Plasma reactor and processes using RF inductive coupling and scavenger temperature control
First Claim
1. A plasma etch process comprising:
- a) providing a vacuum chamber for generating a plasma,b) supporting an article to be processed on a support electrode in the chamber,c) supplying a fluorocarbon etch gas to the chamber,d) electromagnetically coupling RF energy from an RF power supply into the chamber for generating a plasma in a plasma region of the chamber for processing said article,e) capacitively coupling RF energy into the chamber via the support electrode;
f) providing a source of silicon or carbon aside from said etch gas and being operatively associated with said plasma; and
g) additionally and independently heating said source to maintain a surface thereof to be reactive.
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Abstract
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
204 Citations
31 Claims
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1. A plasma etch process comprising:
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a) providing a vacuum chamber for generating a plasma, b) supporting an article to be processed on a support electrode in the chamber, c) supplying a fluorocarbon etch gas to the chamber, d) electromagnetically coupling RF energy from an RF power supply into the chamber for generating a plasma in a plasma region of the chamber for processing said article, e) capacitively coupling RF energy into the chamber via the support electrode; f) providing a source of silicon or carbon aside from said etch gas and being operatively associated with said plasma; and g) additionally and independently heating said source to maintain a surface thereof to be reactive. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. An etch process, comprising processing with an etch gas comprising a fluorine-containing gas a substrate having a first surface area comprising a first material comprising oxygen and a second surface area comprising a material not containing oxygen, wherein said etch gas forms over said second surface a polymer containing by weight more than 50% of carbon and 40% or less of fluorine but etches said first material in said first surface area.
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16. A plasma etch process comprising:
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a) providing a vacuum chamber for generating a plasma, b) supporting an article to be processed on a support electrode in the chamber, c) supplying a fluorine-containing etch gas to the chamber, d) coupling RF electromagnetic energy from an RF power supply into the chamber for generating a plasma from said etch gas, e) additionally capacitively coupling RF energy into the chamber via the support electrode, f) providing a solid source of silicon or carbon aside from said support electrode and having a surface operatively associated with said plasma; and g) additionally electrically biasing said solid source to maintain said surface thereof to be reactive. - View Dependent Claims (17, 18)
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19. A plasma etch process comprising:
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a) providing a vacuum chamber for generating a plasma, b) supporting an article to be processed on a support in the chamber, c) supplying a fluorocarbon etch gas to the chamber, d) electromagnetically coupling RF energy from an RF power supply into the chamber for generating a plasma for processing said article, e) providing a source of silicon or carbon aside from said etch gas for scavenging fluorine, and g) regulating a temperature of said source. - View Dependent Claims (20, 21, 22, 23)
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24. A plasma etch process comprising:
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a) providing a vacuum chamber for generating a plasma, b) supporting an article to be processed on a support in the chamber, c) supplying a fluorocarbon etch gas to the chamber, d) inductively coupling RF energy via a coil antenna through a dielectric wall of said chamber into said chamber so as to generate said plasma, and e) additionally and independently heating said dielectric wall adjacent to said coil. - View Dependent Claims (25)
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26. A plasma processing reactor, comprising:
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a vacuum chamber; a source of processing gas to said vacuum chamber; a support for a workpiece to be processed; at least one RF power supply; a coil antenna disposed above said workpiece for inductively coupling an RF signal from said RF power supply into said chamber to generate a plasma from said processing gas; and a solid source of carbon or silicon aside from said workpiece in contact with said plasma for scavenging fluorine from said plasma and a temperature of which is additionally controlled. - View Dependent Claims (27, 28, 29, 30, 31)
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Specification