Semiconductor device and method for manufacturing the same

• US 5,888,857 A
• Filed: 06/10/1996
• Issued: 03/30/1999
• Est. Priority Date: 12/04/1992
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukunaga, Takeshi, Takayama, Toru, Takemura, Yasuhiko, Uochi, Hideki, Zhang, Hongyong
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/661,013
• Time in Patent Office: 1,023 Days
• Field of Search: 437/21, 437/101, 438/162, 438/166, 438/482
• US Class Current: 438/162
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

Claims

1. A method for forming a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film comprising silicon over a substrate;

forming a substance containing a catalytic metal in contact with the non-single crystalline semiconductor film;

crystallizing the non-single crystalline semiconductor film using the catalytic metal; and

reducing a concentration of the metal in the semiconductor film after the crystallization thereof.

2. A method according to claim 1 wherein said non-single crystalline semiconductor film is formed by low pressure chemical vapor deposition.

3. A method according to according to claim 1 wherein said catalytic metal is disposed below said non-single crystalline semiconductor film.

4. A method according to claim 1 wherein said metal is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.

5. A method for producing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film comprising silicon over a substrate;

selectively forming a subsance containing a catalytic metal in contact with the non-single crystalline semiconductor film;

crystallizing the non-single crystalline semiconductor film using the catalytic metal;

removing the metal from the semiconductor film after the crystallization thereof; and

forming an active region of said semiconductor device in the crystallized semiconductor film,

wherein a portion ofthe non-single crystalline semiconductor film is crystallized along a lateral direction parallel with a surface of the substrate, and a concentration of the metal in said active region is not higher than 1 atomic %.

6. A method according to claim 5 wherein said non-single crystalline semiconductor film is formed by low pressure chemical vapor deposition.

7. A method according to claim 5 wherein said metal is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.

8. A method according to claim 5 wherein the step of removing the metal is performed while heating the crystallized semiconductor film.

9. A method for producing a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor film comprising silicon over a substrate;

forming a substance containing a catalytic metal in contact with the non-single crystalline semiconductor film;

crystallizing the non-single crystalline semiconductor film using the catalytic metal; and

removing the catalytic metal from the crystallized semiconductor film after the crystallizing step by heating the crystallized semiconductor film in a chlorine containing atmosphere.

10. A method of manufacturing a semiconductor device including at least first and second thin film transistors, said method comprising the steps of:

forming a non-single crystalline semiconductor film comprising silicon over a substrate, said semiconductor film having at least first and second regions distant from each other;

disposing a catalytic material selectively in contact with said first and second regions of the non-single crystalline semiconductor film;

heating said non-single crystalline semiconductor film and said catalytic material to crystallize said non-single crystalline semiconductor film from said first and second regions whereby at least a first crystallized region is formed adjacent to said first region and a second crystallized region is formed adjacent to said second region and a grain boundary is formed between said first and second crystallized regions; and

patterning the crystallized semiconductor film into at least first and second active regions of said first and second thin film transistors within said first and second crystallized regions, respectively,

wherein said patterning is performed so as to exclude said grain boundary from said first and second active regions.

11. A method according to claim 10 wherein said catalytic material comprises a metal selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.

12. A method according to claim 11 wherein a concentration of said metal in said first and second active regions is not larger than 1 atomic %.

13. A method according to claim 12 wherein said first and second active regions contain hydrogen in a concentration not higher than 5 atm%.

14. A method according to claim 10 wherein said first and second crystallized regions extend from said first and second regions, respectively, at a distance from 20 to 200 μ

m.

15. A method according to claim 10 wherein said heating is carried out at 580°

C. or lower.

16. A method according to claim 10 further comprising a step of heating the crystallized semiconductor film in order to reduce a concentration of the catalytic material in the crystallized semiconductor film.

17. A method according to claim 16 wherein the crystallized semiconductor film is heated in a chlorine containing atmosphere in order to reduce the concentration of the catalytic material in the crystallized semiconductor film.

18. A method of manufacturing a semiconductor device including at least first and second thin film transistors, said method comprising the steps of:

forming a non-single crystalline semiconductor film comprising silicon over a substrate, said semiconductor film having at least first and second regions distant from each other;

disposing a catalytic material selectively in contact with said first and second regions of the non-single crystalline semiconductor film, said catalytic material containing a metal for promoting crystallization of silicon;

heating said non-single crystalline semiconductor film and said catalytic material to crystallize said semiconductor film together with a diffusion of said metal through said semiconductor film from said first and second regions whereby at least a first crystallized region is formed adjacent to said first region and a second crystallized region is formed adjacent to said second region;

reducing a concentration of said metal in the crystallized semiconductor film after the crystallization thereof; and

patterning the crystallized semiconductor film into at least first and second active regions of said first and second thin film transistors within said first and second crystallized regions, respectively.

19. A method according to claim 18 wherein said first and second crystallized regions extend from said first and second regions, respectively, at a distance from 20 to 200 μ

m.

20. A method according to claim 18 wherein a concentration of said metal in said first and second active regions is not larger than 1 atomic %.

21. A method according to claim 20 wherein said first and second active regions contain hydrogen in a concentration not higher than 5 atm%.

22. A method according to claim 18 wherein said heating is carried out at 580°

C. or lower.

23. A method according to claim 18 wherein the step of reducing the concentration is performed by treating the crystallized semiconductor film with an acid.

24. A method according to claim 18 wherein the step of removing the metal is performed by heating the crystallized semiconductor film by heating at a temperature higher than 400°

C.

25. A method according to claim 18 wherein the step of removing the metal is performed by heating the crystallized semiconductor film by heating the crystallized semiconductor film in a chlorine containing atmosphere.

26. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon over a substrate;

disposing a catalyst material in contact with said amorphous semiconductor film, said catalyst material comprising a metal for promoting crystallization of silicon;

heating said amorphous semiconductor film and said catalyst material to crystallize said amorphous semiconductor film; and

heating the crystallized semiconductor film in a chlorine containing atmosphere in order to remove said metal therefrom.

27. A method according to claim 26 wherein a concentration of said metal in said crystallized semiconductor film is not higher than 1 atomic %.

28. A method according to claim 26 wherein said crystallized semiconductor film contains hydrogen at a concentration not larger than 5 atm %.

29. A method of manufacturing a semiconductor device comprising the steps of:

forming a hydrogenated amorphous semiconductor film comprising silicon over a substrate;

disposing a catalyst material in contact with said hydrogenated amorphous semiconductor film, said catalyst material comprising a metal for promoting crystallization of silicon;

heating said hydrogenated amorphous semiconductor film at a first temperature in order to reduce a concentration of hydrogen in said amorphous semiconductor film; and

then

heating said amorphous semiconductor film and said catalyst material at a second temperature higher than said first temperature to crystallize said amorphous semiconductor film.

30. A method according to claim 29 further comprising a step of heating the crystallized semiconductor film in a chlorine containing atmosphere in order to remove said metal therefrom.

31. A method according to claim 29 wherein a concentration of said metal in said crystallized semiconductor film is not higher than 1 atomic %.