving the spectral evolution of said ratio (r).

18. A method of spectral measurement according to claim 17, further comprising the steps of:

carrying the centering wavelength obtained onto a supplementary reference curve giving the spectral evolution of the intensity of one of the two internal currents (I₁, I₂) for a reference luminous flux (j₀),

extracting a reference intensity of said current from the supplementary reference curve, and

calculating the luminous flux (j) of said light (5) by multiplying the reference luminous flux (j₀), by the ratio of the reference intensity of said current to the measured intensity of said current.