Ultra-wideband impedance sensor

• US 5,883,591 A
• Filed: 02/27/1998
• Issued: 03/16/1999
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: McEwan, Thomas E.
• Primary Examiner(s): Pihulic, Daniel T.
• Application Number:
  US09/031,839
• Time in Patent Office: 382 Days
• Field of Search: 342/22, 342/27, 342/89, 342/118, 342/124
• US Class Current: 342/22
• CPC Class Codes: G01F 23/266 measuring circuits therefor
• CPC Class Codes: G01F 23/284 Electromagnetic waves
• CPC Class Codes: G01S 13/0209 Systems with very large relative bandwidth, i.e. larger than 10 %, e.g. baseband, pulse, carrier-free, ultrawideband
• CPC Class Codes: G01S 13/04 Systems determining presence of a target based on relative movement of target G01S13/56
• CPC Class Codes: G01S 13/18 wherein range gates are used
• CPC Class Codes: G01S 13/88 Radar or analogous systems specially adapted for specific applications electromagnetic prospecting or detecting of objects, e.g. near-field detection, G01V3/00

Abstract

The ultra-wideband impedance sensor (UWBZ sensor, or Z-sensor) is implemented in differential and single-ended configurations. The differential UWBZ sensor employs a sub-nanosecond impulse to determine the balance of an impedance bridge. The bridge is configured as a differential sample-and-hold circuit that has a reference impedance side and an unknown impedance side. The unknown impedance side includes a short transmission line whose impedance is a function of the near proximity of objects. The single-ended UWBZ sensor eliminates the reference side of the bridge and is formed of a sample and hold circuit having a transmission line whose impedance is a function of the near proximity of objects. The sensing range of the transmission line is bounded by the two-way travel time of the impulse, thereby eliminating spurious Doppler modes from large distant objects that would occur in a microwave CW impedance bridge. Thus, the UWBZ sensor is a range-gated proximity sensor. The Z-sensor senses the near proximity of various materials such as metal, plastic, wood, petroleum products, and living tissue. It is much like a capacitance sensor, yet it is impervious to moisture. One broad application area is the general replacement of magnetic sensors, particularly where nonferrous materials need to be sensed. Another broad application area is sensing full/empty levels in tanks, vats and silos, e.g., a full/empty switch in water or petroleum tanks.

Claims

1. An ultra-wideband impedance (UWBZ) sensor, comprising:

a pulse generator for producing ultra-wideband gating pulses;

an ultra-wideband sampler connected to the pulse generator which samples during the gating pulses;

a transmission line whose impedance is a function of the near proximity of objects, connected to the sampler to produce changes in sampler output caused by changes in impedance of the transmission line caused by the near proximity of objects to the transmission line;

an output device connected to the sampler output to provide an output signal;

wherein the sensing range is determined by half the pulsewidth of the gating pulses.

2. The UWBZ sensor of claim 1 wherein the output device is an amplifier.

3. The UWBZ sensor of claim 1 wherein the sampler is a single ended sampler.

4. The UWBZ sensor of claim 3 wherein the single ended sampler comprises a Schottky diode having its cathode connected to the pulse generator, and a charge holding capacitor connected between the anode of the Schottky diode and the transmission line.

5. The UWBZ sensor of claim 4 wherein the output device is an amplifier.

6. The UWBZ sensor of claim 5 wherein the amplifier is connected to the anode of the Schottky diode and further comprising a baseline control or reset circuit connected between the output and input of the amplifier.

7. The UWBZ sensor of claim 3 wherein the pulse generator comprises a pulse repetion frequency (PRF) generator and a pulse forming network (PFN) connected to the PRF generator.

8. The UWBZ sensor of claim 1 wherein the sampler is a differential sampler.

9. The UWBZ sensor of claim 8 wherein the differential sampler comprises a differential sampling impedance bridge having a reference impedance side and an unknown impedance side, the transmission line being connected to the unknown impedance side, and the output device is a differential amplifier having a first input connected to the reference impedance side and a second input connected to the unknown impedance side.

10. The UWBZ sensor of claim 9 wherein the reference impedance side comprises in series, a first Schottky diode having its cathode connected to the pulse generator, a first charge holding capacitor connected to the anode of the first Schottky diode, and a reference impedance connected between the first charge holding capacitor and ground, and the unknown impedance side comprises in series, a second Schottky diode having its cathode connected to the pulse generator, a second charge holding capacitor connected to the anode of the second Schottky diode, and a sensor impedance connected between the second charge holding capacitor and ground, the transmission line being connected in parallel across the sensor impedance, the first input of the differential amplifier being connected to the anode of the first Schottky diode and the second input of the differential amplifier being connected to the anode of the second Schottky diode.

11. The UWBZ sensor of claim 9 further comprising a common mode control amplifier having inputs connected to the reference impedance side and unknown impedance side and an output connected to the pulse generator to control the amplitude of the gate pulses to force the common mode DC voltage from the bridge to zero.

12. A differential ultra-wideband impedance (UWBZ) sensor, comprising:

a pulse repetition frequency (PRF) generator for producing a sequence of PRF pulses;

a gating pulse generator connected to the PRF generator for producing ultra-wideband gating pulses;

a differential sampling impedance bridge comprising first, second, third and fourth nodes, the first node being connected to the gating pulse generator, a first Schottky diode having its cathode connected to the first node and its anode to the second node, a first charge holding capacitor and a reference impedance connected in series between the second node and the third node, the third node being connected to ground, a second Schottky diode having its cathode connected to the first node and its anode to the fourth node, a second charge holding capacitor and a sensor impedance connected in series between the fourth node and third node;

a transmission line whose impedance is a function of the near proximity of objects, connected in parallel across the sensor impedance;

a differential amplifier having a first input connected to the second node and a second input connected to the fourth node to detect sampling bridge imbalance caused by the near proximity of objects to the transmission line;

wherein the sensing range is determined by half the pulsewidth of the gating pulses.

13. The UWBZ sensor of claim 12 further comprising a common mode control amplifier having inputs connected to the second and fourth nodes and an output connected to the gating pulse generator to control the amplitude of the gate pulses to force the common mode DC voltage from the bridge to zero.

14. The UWBZ sensor of claim 13 wherein the common mode control amplifier comprises an operational amplifier in differential integrator configuration having its positive input connected through summing resistors to the second and fourth nodes, and its negative input to ground.

15. The UWBZ sensor of claim 12 wherein the reference and sensor impedances are inductances.

16. The UWBZ sensor of claim 12 further comprising a comparator having a first input connected to the amplifier and a second input connected to a reference voltage which sets the range to the object.

17. A single-ended ultra-wideband impedance (UWBZ) sensor, comprising:

a pulse repetition frequency (PRF) generator for producing a sequence of PRF pulses;

a pulse forming network (PFN) connected to the PRF generator for producing ultra-wideband gating pulses;

a single ended sampler comprising a Schottky diode having its cathode connected to the PFN, and a charge holding capacitor connected to the anode of the Schottky diode;

a transmission line whose impedance is a function of the near proximity of objects, connected to the charge holding capacitor;

an amplifier having an input connected to the anode of the Schottky diode to detect changes in sampler output caused by the near proximity of objects to the transmission line;

wherein the sensing range is determined by half the pulsewidth of the gating pulses.

18. The UWBZ sensor of claim 17 further comprising a baseline control or reset circuit connected between the output and input of the amplifier.

19. The UWBZ sensor of claim 18 wherein the baseline control or reset circuit comprises a switched high gain integrator referenced to ground.

20. The UWBZ sensor of claim 19 wherein the switched high gain integrator referenced to ground comprises an operational amplifier having its output connected through a capacitor to its positive input, and its negative input connected to ground, and a control switch connected to its positive input.