Method of reducing residue accumulation in CVD chamber using ceramic lining

• US 5,885,356 A
• Filed: 12/22/1995
• Issued: 03/23/1999
• Est. Priority Date: 11/30/1994
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Cho, Tom, Zhao, Jun, Tabata, Atsushi, Qiao, Jianmin, Guo, Xin Sheng, Schreiber, Alex
• Primary Examiner(s): Tsang, Cecilia J.
• Assistant Examiner(s): Mohamed, Abdel A.
• Application Number:
  US08/577,862
• Time in Patent Office: 1,187 Days
• Field of Search: 118/723 ER, 118/723 ME, 118/723 MW, 118/715, 118/719, 118/720, 118/725, 118/728, 156/345, 156/625.1, 156/643.1, 156/646.1
• US Class Current: 118/723.0ER
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON® (polytetrafluoroethylene) screws.

Claims

1. A processing apparatus, comprising:

a processing chamber including a body with an upper surface, a lower surface and side surfaces extending from said lower surface, terminating proximate to said upper surface, spaced-apart therefrom defining an annular slot;

a pedestal disposed in said processing chamber between said upper and lower surfaces, with said body further defining an exhaust outlet having an interior surface in fluid communication with said annular slot, with said annular slot positioned between said side surfaces and said exhaust outlet; and

a ceramic body covering a portion of said interior surface.

2. The apparatus of claim 1 wherein said processing chamber is a chemical vapor deposition (CVD) chamber.

3. The apparatus of claim 1 further comprising:

a gas distribution manifold disposed opposite to said pedestal; and

a ceramic isolator ring surrounding said gas distribution manifold and extending below said gas distribution manifold.

4. The apparatus of claim 1 further comprising a ceramic layer positioned between said pedestal and said side surfaces and having a major surface, a first portion of which is in abutting relation with said side surfaces with a second portion being spaced apart therefrom, said second portion defining a gap.

5. The apparatus of claim 4 wherein said ceramic layer is attached to said processing chamber with an electrical insulating material.

6. The apparatus of claim 5 wherein said electrical insulating material is a plurality of polytetrafluoroethylene screws.

7. The apparatus of claim 1

wherein said pedestal and said upper and side surfaces define a reaction region boundary, a portion of which, disposed proximate to said pedestal, has a greater dielectric constant than the remaining regions of said reaction region boundary.

8. The apparatus of claim 7 wherein said pedestal has a periphery and said portion is disposed about said periphery.

9. The apparatus of claim 7 wherein said portion and said remaining regions include a ceramic layer having a thickness, with the thickness of said ceramic layer of said remaining regions being greater than the thickness of said ceramic layer of said portion.

10. The apparatus of claim 7 wherein said portion includes a layer of a first material having a first dielectric constant associated therewith and said remaining regions include a layer of a second material, differing from said first material, having a second dielectric constant associated therewith.

11. A processing apparatus, comprising:

a processing chamber including a body with an upper surface, a lower surface and side surfaces extending from said lower surface terminating proximate to said upper surface;

a pedestal disposed in said processing chamber between said upper and lower surfaces,

a ceramic layer positioned between said pedestal and said side surfaces and having a major surface a first portion of which is in abutting relation with said side surfaces with a second portion being spaced apart therefrom, said second portion defining a gap.

12. The processing apparatus of claim 11 wherein said gap is between 1 and 25 millimeters.

13. The processing apparatus of claim 11 wherein said gap is 10 millimeters.

14. The processing chamber of claim 11 wherein said first portion further comprises a plurality of bumps on an portion of ceramic layer adjacent walls of said processing chamber.

15. A processing apparatus, comprising:

a processing chamber including a body with an upper surface, a lower surface and side surfaces extending from said lower surface terminating proximate to said upper surface; and

a pedestal disposed in said processing chamber between said upper and lower surfaces, with said pedestal and said upper and side surfaces defining a reaction region boundary, a portion of which, disposed proximate to said pedestal, has a lower dielectric constant than the remaining regions of said reaction region boundary.

16. The processing apparatus of claim 15 further including a ceramic layer covering a portion of said boundary and a securing member attaching said ceramic layer to said reaction region boundary.

17. A plasma enhanced chemical vapor deposition processing apparatus, comprising:

a processing chamber including a body with an upper surface, a lower surface and side surfaces extending from said lower surface, terminating proximate to said upper surface, spaced-apart therefrom defining an annular slot; and

a pedestal disposed in said processing chamber between said upper and lower surfaces, with said body further defining an exhaust outlet having an interior surface in fluid communication with said annular slot; and

,

a first ceramic liner covering a portion of said side surfaces, said first ceramic liner having a major surface a first portion in abutting relation with said side surfaces and a second portion, spaced apart therefrom, said second portion defining a gap; and

a second ceramic liner covering said interior surface.

18. The apparatus of claim 17 further including a securing member for attaching a ceramic liner to said processing chamber, said securing member being made of an electrically insulating material.

19. A method for operating a processing chamber including a body with an upper surface, a lower surface and side surfaces extending from said lower surface terminating proximate to said upper surface and a pedestal disposed within said processing chamber said method comprising steps of:

positioning said pedestal a predetermined distance from said upper surface, with said pedestal and said upper and side surfaces defining a reaction region boundary;

coupling, within said reaction region boundary, a plasma; and

varying an electrical impedance between said side surfaces and said plasma to be greater than an electrical impedance between said pedestal and said plasma.

20. The method of claim 19 wherein said step of varying an electrical impedance includes covering a periphery of said pedestal and said side surfaces with a dielectric material, with a thickness of the dielectric material covering said side surfaces being greater than the a thickness of the dielectric material covering said periphery.

21. The method of claim 19 wherein said step of varying an electrical impedance includes covering a periphery of said pedestal with a first material having a first dielectric constant associated therewith and said side surfaces with a second dielectric material having a second dielectric constant associated therewith, with said first dielectric constant being greater than said second dielectric constant.

22. The method of claim 19 wherein a securing member further comprises a plurality of polytetrafluoroethylene screws.