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RF power package with a dual ground

  • US 5,889,319 A
  • Filed: 07/19/1996
  • Issued: 03/30/1999
  • Est. Priority Date: 07/19/1996
  • Status: Expired due to Term
First Claim
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1. An RF power transistor package, comprising:

  • a transistor chip having one or more ground terminals connected to a common ground plane, wherein the transistor chip and common ground plane are each attached to a first surface of a non-conductive substrate;

    a conductive mounting flange configured for attachment to a heat sink, wherein a second surface of the non-conductive substrate is attached to the flange, the substrate having a plurality of conductively plated via holes extending between the respective first and second surfaces and forming a first electrical path from the common ground plane to the flange;

    a conductive lead coupled to the first surface of the substrate and coupled to the common ground plane; and

    a second electrical path connecting the lead to the flange, the second electrical path located external to the non-conductive substrate.

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