Metal oxide film resistor
First Claim
1. A metal oxide film resistor comprising an insulating substrate and a metal oxide resistive film formed on said substrate, wherein said insulating substrate has a surface roughness over 0.3 μ
- m, and said metal oxide resistive film comprises at least a first metal oxide layer having a negative temperature coefficient of resistance and a second metal oxide layer having a positive temperature coefficient of resistance, said first metal oxide consisting essentially of a tin oxide and at least one metal oxide in an amount under 10 mol% selected from the group consisting of ferric oxide, chromium oxide and silicon oxide.
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Accused Products
Abstract
According to the present invention, there is provided a metal oxide film resistor which has an insulating substrate, a metal oxide resistive film having at least a metal oxide film having a positive temperature coefficient of resistance and/or a metal oxide film having a negative temperature coefficient of resistance, and/or a metal oxide insulating film. The metal oxide film resistor is not affected by moisture or alkali ions in the insulating substrate. The resistance of the film itself does not change. The metal oxide film resistor is extremely reliable.
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Citations
9 Claims
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1. A metal oxide film resistor comprising an insulating substrate and a metal oxide resistive film formed on said substrate, wherein said insulating substrate has a surface roughness over 0.3 μ
- m, and said metal oxide resistive film comprises at least a first metal oxide layer having a negative temperature coefficient of resistance and a second metal oxide layer having a positive temperature coefficient of resistance, said first metal oxide consisting essentially of a tin oxide and at least one metal oxide in an amount under 10 mol% selected from the group consisting of ferric oxide, chromium oxide and silicon oxide.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
Specification