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Semiconductor structure having two levels of buried regions

  • US 5,889,315 A
  • Filed: 02/23/1995
  • Issued: 03/30/1999
  • Est. Priority Date: 08/18/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising (a) a monocrystalline semiconductive substrate, (b) a lower monocrystalline semiconductive layer that overlies the substrate and adjoins it along a lower semiconductor interface, and (c) an upper monocrystalline semiconductive layer that overlies the lower semiconductive layer and adjoins it along an upper semiconductor interface, wherein:

  • first and second lower buried regions of opposite conductivity types are situated along the lower semiconductor interface;

    first and second upper buried regions of opposite conductivity types are situated along the upper semiconductor interface;

    the upper semiconductive layer contains a plurality of P-type device regions and a plurality of N-type device regions; and

    one of the device regions of each conductivity type laterally meets one of the device regions of the other conductivity type and vertically extends into the upper semiconductive layer to a depth sufficient to meet one of the upper buried regions.

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