Deep trench filling method using silicon film deposition and silicon migration
First Claim
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1. A method of filling one or more trenches formed in a silicon substrate, comprising the steps of:
- forming a thin polycrystalline silicon film in a trench, said thin polycrystalline silicon film being sufficiently thin so as to not close the trench;
forming an amorphous silicon film on said thin polycrystalline silicon film and the surface of the substrate and in the trenches; and
annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level,wherein said deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H2 O and O2.
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Abstract
A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H2 O and O2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.
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Citations
11 Claims
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1. A method of filling one or more trenches formed in a silicon substrate, comprising the steps of:
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forming a thin polycrystalline silicon film in a trench, said thin polycrystalline silicon film being sufficiently thin so as to not close the trench; forming an amorphous silicon film on said thin polycrystalline silicon film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level, wherein said deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H2 O and O2. - View Dependent Claims (2, 3, 4, 5)
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6. A method of filling one or more trenches formed in a silicon substrate, comprising the steps of:
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depositing an amorphous silicon film on the surface of the silicon substrate and in the one or more trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level, wherein said deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H2 O and O2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure. - View Dependent Claims (7, 8)
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9. A method of filling one or more trenches formed in a silicon substrate, comprising the steps of:
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depositing an amorphous silicon film on the surface of the silicon substrate and in the one or more trenches, said amorphous silicon film sealing the one or more trenches, wherein said deposition process performed at a first ambient pressure; and annealing the amorphous silicon film such that the amorphous silicon layer migrates into any openings in the trenches, said annealing step performed at a second ambient pressure greater than said first ambient pressure, said amorphous silicon layer migrating into the openings in the trenches as a result of the pressure differential between the pressure in the openings and the second ambient pressure, wherein said deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H2 O and O2, the annealing temperature is higher than the deposition temperature. - View Dependent Claims (10, 11)
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsTsunashima, Yoshitaka, Shiozawa, Jun-ichi, Okumura, Katsuya
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Primary Examiner(s)Brown, Peter Toby
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Assistant Examiner(s)Thomas, Toniae M.
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Application NumberUS08/628,094Time in Patent Office1,085 DaysField of Search438/243, 438/386, 438/430, 438/770US Class Current438/386CPC Class CodesH01L 21/763 Polycrystalline semiconduct...H01L 21/76877 Filling of holes, grooves o...H01L 29/66181 Conductor-insulator-semicon...
