Gas injection slit nozzle for a plasma process reactor

• US 5,885,358 A
• Filed: 07/09/1996
• Issued: 03/23/1999
• Est. Priority Date: 07/09/1996
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Driscoll, Timothy D., Maydan, Dan, Papanu, James S., Olgado, Donald, Tepman, Avi, Mak, Steve S. Y., Yin, Gerald Zheyao
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): LUND, JEFFRIE ROBERT
• Application Number:
  US08/682,803
• Time in Patent Office: 987 Days
• Field of Search: 118/715, 118/723 E, 118/723 MW, 118/723 I, 118/723 R, 204/298.07, 427/248.1, 427/255.1, 427/255.2, 427/255.3, 427/569, 156/345
• US Class Current: 118/723.00R
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

Claims

1. A plasma reactor comprising:

a reactor chamber having a sidewall;

a pedestal for holding a wafer to be processed; and

a gas injection system, comprising,

plural gas supplies, each containing at least one process gas,

a gas distribution apparatus disposed in said chamber sidewall, said gas distribution apparatus comprising plural gas distribution nozzles each with an annular slotted aperture facing an interior of the chamber, and

plural gas feed lines wherein ones of the gas distribution nozzles are connected to ones of the gas supplies by ones of the gas feed lines.

2. The reactor of claim 1 wherein the gas distribution nozzles are equally spaced in relation to one another around the perimeter of the chamber.

3. The reactor of claim 1 wherein each of the gas distribution nozzles comprises a cylindrical inner member surrounded by an annular outer member such that an annular channel is formed therebetween which terminates at a first end of the inner member and a first end of the outer member with an annular gap comprising the slotted aperture, said annular channel allowing gas to flow to the slotted aperture and into the reactor chamber.

4. The reactor of claim 3 wherein each of the gas distribution nozzles further comprises a gas feed block having a bore therethrough into which the outer member is disposed.

5. The reactor of claim 4 wherein the outer member comprises,

an external annular cavity which in combination with a sidewall of the gas feed block bore forms a first manifold chamber, and

a plurality of holes which provide a passageway for gas to flow from the first manifold chamber to the annular channel between the outer and inner members.

6. The reactor of claim 5 wherein the outer member holes are spaced equally around the circumference of the outer member.

7. The reactor of claim 5 wherein a number and diameter of the outer member holes is chosen so as to provide a desired flow rate of gas from the slotted aperture of each nozzle.

8. The reactor of claim 5 wherein the annular channel between the outer and inner members comprises a second manifold chamber corresponding to a location where the plurality of holes open into the annular channel.

9. The reactor of claim 8 wherein the second manifold chamber narrows at an end closest to the slotted aperture such that a remaining portion of the annular channel has cross-sectional dimensions approximately the same as the slotted aperture.

10. The reactor of claim 5 wherein:

the gas feed block further comprises a gas feed hole having a first end which opens up to the exterior of the block and a second end which opens up into the first manifold chamber; and

a one of the gas feed lines is connected to the first end of the gas feed hole so as to allow gas to flow through the gas feed hole to the first manifold chamber.

11. The reactor of claim 5 further comprising sealing means for preventing the passage of gases between the exterior of the outer member and the sidewall of the gas feed block bore.

12. The reactor of claim 5 further comprising sealing means for preventing the passage of gases into the nozzle from the exterior of the reactor.

13. The reactor of claim 5 wherein there are four outer member holes, each with a diameter of approximately 20 inches.

14. The reactor of claim 4 wherein the gas feed block of each of the gas distribution nozzles is embedded into the sidewall of the reactor and only a portion of the outer and inner members protrudes through the sidewall to the reactor chamber.

15. The reactor of claim 3 wherein the outer member is disposed within a bore in the chamber sidewall.

16. The reactor of claim 3 wherein a portion of the outer and inner members extends radially away from the sidewall into the chamber towards the pedestal.

17. The reactor of claim 3 wherein the outer and inner members of each of the gas distribution nozzles comprises a material substantially impervious to attack from said at least one process gas and from other gases existing with the reactor chamber.

18. The reactor of claim 17 wherein said substantially impervious material comprises one of:

(a) ceramic materials, (b) fused quartz, (c) polymeric materials.

19. The reactor of claim 1 further comprising sealing means for preventing the passage of gases between the exterior of each of the nozzles and chamber sidewall to the exterior of the reactor.

20. The reactor of claim 1 wherein each of the plural gas supplies is capable of containing a different gas or mixture of gases, and exhibiting a different pressure.

21. The reactor of claim 1 wherein each of the gas distribution nozzles is capable of providing a different rate of gas flow into the chamber.

22. The reactor of claim 1 wherein the slotted aperture of each of the gas distribution nozzles has a diameter generally in the range of about 0.30 inches to about 1.00 inches.

23. The reactor of claim 1 wherein the slotted aperture of each of the gas distribution nozzles has a width generally in the range of about 0.010 inches to about 0.030 inches.

24. The reactor of claim 1 wherein there are four gas distribution nozzles.

25. A plasma reactor comprising:

a reactor chamber having a sidewall;

a pedestal for holding a wafer to be processed;

a gas injection system, comprising,

a gas supply containing at least one process gas,

a gas distribution apparatus disposed in said chamber sidewall, said gas distribution apparatus comprising plural gas distribution nozzles each with an annular slotted aperture facing an interior of the chamber, and

plural gas feed lines wherein each one of the gas distribution nozzles is connected to the gas supply by a one of the gas feed lines.

26. The reactor of claim 25 wherein of the gas distribution nozzles comprises a material substantially impervious to attack from said at least one process gas and from other gases existing with the reactor chamber.

27. The reactor of claim 26 wherein said substantially impervious material comprises one of:

(a) ceramic materials, (b) fused quartz, (c) polymeric materials.

28. The reactor of claim 25 wherein there are four gas distribution nozzles.

29. In a plasma reactor comprising a reactor chamber having a sidewall, a pedestal for holding a wafer to be processes, and a gas injection system comprising plural gas supplies and a gas distribution apparatus having plural distribution nozzles each with an annular slotted aperture facing an interior of the chamber ones of which are connected to ones of the plural gas supplies, a method of employing the gas injection system comprising the step of:

providing a gas flow from each of the gas distribution nozzles having said annular slotted aperture, said gas flow capable of being at a different flow rate for each of the nozzles.

30. In a plasma reactor comprising a reactor chamber having a sidewall, a pedestal for holding a wafer to be processes, and a gas injection system comprising plural gas supplies and a gas distribution apparatus having plural distribution nozzles each with an annular slotted aperture facing an interior of the chamber ones of which are connected to ones of the plural gas supplies, a method of employing the gas injection system comprising the step of:

emitting a gas from each of the gas distribution nozzles having said annular slotted aperture, said gas capable of being one of (I) a different gaseous species, and (ii) a different mixture of gaseous species, for each of the nozzles.