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Field effect transistor

  • US 5,886,373 A
  • Filed: 07/09/1997
  • Issued: 03/23/1999
  • Est. Priority Date: 01/27/1997
  • Status: Expired due to Fees
First Claim
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1. A field effect transistor comprising:

  • a semi-insulating substrate;

    a conductive semiconductor layer disposed on the semi-insulating substrate;

    a source electrode and a drain electrode disposed on the semiconductor layer;

    a recess symmetrically disposed in the semiconductor layer between the source and drain electrodes, the recess including a spike groove extending into the semiconductor layer within the recess, deeper than other parts of the recess, and asymmetrically disposed between the source electrode and the drain electrode; and

    a gate electrode symmetrically disposed in the recess between the source electrode and the drain electrode, on the semiconductor layer, and filling the spike groove, the gate electrode being wider than the spike groove.

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