Plasma processing method

• US 5,888,907 A
• Filed: 04/24/1997
• Issued: 03/30/1999
• Est. Priority Date: 04/26/1996
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Himori, Shinji, Tomoyasu, Masayuki
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/842,426
• Time in Patent Office: 705 Days
• Field of Search: 118/715, 118/723 E, 118/723 R, 156/345, 204/298.07, 204/298.33, 438/714, 216/67
• US Class Current: 438/714
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

Claims

1. A plasma etching processing method of etching a target object, using plasma, comprising the steps of:

placing said target object on a work table arranged in a process chamber;

supplying an inactive gas and a reactive gas into said process chamber from a gas spouting surface facing said work table, while exhausting said process chamber, such that said inactive gas is continuously supplied from a number of inactive gas spouting holes formed on said gas spouting surface, and said reactive gas is supplied from reactive gas spouting holes, which are formed on said gas spouting surface and divided into a plurality of groups, by intermittently opening and closing said groups in a time-sharing manner;

turning said inactive gas and reactive gas into plasma by means of RF discharge in said process chamber; and

etching said target object, using said plasma.

2. The method according to claim 1, wherein said inactive gas spouting holes and said reactive gas spouting holes are alternately arranged in a direction.

3. The method according to claim 1, wherein said groups of said reactive gas spouting holes have an equal number of holes.

4. The method according to claim 1, wherein said groups of said reactive gas spouting holes are selected to supply said reactive gas in a sequential order relative to an arrayed order of said groups.

5. The method according to claim 1, wherein said groups of said reactive gas spouting holes are selected to supply said reactive gas in a non-sequential order relative to an arrayed order of said groups.