Reticle that compensates for radiation-induced lens error in a photolithographic system

• US 5,888,675 A
• Filed: 12/04/1996
• Issued: 03/30/1999
• Est. Priority Date: 12/04/1996
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Dawson, Robert, Michael, Mark W., Wristers, Derick J., Hause, Frederick N., Gardner, Mark I., Fulford, H. Jim Jr., Moore, Bradley T.
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US08/760,031
• Time in Patent Office: 846 Days
• Field of Search: 430/5, 430/30
• US Class Current: 430/5
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70241 Optical aspects of refractive lens systems, i.e. comprising only refractive elements
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Abstract

A reticle provides an image pattern and compensates for a lens error in a photolithographic system. The reticle is structurally modified using image displacement data indicative of the lens error. The reticle can be structurally modified by adjusting the configuration (or layout) of radiation-transmitting regions, for instance by adjusting a chrome pattern on the top surface of a quartz base. Alternatively, the reticle can be structurally modified by adjusting the curvature of the reticle, for instance by providing a chrome pattern on the top surface of a quartz base and grinding away portions of the bottom surface of the quartz base. The image displacement data may also vary as a function of lens heating so that the reticle compensates for lens heating associated with the reticle pattern.

Claims

1. A method of compensating for a lens error of a lens in a photolithographic system, comprising:

obtaining the lens error in terms of image displacement data; and

structurally modifying a reticle using the image displacement data so that the reticle compensates at least for the lens error resulting from localized lens heating associated with a radiation-transmitting pattern of the reticle.

2. The method of claim 1, wherein the image displacement data varies as a function of heating the lens.

3. The method of claim 1, wherein obtaining the image displacement data includes:

projecting a first amount of radiation through a first test pattern and the lens to provide a first lens error associated with a first heating of the lens;

projecting a second amount of radiation through a second test pattern and the lens to provide a second lens error associated with a second heating of the lens; and

using the first and second lens errors to provide the image displacement data.

4. The method of claim 3, further including:

projecting radiation through the first test pattern to form a first image pattern in a first portion of photosensitive material on a wafer;

projecting radiation through the second test pattern to form a second image pattern in a

second portion of the photosensitive material;

developing the photosensitive material to expose selected portions of the wafer; and

etching the wafer using the photosensitive material as an etch mask thereby forming a first transfer pattern in the wafer and a second transfer pattern in the wafer, wherein the first transfer pattern is associated with the first test pattern and the second transfer pattern is associated with the second test pattern.

5. The method of claim 1, wherein the reticle is adapted for patterning an integrated circuit device.

6. The method of claim 1, wherein the image displacement data is a function of position on the lens.

7. The method of claim 1, wherein the image displacement data is a function of x and y coordinates on a surface of the lens through which radiation passes.

8. The method of claim 1, wherein structurally modifying the reticle includes adjusting a configuration of radiation-transmitting regions of the reticle.

9. The method of claim 1, wherein structurally modifying the reticle includes adjusting a curvature of at least a portion of the reticle.

10. The method of claim 1, further including using the reticle to provide an image pattern and compensate for the lens error during fabrication of an integrated circuit device.

11. A method of compensating for a lens error of a lens in a photolithographic system used for fabricating integrated circuit devices, comprising:

obtaining the lens error in terms of image displacement data as a function of x and y coordinates on a surface of the lens;

structurally modifying a reticle using the image displacement data so that the reticle compensates at least for the lens error resulting from localized lens heating associated with a radiation-transmitting pattern of the reticle; and

then

projecting radiation through the reticle and the lens so that the reticle provides an image pattern and compensates for the lens error during fabrication of an integrated circuit device.

12. The method of claim 11, wherein structurally modifying the reticle includes adjusting a configuration of radiation-transmitting regions of the reticle.

13. The method of claim 12, wherein the reticle includes a radiation-blocking pattern on a radiation-transmitting base, and adjusting the configuration of the radiation-transmitting regions includes adjusting a configuration of the radiation-transmitting pattern with respect to the radiation-transmitting base.

14. The method of claim 13, wherein the radiation-blocking pattern includes chrome, and the radiation-transmitting base includes quartz.

15. The method of claim 11, wherein structurally modifying the reticle includes adjusting a curvature of at least a portion of the reticle.

16. The method of claim 15, wherein the reticle includes a radiation-blocking pattern on a radiation-transmitting base, and adjusting the curvature of the reticle includes adjusting a curvature of the radiation-transmitting base.

17. The method of claim 16, wherein the radiation-blocking pattern includes chrome, and the radiation-transmitting base includes quartz.

18. The method of claim 11, wherein the reticle includes first and second opposing major surfaces, the radiation passes from the first major surface to the second major surface, and structurally modifying the reticle includes adjusting a topography of at least one of the major surfaces.

19. The method of claim 18, wherein the first major surface includes a radiation-blocking pattern, and adjusting the topography includes adjusting a configuration of the radiation-blocking pattern.

20. The method of claim 18, wherein the second major surface is provided by a radiation-transmitting base, and adjusting the topography includes adjusting a curvature of the second major surface by grinding off portions of the second major surface.

21. The method of claim 11, wherein the reticle includes a chrome pattern disposed on a quartz base, and the photolithographic system is a step and repeat system.

22. The method of claim 11, further including:

projecting the radiation through the reticle and the lens to form the image pattern in a photosensitive layer over the device;

developing the photosensitive layer to selectively expose the device; and

applying an etch to form a transfer pattern in the device that corresponds to the image pattern.

23. The method of claim 11, wherein the image displacement data includes multiple data items for each of the coordinates, and structurally modifying the reticle includes selecting a subset of the data items as a function of a radiation-transmitting pattern of the reticle.

24. The method of claim 11, wherein the image displacement includes first data items corresponding to a first heating of the lens, and second data items corresponding a second heating of the lens.

25. The method of claim 24, wherein obtaining the image displacement data includes:

forming a first image pattern on a first portion of photoresist on a wafer by projecting the radiation through a first test reticle and the lens, wherein the first test reticle transfers a first amount of radiation to the lens thereby providing the first heating of the lens;

forming a second image pattern on a second portion of the photoresist by projecting radiation through a second test reticle and the lens, wherein the second test reticle transfers a second amount of radiation to the lens thereby providing the second heating of the lens, and the second amount of radiation is substantially greater than the first amount of radiation resulting in the second heating of the lens being substantially greater than the first heating of the lens;

developing the photoresist to selectively expose the wafer;

etching the wafer using the photoresist as an etch mask, thereby forming a first transfer pattern in the wafer corresponding to the first image pattern, and a second transfer pattern in the wafer corresponding to the second image pattern;

stripping the photoresist;

obtaining the first data items by comparing a displacement between the first test pattern and the first transfer pattern; and

obtaining the second data items by comparing a displacement between the second test pattern and the second transfer pattern.

26. In a photolithographic system including a lens with a lens error, a method of compensating for the lens error, comprising:

expressing the lens error in terms of image displacement data;

structurally modifying a reticle using the image displacement data wherein the reticle compensates at least for the lens error resulting from localized lens heating associated with a radiation-transmitting pattern; and

then

projecting radiation through the reticle and the lens so that the reticle forms an image pattern on an image plane and compensates for the lens error.