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CVD reactor having heated process chamber within isolation chamber

  • US 5,891,251 A
  • Filed: 08/07/1996
  • Issued: 04/06/1999
  • Est. Priority Date: 08/07/1996
  • Status: Expired due to Term
First Claim
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1. A CVD reactor comprising:

  • a pressure chamber for maintaining a reduced pressure environment;

    a reaction chamber contained entirely within said pressure chamber, said reaction chamber comprising a susceptor upon which rests a wafer to be processed therein using one or more process gases, the interior of said reaction chamber being substantially isolated from said pressure chamber such that said process gases present in said reaction chamber do not contact a surface of said pressure chamber; and

    a first plurality of induction coils positioned on an external periphery of said pressure chamber, said induction coils generating an RF field which inductively couples with a portion of said reaction chamber which in turn heats said wafer in said reaction chamber, wherein said first plurality of induction coils are arranged in two or more independently controllable concentric zones.

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