Wafer support member
First Claim
1. A wafer support member comprising:
- a ceramic base body,a plurality of electrode portions with thickness of 0.02 mm or more and maximum length of 5 cm or less on the surface of the ceramic base body, anda holding surface formed on each electrode portion with an aluminum nitride film with thickness of 0.01 to 0.5 mm.
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Accused Products
Abstract
A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.
246 Citations
17 Claims
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1. A wafer support member comprising:
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a ceramic base body, a plurality of electrode portions with thickness of 0.02 mm or more and maximum length of 5 cm or less on the surface of the ceramic base body, and a holding surface formed on each electrode portion with an aluminum nitride film with thickness of 0.01 to 0.5 mm. - View Dependent Claims (2, 3, 4)
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5. A wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal, the wafer holding device comprising:
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a base body of aluminum nitride sintered body, the base body defining a lower surface and containing resistance heating elements therein, and lead terminals for feeding power to the resistance heating elements in the lower surface of the base body, wherein at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride.
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6. A wafer support member, comprising:
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a ceramic body having an attraction surface, an internal electrode buried in the ceramic body, a base plate, and an adhesive layer bonding the ceramic body and the base plate, the adhesive layer comprising at least one of indium and an indium alloy. - View Dependent Claims (7)
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8. An attraction device, comprising:
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a base body comprising at least one of a metal and a ceramic, the base body having a flat surface for forming an attraction surface, an outer circumference and penetration holes, the penetration holes opening in said flat surface, each of the penetration holes having an inner wall, the outer circumference and the inner wall of each of the penetration holes of the base body defining an angle with the flat surface, the angle being not greater than about 80°
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9. An attraction device, comprising:
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a base body comprising at least one of a metal and a ceramic, the base body having a flat surface for forming an attraction surface and penetration holes opening in said flat surface, each of the penetration holes having an inner wall, the base body having an outer circumference with a boundary that is chamfered to a C-form or R-form with the outer circumference and the flat surface, and an aluminum nitride film covering the flat surface, the outer circumference, and the inner wall of each of the penetration holes. - View Dependent Claims (10)
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11. A wafer support member, comprising:
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a metallic electrode plate having a surface and a thickness of not less than 0.5 mm, a ceramic base body having a thickness of not less than 3 mm, the metallic electrode plate and the base body being bonded, and an attraction surface coated with an aluminum nitride film having a thickness of between 0.01 mm and 0.5 mm formed on the surface of the electrode plate. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A wafer support member comprising:
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a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate, and a source of direct-current high voltage and high frequency voltage, wherein the electrode plate functions as plasma generating electrode, as well as electrostatic attraction electrode, by applying the direct-current high voltage for electrostatic attraction and the high frequency voltage for plasma generation.
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Specification