Tantalum adhesion layer and reactive-ion-etch process for providing a thin film metallization area
First Claim
1. A method for preparing at least one thin film metallization area for metallization on a substrate having a seed layer, comprising the steps of:
- depositing a Ta adhesion layer on the surface of said seed layer of said substrate;
conducting a photo resist process on said Ta adhesion layer to define said thin film metallization area;
conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; and
conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area.
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Abstract
A method for providing a thin film metallization area on a substrate is disclosed comprising the steps of: depositing a Ta adhesion layer on the surface of the substrate seed layer, conducting a photo resist process on the Ta adhesion layer to define the thin film metallization area, including a remnant removal process to remove remnant photo resist process material in the thin film metallization area to the Ta adhesion layer, the Ta adhesion layer preventing the remnant removal from reaching the seed layer, conducting a Ta removal reactive-ion-etch process to remove the Ta adhesion layer in the thin film metallization area, so that the seed layer is exposed in the metallization area. A metal material may then be deposited in the metallization area.
45 Citations
16 Claims
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1. A method for preparing at least one thin film metallization area for metallization on a substrate having a seed layer, comprising the steps of:
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depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define said thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; and conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for providing at least one thin film metal structure on a substrate having a seed layer comprising the steps of:
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depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define a thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area; and depositing a metal material in said metallization area. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification