Surface acoustic wave device

• US 5,888,646 A
• Filed: 02/19/1997
• Issued: 03/30/1999
• Est. Priority Date: 02/19/1996
• Status: Expired due to Term

• Current Assignee: NEC Corporation, Seiko Epson Corporation (Seiko Group)
• Original Assignee: NEC Corporation, Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Kitabayashi, Hiroyuki, Shikata, Shin-Ichi, Fujii, Satoshi, Nakahata, Hideaki, Yamamoto, Yasushi, Takahashi, Yoshihiro, Higaki, Kenjiro, Sakairi, Natsuhiko
• Primary Examiner(s): Turner, Archene
• Application Number:
  US08/808,956
• Time in Patent Office: 769 Days
• Field of Search: 310/313 R, 310/313 A, 428/210, 428/408, 428/701, 428/702, 428/336
• US Class Current: 428/336
• CPC Class Codes: H03H 9/02582 of diamond substrates
• CPC Class Codes: Y10T 428/24926 including ceramic, glass, porcelain or quartz layer
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65≦kh1≦0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03≦kh2≦0.04, where k is given by k=2 π/λ and λ represents an electrode period.

Claims

1. A surface acoustic wave device comprising a base including a diamond layer, an Al electrode arranged on said diamond layer at an electrode period, and a ZnO piezoelectric thin film layer formed on said diamond layer with said Al electrode covered with said ZnO piezoelectric thin film layer, wherein:

said ZnO piezoelectric thin film layer has a thickness h1 within a range defined by 0.65≦

kh1≦

0.75 while said Al electrode has a thickness h2 within a range defined by 0.03≦

kh2≦

0.04, where k is given by k=2π

/λ and

λ

represents the electrode period.

2. A surface acoustic wave device as claimed in claim 1, wherein said base is formed by a selected one of said diamond layer alone and a substrate covered with said diamond layer.

3. A surface acoustic wave device comprising a base including a diamond layer, an Al electrode formed on said diamond layer, and a ZnO piezoelectric thin film layer formed on said diamond layer with said Al electrode covered with said ZnO piezoelectric thin film layer, wherein:

said ZnO piezoelectric thin film layer has a predetermined thickness while said Al electrode has a thickness within a range such that acoustic reflection at said Al electrode is substantially equal to zero.

4. A surface acoustic wave device as claimed in claim 3, wherein said base is formed by a selected one of said diamond layer alone and a substrate covered with said diamond layer.

5. A surface acoustic wave device an claimed in claim 3, wherein said ZnO piezoelectric thin film layer has a thickness h1 defined by kh1=0.70 while said Al electrode has a thickness h2 within a range defined by 0.03≦

kh2≦

0.04, where k is given by k=2 π

/λ

, and λ

represents an electrode period.

6. A surface acoustic wave device which is for use in propagating a surface wave of a surface wavelength and which has a base, an electrode arranged on said base at an electrode period related to the surface wavelength, and a piezoelectric layer coated on said electrode and said piezoelectric layer, wherein:

said piezoelectric layer and said electrode have first and second thicknesses both of which are determined in relation to the wavelength of the surface wave such that acoustic reflection at said electrode is substantially equal to zero; and

with the electrode period kept substantially equal to the wavelength.

7. A surface acoustic wave device as claimed in claim 6, wherein said base is formed by a selected one of a diamond layer and a substrate covered with a diamond layer while said electrode and said piezoelectric layer are attached to said diamond layer.

8. A surface acoustic wave device as claimed in claim 7, wherein said piezoelectric layer is formed by ZnO while said electrode is formed by Al.

9. A surface acoustic wave device as claimed in claim 8, wherein said piezoelectric layer has a thickness h1 within a range defined by 0.65≦

kh1≦

0.75 while said electrode has a thickness h2 within a range defined by 0.03≦

kh2≦

0.04, where k is given by k=2 π

/λ and

λ

represents the wavelength.